SILICON HYPERABRUPT TUNING DIODES • High capacitance ratios • Linear tuning between 2 and 8 volts • Available over a broad range junction capacitances • Satisfies a large number of broadband applications thru the VHF frequency band KSV1401 - KSV1412 PART NUMBER KSV1401 KSV1402 KSV1403 KSV1404 KSV1405 KSV1406 KSV1407 KSV1408 KSV1409 KSV1410 KSV1411 KSV1412 DIODE CAPACITANCE (CT) pF @ 1V•1 MHz pF @ 2V•1 MHz MIN MAX MIN MAX 440 660 45 69 140 210 96 144 200 300 80 120 54 82 37 57 26 40 17 27 12 18 8 12 Package Style Device Dissipation (PD) Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) Max Reverse Leakage Current (IR) Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance TUNING RATIO (TR) C•1V / C•10V C•2V / C•10V @ 1 MHz @ 1 MHz MIN MIN 14:1 10:1 10:1 10:1 10:1 10:1 10:1 10:1 10:1 9.5:1 8.5:1 7.5:1 TA = 25°C 10 µAdc Vr = 10 Vdc Standard Device Suffix A Suffix B QUALITY FACTOR Q @ 2V • 1 MHz MIN 200 200 200 200 200 200 200 200 200 200 200 200 DO-7 400 mW 175°C 12 Vdc Min 0.1 µAdc -55° to + 150°C -65° to + 200°C ± 20% ± 10% ± 5% To order devices screened to MIL-PRF-19500 JANTX level, Appendix E, Table IV add suffix H. P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX 207-236-9558