ASI VFT300

VFT300-28
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-28 is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
PACKAGE STYLE .400 BAL FLG (D)
A
FULL R
B
.080x45°
FEATURES:
(4X).060 R
• PG = 14 dB Typical at 175 MHz
• ηD = 55% Typ. at POUT = 300 Watts
• Omnigold™ Metalization System
E
.1925
D
M
C
F
G
H
N
I
L
MAXIMUM RATINGS
ID
J
K
16 A
V(BR)DSS
65 V
VDGR
65 V
VGS
± 40 V
PDISS
500 W @ TC = 25 °C
TJ
TSTG
-65 °C to +150 °C
θJC
0.35 °C/W
CHARACTERISTICS
SYMBOL
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.210 / 5.33
C
.125 / 3.18
D
.380 / 9.65
.390 / 9.91
E
.580 / 14.73
.620 / 15.75
.435 / 11.05
F
-65 °C to +200 °C
MAXIMUM
DIM
G
1.090 / 27.69
1.105 / 28.07
H
1.335 / 33.91
1.345 / 34.16
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.100 / 2.54
.115 / 2.92
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
.230 / 5.84
L
ORDER CODE: ASI10707
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS
VDS = 28 V
VGS = 0 V
5.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
µA
VGS
VDS = 10 V
ID = 100 mA
5.0
V
VDS
VGS = 10 V
ID = 10 A
1.5
V
GFS
VDS = 10 V
ID = 5 A
Ciss
Coss
Crss
VGS = 28 V
VDS = 0 V
GPS
ηD
VDD = 28 V
f = 175 MHz
IDQ = 2 x 250 mA
65
UNITS
V
1.0
3500
F = 1.0 MHz
POUT = 300 W
12
50
mS
375
188
26
pF
14
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
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