Silicon Bridge Rectifiers TB2S-G Thru. TB10S-G Reverse Voltage: 200 to 1000 Volts Forward Current: 0.8,1.0 A RoHS Device Features TBS -Glass passivated chip junction. 0.028 (0.70) 0.024 (0.60) -High surge overload rating :30A peak -Save space on printed circuit boards. - + 0.179 (4.55) 0.167 (4.25) -High temperature soldering guaranteed: 260°C/10 seconds at 5 ibs. 0.012 (0.30) 0.008 (0.20) -Pb free product. 0.264 (6.70) 0.161 (4.10) 0.154 (3.90) -Plastic materrial has U/L flammability classification 94v-0. Mechanical data 0.249 (6.30) 0.205 (5.20) 0.189 (4.80) -Polarity: Symbol molded on body. -Case: Molded plastic body over passivated junction. -Terminals: Plated leads solderable per MIL-STD-750, Method 2026. -Mounting position: Any. 0.006 (0.15) 0.002 (0.05) 0.060 (1.45) 0.051 (1.15) 0.028 (0.70) 0.024 (0.60) Dimensions in inches and (millimeter) Maximum ratings and electrical characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol TB2S-G TB4S-G TB6S-G TB8S-G TB10S-G Marking TB2S TB4S TB6S TB8S TB10S Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 800 1000 V Maximum RMS Voltage VRMS 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 200 400 600 800 1000 V Unit Parameter Maximum Average Forward Output Current 1) IF(AV) 0.8 2) 1.0 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave, Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Instantaneous Forward Voltage at 0.4A DC VF 0.95 V Maximum Reverse Current @TA=25°C at Rated DC Blocking Voltage IR 10 μA TL=100°C Typical Thermal Junction to lead On aluminum substrate On glass-epoxy substrate Operating Junction Temperature Range Storage Temperature Range 25 62.5 80 RθJL RθJA °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Notes: 1. On glass epoxy P.C.B 2. On aluminum substrate REV:A Page 1 QW-BBR53 Comchip Technology CO., LTD. Silicon Bridge Rectifiers RATING AND CHARACTERISTIC CURVES (TB2S-G thru TB10S-G) Fig.2 - Forward Derating Curve Fig.1 - Typical Forward Characteristics Average Forward Rectified Current, (A) Instantaneous Forward Current, (A) 1.0 0.4 0.1 0.01 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Aluminum Substrate 0.75 Glass Epoxy P.C.B 0.5 0.25 Resistive or Inductive Load 0 0 1.5 25 50 75 100 125 150 Instantaneous Forward Voltage, (V) Ambient temperature, (°C) Fig.3 - Typical Reverse Characteristics Fig.4 - Peak Forward Surge Current 10000 40 Peak Forward Surge Current, (A) Instantaneous Reverse Current, (µA) 1.0 10000 1000 TA=100 OC 100 TA=25 OC 10 1.0 0 20 40 60 80 100 120 140 30 20 10 Pulse width 8.3mS, single half-sine wave (JEDEC Method) 0 1 Percent of Rated Peak Reverse Voltage, (%) 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BBR53 Comchip Technology CO., LTD. Silicon Bridge Rectifiers Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed TBS TBS SYMBOL A B C d D D1 D2 (mm) 5.50 ± 0.10 6.85 ± 0.10 2.10 ± 0.10 1.55 ± 0.05 330 ± 0.1 75 ± 0.1 13.0 ± 0.10 (inch) 0.217 ± 0.004 0.270 ± 0.004 0.083 ± 0.004 0.061 ± 0.002 12.992 ± 0.004 2.953 ± 0.004 0.512 ± 0.004 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.10 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 18.00 ± 0.1 (inch) 0.069 ± 0.004 0.217 ± 0.004 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 ± 0.002 0.472 ± 0.012 0.709 ± 0.004 REV:A Page 3 QW-BBR53 Comchip Technology CO., LTD. Silicon Bridge Rectifiers Suggested PAD Layout A TBS SIZE (mm) (inch) A 0.68MIN 0.027MIN B 4.0±0.1 0.157±0.004 C 0.62MIN 0.024MIN D 6.70MAX 0.264MAX D C B Standard Packaging REEL PACK Case Type TBS REEL Reel Size ( pcs ) (inch) 1,500 13 REV:A Page 4 QW-BBR53 Comchip Technology CO., LTD.