COMCHIP CPDT6

SMD ESD Protection Diode
CPDT6-3V3UP
RoHS Device
Features
SOT-23-6
-IEC61000-4-2 (ESD) ±15 kV(Contact),±20kV(Air).
-Working voltage: 3.3V
0.119(3.02)
0.111(2.82)
-Low leakage current.
-Low operating and clamping voltages.
0.067(1.70)
0.059(1.50)
Mechanical data
0.079(2.00)
0.071(1.80)
-Case: SOT-23-6 standard package ,molded plastic.
-Mounting position: Any
0.008(0.20)
0.004(0.10)
-Weight: 0.015 gram(approx.).
0.045(1.15)
0.041(1.05)
0.116(2.95)
0.104(2.65)
Circuit Diagram
6
5
4
0.020(0.50)
0.012(0.30)
1
2
0.004(0.10)max
0.012(0.30)min
3
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
40
W
Peak pulse current
IPP
5
A
VESD
±20
±15
kV
Tj
-55 to +125
O
-55 to +125
O
Parameter
( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
TSTG
C
C
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Reverse stand-off voltage
Symbol Min Typ Max Unit
3.3
VRWM
V
Punch-through voltage
IPT = 2uA
VPT
3.5
V
Snap-back voltage
ISB = 50mA
VSB
2.8
V
Reverse leakage current
VRWM = 3.3V
IR
IPP = 1 A, tp=8/20us
0.5
uA
VC
5.5
V
IPP = 5 A, tp=8/20us
VC
8.0
V
Reverse clamping voltage
IPPR = 1 A, tp=8/20us
VCR
2.4
V
Junction capacitance
VR = 0 V, f = 1MHz
16
pF
0.05
Clamping voltage
Cj
12
REV:A
Page 1
QW-BP030
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDT6-3V3UP)
Fig. 1 - Non-repetitive max. peak pulse power
vs. pulse time
Fig. 2 - Power rating derating curve
110
100
90
80
Power rating (%)
Max. peak pulse power-PPP(kW )
1
0.1
70
60
50
40
30
20
10
0.01
0
0.1
1
100
10
0
1000
25
50
75
100
Ambient temperature (
Pulse duration-tp(us)
Fig.3 - Clamping voltage vs.
peak pulse current
150
C)
Fig.4 - Forward voltage vs.
Forward current
16
12
Waveform
Parameters:
tr=8us
td=20us
14
10
12
Forward voltage (V)
Clamping voltage (V)
125
O
10
8
Waveform
Parameters:
tr=8us
td=20us
6
4
8
6
4
2
2
0
0
0
1
2
3
4
5
6
Peak pulse current(A)
0
1
2
3
4
5
6
Forward current(A)
Fig.5 - Junction capacitance vs.
reverse voltage
Normalized capacitance - Cj (pF)
20
16
12
8
4
0
0
1
2
3
4
Reverse voltage (V)
REV:A
Page 2
QW-BP030
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-23-6
SOT-23-6
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.17 ± 0.10
3.23 ± 0.10
1.37 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
(inch)
0.124 ± 0.004
0.127 ± 0.004
0.054 ± 0.004
0.061 ± 0.004
7.008 ± 0.040
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
0.567 MAX
REV:A
Page 3
QW-BP030
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
6
Part Number
Marking Code
CPDT6-3V3UP
E3V3
5
4
E3V3
.
1
2
3
Suggested PAD Layout
C
SOT-23-6
SIZE
A
(mm)
(inch)
1.10
0.043
A
D
B
0.60
0.024
C
1.90
0.075
D
2.50
0.098
E
3.60
0.142
E
B
Standard Packaging
REEL PACK
Case Type
SOT-23-6
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:A
Page 4
QW-BP030
Comchip Technology CO., LTD.