Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description MBR20150SC Main Product Characteristics High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2×10A VRRM 150V TJ 150°C VF(max) 0.75V The MBR20150SC is available in standard TO-220F-3, TO-220-3 and TO-220-3 (2) packages. Mechanical Characteristics • • • • Features • • • • • High Surge Capacity 150°C Operating Junction Temperature 20A Total (10A Per Diode Leg) Guard-ring for Stress Protection Pb-free Packages are available • • Case: Epoxy, Molded Epoxy Meets UL 94V-0@ 0.125in. Weight (Approximately): 1.9Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds Applications • • • TO-220F-3 Power Supply − Output Rectification Power Management Instrumentation TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR20150SC Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Pin Configuration T Package (TO-220-3) (Optional) (TO-220-3 (2)) 3 A2 2 K 1 A1 TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR20150SC (Top View) Figure 3. Internal Structure of MBR20150SC Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Ordering Information MBR20150SC E1: Lead Free G1: Green Circuit Type Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Part Number Package TO-220-3 (2) TO-220F-3 Blank: Tube Marking ID Lead Free Green Lead Free Green MBR20150SCTE1 MBR20150SCTF -E1 MBR20150SCTG1 MBR20150SCTF -G1 MBR20150SCTE1 MBR20150SCTF -E1 MBR20150SCTG1 MBR20150SCTF -G1 Packin g Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=134°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=133°C Non repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) Operating Junction Temperature Range (Note 2) Symbol VRRM VRWM VR Value Unit 150 V IF(AV) 10 A IFRM 20 A IFSM 150 A TJ 150 °C Storage Temperature Range TSTG -55 to 150 °C Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B) dv/dt 10000 >400 >8000 V/µs V V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Recommended Operating Conditions Parameter Symbol θJC Condition Value Junction to Case Maximum Thermal Resistance Junction Ambient θJA to Unit TO-220-3/ TO-220-3 (2) 2.0 TO-220F-3 3.0 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 °C/W Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Maximum Instantaneous Reverse Current (Note 3) Symbol VF IR Conditions Value IF=10A, TC=25°C 0.9 IF=10A, TC=125°C 0.75 Rated DC TC=125°C Voltage, Rated DC TC=25°C Voltage, Unit V 20 mA 0.05 Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Typical Performance Characteristics IF,Instantaneous Forward Current (A) 100 10 1 0.1 0 25 C 0 125 C 0 150 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF,Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage Per Diode 10000 IR, Reverse Current (µA) 1000 100 10 1 0 25 C 0 125 C 0 150 C 0.1 0.01 0 20 40 60 80 100 120 140 160 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Per Diode Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Typical Performance Characteristics (Continued) 20 Average Forward Current AMPS 18 16 14 12 10 8 6 4 2 0 115 120 125 130 135 140 145 150 155 160 0 Case Temperature ( C) Figure6. Average Forward Current vs. Case Temperature (Square, Per Diode) Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 9.660(0.380) 10.660(0.420) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 0.200(0.008) 14.230(0.560) 16.510(0.650) 1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) Mar. 2011 2.540(0.100) Rev. 1. 3 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) 1.620(0.064) 1.820(0.072) 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 3.000(0.118) REF 3° 1.170(0.046) 1.390(0.055) 0.700(0.028) 0.900(0.035) 2.540(0.100) REF Mar. 2011 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) Unit: mm(inch) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) Mar. 2011 2.540(0.100) Rev. 1. 3 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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