CHENMKO ENTERPRISE CO.,LTD BAS21N1PT SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere APPLICATION * Ultra high speed switching FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * High speed. (TRR=30nSec Typ.) * Suitable for high packing density. 0.5±0.05 1.0±0.05 0.37(REF.) CONSTRUCTION 1.0±0.05 * Silicon epitaxial planar 0.25(REF.) 0.05±0.04 0.68±0.05 0.42±0.05 CIRCUIT (2) 0.3±0.05 (1) 0.26±0.05 Dimensions in millimeters (3) FBPT-923 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL BAS21N1PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 250 Volts Maximum RMS Voltage VRMS 141 Volts Maximum DC Blocking Voltage VDC 200 Volts IO 200 mAmps Maximum Average Forward Rectified Current at TL = 100oC @ t=1.0uS Non-Repetitive Peak Forward Surge Current @ t=1.0S IFSM 2.5 0.5 Amps Typic Junction Capacitance (Note 2) CJ 5.0 pF Maximum Reverse Recovery Time (Note 3) TRR 50 nS R Typical Thermal Resistance (Note 1) Storage and Operating Temperature Range JA TJ, TSTG 833 -65 to +150 o C/W o C o ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL @ IF = 100 mA Breakdown Voltage(Minimun) UNITS 1.00 Volts VF Maximum Instantaneous Forward Voltage Maximum Average Reverse Current at Ratied DC Blocking Voltage BAS21N1PT @ IF = 200 mA 1.25 Volts @ TA = 25oC 100 nAmps 15 uAmps IR @ TJ = 100oC Bv 250 NOTES : 1. Thermal Resistance ( Junction to Lead ) : PC Board Mounted on 0.06 X 0.06" ( 0.15X 0.15mm ) copper pad area. 2. Measured at 1.0 MHZ and applied reverse voltage of 0 volt. 3. IF=IR=30 mA, IRR=0.1XIR, RL=100 ohms Volts 2006-07 FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 125 FIG. 2 - FORWARD CHARACTERISTICS 500 FORWARD CURRENT, (mA) AVERAGE FORWARD CURRENT, (%) RATING CHARACTERISTIC CURVES ( BAS21N1PT) 100 75 50 25 0 200 100 50 Ta=85oC 50oC 25oC 0oC o - 30 C 20 10 5 2 1 25 0 50 75 100 125 150 0 o 0.4 0.6 0.8 1.0 1.4 1.2 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 5 10u Ta=100oC 1u 75oC f=1MHz REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) 0.2 AMBIENT TEMPERATURE, ( C) 4 2 1.6 50oC 100 25oC 10 0oC - 25oC 1 0.1 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) 16 18 20 0 50 100 150 REVERSE VOLTAGE, (V) 200