VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A FULL R B .080x45° FEATURES: (4X).060 R • PG = 14 dB Typical at 175 MHz • ηD = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System E .1925 D M C F G H N I L MAXIMUM RATINGS ID J K 16 A V(BR)DSS 65 V VDGR 65 V VGS ± 40 V PDISS 500 W @ TC = 25 °C TJ TSTG -65 °C to +150 °C θJC 0.35 °C/W CHARACTERISTICS SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .210 / 5.33 C .125 / 3.18 D .380 / 9.65 .390 / 9.91 E .580 / 14.73 .620 / 15.75 .435 / 11.05 F -65 °C to +200 °C MAXIMUM DIM G 1.090 / 27.69 1.105 / 28.07 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .100 / 2.54 .115 / 2.92 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 .230 / 5.84 L ORDER CODE: ASI10707 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VDS = 28 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS VDS = 10 V ID = 100 mA 5.0 V VDS VGS = 10 V ID = 10 A 1.5 V GFS VDS = 10 V ID = 5 A Ciss Coss Crss VGS = 28 V VDS = 0 V GPS ηD VDD = 28 V f = 175 MHz IDQ = 2 x 250 mA 65 UNITS V 1.0 3500 F = 1.0 MHz POUT = 300 W 12 50 mS 375 188 26 pF 14 55 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1