SMD ESD Protection Diode CPDT6-3V3UP RoHS Device Features SOT-23-6 -IEC61000-4-2 (ESD) ±15 kV(Contact),±20kV(Air). -Working voltage: 3.3V 0.119(3.02) 0.111(2.82) -Low leakage current. -Low operating and clamping voltages. 0.067(1.70) 0.059(1.50) Mechanical data 0.079(2.00) 0.071(1.80) -Case: SOT-23-6 standard package ,molded plastic. -Mounting position: Any 0.008(0.20) 0.004(0.10) -Weight: 0.015 gram(approx.). 0.045(1.15) 0.041(1.05) 0.116(2.95) 0.104(2.65) Circuit Diagram 6 5 4 0.020(0.50) 0.012(0.30) 1 2 0.004(0.10)max 0.012(0.30)min 3 Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current IPP 5 A VESD ±20 ±15 kV Tj -55 to +125 O -55 to +125 O Parameter ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature TSTG C C Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Reverse stand-off voltage Symbol Min Typ Max Unit 3.3 VRWM V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR IPP = 1 A, tp=8/20us 0.5 uA VC 5.5 V IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz 16 pF 0.05 Clamping voltage Cj 12 REV:A Page 1 QW-BP030 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDT6-3V3UP) Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time Fig. 2 - Power rating derating curve 110 100 90 80 Power rating (%) Max. peak pulse power-PPP(kW ) 1 0.1 70 60 50 40 30 20 10 0.01 0 0.1 1 100 10 0 1000 25 50 75 100 Ambient temperature ( Pulse duration-tp(us) Fig.3 - Clamping voltage vs. peak pulse current 150 C) Fig.4 - Forward voltage vs. Forward current 16 12 Waveform Parameters: tr=8us td=20us 14 10 12 Forward voltage (V) Clamping voltage (V) 125 O 10 8 Waveform Parameters: tr=8us td=20us 6 4 8 6 4 2 2 0 0 0 1 2 3 4 5 6 Peak pulse current(A) 0 1 2 3 4 5 6 Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage Normalized capacitance - Cj (pF) 20 16 12 8 4 0 0 1 2 3 4 Reverse voltage (V) REV:A Page 2 QW-BP030 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 T E Index hole F W B C P A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-23-6 SOT-23-6 SYMBOL A B C d D D1 D2 (mm) 3.17 ± 0.10 3.23 ± 0.10 1.37 ± 0.10 1.55 ± 0.10 178 ± 1 50.0 MIN. 13.0 ± 0.20 (inch) 0.124 ± 0.004 0.127 ± 0.004 0.054 ± 0.004 0.061 ± 0.004 7.008 ± 0.040 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.012 0.567 MAX REV:A Page 3 QW-BP030 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code 6 Part Number Marking Code CPDT6-3V3UP E3V3 5 4 E3V3 . 1 2 3 Suggested PAD Layout C SOT-23-6 SIZE A (mm) (inch) 1.10 0.043 A D B 0.60 0.024 C 1.90 0.075 D 2.50 0.098 E 3.60 0.142 E B Standard Packaging REEL PACK Case Type SOT-23-6 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:A Page 4 QW-BP030 Comchip Technology CO., LTD.