2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 4.0A; IB = 0.04A f=16KHZ IF=3A IC=4.0A,IB1=-IB2=0.04A,VCC=100V MIN - MAX 600 400 6 12 25 2.0 UNIT V V A A W V A V s 2.5 5 6.0 MIN -55 - MAX 600 400 6 12 1 2 25 150 150 UNIT V V A A A A W MIN MAX 0.5 3.0 UNIT mA mA LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES PARAMETER Collector cut-off current Switching times(16KHz line deflecton circuit) CONDITIONS VEB=0V,VCE=VCESMmax VEB=0V,VCE=VCESMmax Tj=125 IB=0A,IC=100mA L=25mH IC = 4.0A; IB = 0.04A IC = 4.0A; IB = 0.04A IC = 2A; VCE = 5V IF=3A IC=2A,VCE=10V VCB = 50V IC=4.0A,IB1=-IB2=0.04A,VCC=100V Turn-off storage time Turn-off fall time IC=4.0A,IB1=-IB2=0.04A,V CC=100V VCEOsust Collector-emitter sustaining voltage VCEsat VBEsat hFE VF fT Cc ts tf Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] V 600 2.5 5 2.0 1.5 V V 5.0 V MHz pF s s 50 10 6.0