Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description MBR20H100C Main Product Characteristics High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF (AV) 2×10A VRRM 100V TJ 175oC VF (max) 0.64V MBR20H100C is available in TO-220F-3, TO-220-3 and TO-220-3 (2) packages. Mechanical Characteristics Features · · · · · · · · · Low Forward Voltage: 0.64V @ 125oC High Surge Capacity 175oC Operating Junction Temperature 20A Total (10A Each Diode Leg) Guard-ring for Stress Protection Pb-free Package · · · Applications · · · Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 2Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds Power Supply Output Rectification Power Management Instrumentation TO-220F-3 TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR20H100C Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Pin Configuration T Package (TO-220-3 (2)) (TO-220-3) (Optional) 3 A2 3 A2 2 K 2 K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2 K 1 A1 Figure 2. Pin Configuration of MBR20H100C (Top View) A1 K A2 Figure 3. Internal Structure of MBR20H100C Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Ordering Information MBR20H100C Package Circuit Type E1: Lead Free G1: Green Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Lead Free TO-220-3 (2) MBR20H100CT-E1 TO-220F-3 - Marking ID Green Lead Free MBR20H100CT-G1 MBR20H100CT-E1 Green MBR20H100CT-G1 MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC=162oC IF (AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=160oC IFRM 20 A Non Repetitive Peak Surge Current (Surge Applied at Rated load Conditions Half Wave, Single Phase, 60Hz) IFSM 250 A TJ 175 oC Storage Temperature Range TSTG -65 to 175 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ<1/θJA. Thermal Characteristics Parameter Symbol θJC Condition Junction to Case Maximum Thermal Resistance θJA Junction to Ambient Mar. 2011 Rev. 1. 4 Value TO-220-3/ TO-220-3 (2) 2.0 TO-220F-3 2.5 TO-220-3/ TO-220-3 (2) 60 Unit o C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Electrical Characteristics (Each Diode Leg) Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Maximum Instantaneous Reverse Current (Note 3) Symbol VF IR Condition Value IF=10A, TC=25oC 0.77 IF=10A, TC=125oC 0.64 IF=20A, TC=25oC 0.88 IF=20A, TC=125oC 0.73 Rated DC Voltage, TC=125oC 6.0 Rated DC Voltage, TC=25oC 0.0045 Unit V mA Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 o 0.1 0.01 0.0 25 C o 125 C o 150 C o 175 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 0.01 IR, Reverse Current (A) 1E-3 1E-4 o 25 C o 125 C o 150 C o 175 C 1E-5 1E-6 1E-7 1E-8 1E-9 20 40 60 80 100 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Typical Performance Characteristics (Continued) 10000 Capacitance (pF) o TJ=25 C 1000 100 10 20 40 60 80 100 VR, Reverse Voltage (V) Figure 6. Capacitance vs. VR, Reverse Voltage IAV, Average Foward Current (A) 14 12 10 Square 8 6 4 2 0 100 110 120 130 140 150 160 170 180 o Case Temperature ( C) Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode) Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 9.660(0.380) 10.660(0.420) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) φ1.500(0.059) 1.160(0.046) 1.760(0.069) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 14.230(0.560) 16.510(0.650) 1.850(0.073) φ3.560(0.140) 4.060(0.160) 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 4 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) ∅ 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 11.100(0.437) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 6.300(0.248) 6.700(0.264) 1.620(0.064) 1.820(0.072) 9.000(0.354) 9.400(0.370) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 0.700(0.028) 0.900(0.035) 2.540(0.100) REF 12.600(0.496) 13.600(0.535) 1.170(0.046) 1.390(0.055) 9.600(0.378) 10.600(0.417) 3.000(0.118) REF 3° 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) ٛ 3.000(0.119) ∅ 3.550(0.140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 4 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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