㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 䂓㪞㪼㫅㪼㫉㪸㫃㩷㪛㪼㫊㪺㫉㫀㫇㫋㫀㫆㫅䇭 䂓㪝㪼㪸㫋㫌㫉㪼㫊 㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪㩷 㫌㫊㪼㫊㩷 㪸㪻㫍㪸㫅㪺㪼㪻㩷 㫋㫉㪼㫅㪺㪿㩷 㩷㩷㩷㪥㪄㪺㪿㪸㫅㫅㪼㫃㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪧㪄㪺㪿㪸㫅㫅㪼㫃 㫋㪼㪺㪿㫅㫆㫃㫆㪾㫐㩷 㫋㫆㩷 㫇㫉㫆㫍㫀㪻㪼㩷 㪼㫏㪺㪼㫃㫃㪼㫅㫋㩷 㪩㪻㫊㩿㫆㫅㪀㩷 䊶 㪭㪻㫊㪔㪉㪇㪭㩷 㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪭㪻㫊㪔㪄㪉㪇㪭㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷 㪸㫅㪻㩷㫃㫆㫎㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼㪅㩷 䊶 㪠㪻㪔㪊㪅㪋㪘㩿㪭㪾㫊㪔㪋㪅㪌㪭㪀㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪠㪻㪔㪄㪉㪅㪌㪘㩿㪭㪾㫊㪔㪄㪋㪅㪌㪭㪀㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷 䊶 㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪍㪇㫄㱅㩿㪭㪾㫊㪔㪋㪅㪌㪭㪀㩷㩷㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪈㪈㪇㫄㱅㩿㪭㪾㫊㪔㪄㪋㪅㪌㪭㪀㩷㩷㩷㩷 䊶㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪎㪌㫄㱅㩿㪭㪾㫊㪔㪉㪅㪌㪭㪀㩷㩷㩷㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪈㪋㪇㫄㱅㩿㪭㪾㫊㪔㪄㪉㪅㪌㪭㪀 䊶㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪈㪇㪇㫄㱅㩿㪭㪾㫊㪔㪈㪅㪏㪭㪀㩷㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪉㪇㪇㫄㱅㩿㪭㪾㫊㪔㪄㪈㪅㪏㪭㪀 䂓㪤㪸㫏㫀㫄㫌㫄㩷㪘㪹㫊㫆㫃㫌㫋㪼㩷㪩㪸㫋㫀㫅㪾㫊 㪧㪸㫉㪸㫄㪼㫋㪼㫉 㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫍㫆㫃㫋㪸㪾㪼 㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㫍㫆㫃㫋㪸㪾㪼 㪚㫆㫅㫋㫀㫅㫌㫆㫌㫊㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪪㫐㫄㪹㫆㫃 㪭㪻㫊 㪭㪾㫊 㪫㪸㪔㪉㪌㷄㩷 㪫㪸㪔㪎㪇㷄 㪧㫌㫃㫊㪼㪻㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪠㪻 㪠㪻㫄 㪫㪸㪔㪉㪌㷄㩷 㪧㫆㫎㪼㫉㩷㪻㫀㫊㫊㫀㫇㪸㫋㫀㫆㫅 㪫㪸㪔㪎㪇㷄 㪡㫌㫅㪺㫋㫀㫆㫅㩷㪸㫅㪻㩷㫊㫋㫆㫉㪸㪾㪼㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㩷㫉㪸㫅㪾㪼 㪧㪻 㪫㫁㪃㪫㫊㫋㪾 㪥㪄㪺㪿㩷㩿㪤㪸㫏㪅㪀 㪉㪇 㫧㪏 㪊㪅㪋 㪉㪅㪎 㪈㪌 㪈㪅㪈㪌 㪇㪅㪎㪊 㪄㪌㪌㩷㫋㫆㩷㪈㪌㪇 㪧㪄㪺㪿㩷㩿㪤㪸㫏㪅㪀 㪄㪉㪇 㫧㪏 㪄㪉㪅㪌 㪄㪉㪅㪇 㪄㪈㪌 㪈㪅㪈㪌 㪇㪅㪎㪊 㪄㪌㪌㩷㫋㫆㩷㪈㪌㪇 㪬㫅㫀㫋 㪥㫆㫋㪼 㪭 㪭 㪘 㪈 㪘 㪉 㪮 㷄 䂓㪫㪿㪼㫉㫄㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊 㪧㪸㫉㪸㫄㪼㫋㪼㫉㩷 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㫃㪼㪸㪻 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋 㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㫃㪼㪸㪻 㪪㫐㫄㪹㫆㫃 㫋㻟㪈㪇㫊 㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼 㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼 㫋㻟㪈㪇㫊 㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼 㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼 㪩㱔㫁㪸 㪥㪄㪺㪿 㪩㱔㫁㫃 㪩㱔㫁㪸 㪩㱔㫁㫃 䂓㪧㫀㫅㩷㪚㫆㫅㪽㫀㪾㫌㫉㪸㫋㫀㫆㫅㩷 㪪㪦㪫㪄㪉㪍㩷㩿㪫㪦㪧㩷㪭㪠㪜㪮㪀 㪛㪼㫍㫀㪺㪼 㪧㪄㪺㪿 㪫㫐㫇㪅 㪎㪏 㪈㪇㪍 㪍㪋 㪎㪏 㪈㪇㪍 㪍㪋 㪤㪸㫏㪅 㪈㪈㪇 㪈㪌㪇 㪏㪇 㪈㪈㪇 㪈㪌㪇 㪏㪇 㪬㫅㫀㫋 㷄㪆㪮 㷄㪆㪮 㷄㪆㪮 㷄㪆㪮 㷄㪆㪮 㷄㪆㪮 㪥㫆㫋㪼 㪈 㪊 㪈 㪊 䂓㪚㫀㫉㪺㫌㫀㫋 䊶 㪥䋭㪺㪿 㪧㫀㫅㩷㪥㫆㪅 㪈 㪉 㪊 㪋 㪌 㪍 㪧㫀㫅㩷㫅㪸㫄㪼 㪞㪘㪫㪜㪈 㪪㪦㪬㪩㪚㪜㪉 㪞㪘㪫㪜㪉 㪛㪩㪘㪠㪥㪉 㪪㪦㪬㪩㪚㪜㪈 㪛㪩㪘㪠㪥㪈 䊶 㪧䋭㪺㪿 㪛㪈 㪞㪈 㪞㪉 㪪㪈 㪎㪄 㪈 㪛㪉 㪪㪉 㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 䂓㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪥㪄㪺㪿㪀 㪧㪸㫉㪸㫄㪼㫋㪼㫉 㪪㪫㪘㪫㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㪹㫉㪼㪸㫂㪻㫆㫎㫅㩷㫍㫆㫃㫋㪸㪾㪼 㪱㪼㫉㫆㩷㪾㪸㫋㪼㩷㫍㫆㫃㫋㪸㪾㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪞㪸㫋㪼㪄㪹㫆㪻㫐㩷㫃㪼㪸㫂㪸㪾㪼㩷㪺㫌㫉㫉㪼㫅㫋 㪞㪸㫋㪼㩷㫋㪿㫉㪼㫊㪿㫆㫃㪻㩷㫍㫆㫃㫋㪸㪾㪼 㪦㫅㩷㫊㫋㪸㫋㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪪㫋㪸㫋㫀㪺㩷㪻㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫆㫅㪄㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼 㪝㫆㫉㫎㪸㫉㪻㩷㫋㫉㪸㫅㫊㪺㫆㫅㪻㫌㪺㫋㪸㫅㪺㪼 㪛㫀㫆㪻㪼㩷㪽㫆㫉㫎㪸㫉㪻㩷㫍㫆㫃㫋㪸㪾㪼 㪤㪸㫏㪅㪹㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㪺㫆㫅㫋㫀㫅㫌㫆㫌㫊㩷㪺㫌㫉㫉㪼㫅㫋 㪛㪰㪥㪘㪤㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪠㫅㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪦㫌㫋㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪩㪼㫍㪼㫉㫊㪼㩷㫋㫉㪸㫅㫊㪽㪼㫉㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪞㪸㫋㪼㩷㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼 㪪㪮㪠㪫㪚㪟㪠㪥㪞㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪫㫆㫋㪸㫃㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼 㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㪺㪿㪸㫉㪾㪼 㪞㪸㫋㪼㪄㪻㫉㪸㫀㫅㩷㪺㪿㪸㫉㪾㪼 㪫㫌㫉㫅㪄㫆㫅㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼 㪫㫌㫉㫅㪄㫆㫅㩷㫉㫀㫊㪼㩷㫋㫀㫄㪼 㪫㫌㫉㫅㪄㫆㪽㪽㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼 㪫㫌㫉㫅㪄㫆㪽㪽㩷㪽㪸㫃㫃㩷㫋㫀㫄㪼 㪙㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㫉㪼㫍㪼㫉㫊㪼㩷㫉㪼㪺㫆㫍㪼㫉㫐㩷㫋㫀㫄㪼 㪙㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㫉㪼㫍㪼㫉㫊㪼㩷㫉㪼㪺㫆㫍㪼㫉㫐㩷㪺㪿㪸㫉㪾㪼 㪪㫐㫄㪹㫆㫃 㪚㫆㫅㪻㫀㫋㫀㫆㫅㫊 㪙㪭㪻㫊㫊 㪠㪻㪔㪉㪌㪇㱘㪘㪃㩷㪭㪾㫊㪔㪇㪭 㪭㪻㫊㪔㪈㪍㪭 㪠㪻㫊㫊 㪭㪾㫊㪔㪇㪭 㪫㫁㪔㪌㪌㷄 㪠㪾㫊㫊 㪭㪻㫊㪔㪇㪭㪃㩷㪭㪾㫊㪔㫧㪏㪭 㪭㪾㫊㩿㫋㪿㪀 㪭㪻㫊㪔㪭㪾㫊㪃㩷㪠㪻㪔㪉㪌㪇㱘㪘 㪠㪻㩿㫆㫅㪀 㪭㪾㫊㪔㪋㪅㪌㪭㪃㩷㪭㪻㫊㪔㪌㪭 㪭㪾㫊㪔㪋㪅㪌㪭 㪠㪻㪔㪊㪅㪋㪘 㪫㫁㪔㪈㪉㪌㷄 㪩㪻㫊㩿㫆㫅㪀 㪭㪾㫊㪔㪉㪅㪌㪭㪃㩷㪠㪻㪔㪊㪘 㪭㪾㫊㪔㪈㪅㪏㪭㪃㩷㪠㪻㪔㪉㪘 㪞㪽㫊 㪭㪻㫊㪔㪌㪭㪃㩷㪠㪻㪔㪊㪅㪋㪘 㪭㫊㪻 㪠㫊㪔㪈㪘㪃㩷㪭㪾㫊㪔㪇㪭 㪠㫊 㪤㫀㫅㪅 㪫㫐㫇㪅 㪫㪸㪔㪉㪌㷄 㪤㪸㫏㪅 㪬㫅㫀㫋 㪉㪇 㪇㪅㪋 㪈㪌 㪭 㪇㪅㪍 㪋㪍 㪍㪊 㪌㪎 㪎㪉 㪈㪇 㪇㪅㪎㪍 㪈 㪌 㪈㪇㪇 㪈㪅㪇 㪍㪇 㪏㪇 㪎㪌 㪈㪇㪇 㪈㪅㪇㪇 㪉 㪚㫀㫊㫊 㪚㫆㫊㫊 㪭㪾㫊㪔㪇㪭㪃㩷㪭㪻㫊㪔㪈㪇㪭㪃㩷㪽㪔㪈㪤㪟㫑 㪚㫉㫊㫊 㪩㪾 㪭㪾㫊㪔㪇㪭㪃㩷㪭㪻㫊㪔㪇㪭㪃㩷㪽㪔㪈㪤㪟㫑 㪋㪊㪍 㪍㪍 㪋㪋 㪊 㪌㪎㪇 㪨㪾 㪨㪾㫊 㪨㪾㪻 㫋㪻㩿㫆㫅㪀 㫋㫉 㫋㪻㩿㫆㪽㪽㪀 㫋㪽 㫋㫉㫉 㪨㫉㫉 㪍㪅㪉 㪈㪅㪍 㪇㪅㪌 㪌㪅㪌 㪍㪅㪊 㪋㪇㪅㪇 㪈㪉㪅㪎 㪈㪉㪅㪊 㪊㪅㪌 㪏㪅㪈 㪭㪾㫊㪔㪋㪅㪌㪭㪃㩷㪭㪻㫊㪔㪈㪇㪭㪃㩷㪠㪻㪔㪊㪅㪋㪘 㪭㪾㫊㪔㪌㪭㪃㩷㪭㪻㫊㪔㪈㪇㪭㩷 㪩㫃㪔㪊㱅㪃㩷㪩㪾㪼㫅㪔㪊㱅 㪠㪽㪔㪊㪅㪋㪘㪃㩷㪻㫃㪆㪻㫋㪔㪈㪇㪇㪘㪆㱘㫊 㪠㪽㪔㪊㪅㪋㪘㪃㩷㪻㫃㪆㪻㫋㪔㪈㪇㪇㪘㪆㱘㫊 㪋 㪈㪍㪅㪇 㱘㪘 㫅㪘 㪭 㪘 㫄㱅 㪪 㪭 㪘 㫇㪝 㫇㪝 㫇㪝 㱅 㫅㪚 㫅㪚 㫅㪚 㫅㫊 㫅㫊 㫅㫊 㫅㫊 㫅㫊 㫅㪚 㪥㪦㪫㪜㩷㪑 㪈㪅 㪫㪿㪼㩷 㫍㪸㫃㫌㪼㩷 㫆㪽㩷 㪩㱔㫁㪸㩷 㫀㫊㩷 㫄㪼㪸㫊㫌㫉㪼㪻㩷 㫎㫀㫋㪿㩷 㫋㪿㪼㩷 㪻㪼㫍㫀㪺㪼㩷 㫄㫆㫌㫅㫋㪼㪻㩷 㫆㫅㩷 㪈㫀㫅㫨㩷 㪝㪩㪄㪋㩷 㪹㫆㪸㫉㪻㩷 㫆㪽㩷 㪉㫆㫑㪅㩷 㪚㫆㫇㫇㪼㫉㪃㩷 㫀㫅㩷 㫊㫋㫀㫃㫃㩷 㪸㫀㫉㩷 㪼㫅㫍㫀㫉㫆㫅㫄㪼㫅㫋㩷 㫎㫀㫋㪿㩷 㪫㪸㪔㪉㪌㷄㪅㩷 㪫㪿㪼㩷 㫍㪸㫃㫌㪼㩷 㫀㫅㩷 㪸㫅㫐㩷 㪾㫀㫍㪼㫅㩷 㪸㫇㫇㫃㫀㪺㪸㫋㫀㫆㫅㫊㩷 㪻㪼㫇㪼㫅㪻㫊㩷 㫆㫅㩷 㫋㪿㪼㩷 㫌㫊㪼㫉㵭㫊㩷 㫊㫇㪼㪺㫀䋡㩷㪺㩷 㩷 㪹㫆㪸㫉㪻㩷 㪻㪼㫊㫀㪾㫅㪃㩷 㪫㪿㪼㩷㪺㫌㫉㫉㪼㫅㫋㩷㫉㪸㫋㫀㫅㪾㩷㫀㫊㩷㪹㪸㫊㪼㪻㩷㫆㫅㩷㫋㪿㪼㩷㫋㻟㪈㪇㫊㩷㫋㪿㪼㫄㪸㫃㩷㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼㩷㫉㪸㫋㫀㫅㪾㪅 㪉㪅 㪩㪼㫇㪼㫋㫀㫋㫀㫍㪼㩷㫉㪸㫋㫀㫅㪾㪃㩷㫇㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㫃㫀㫄㫀㫋㪼㪻㩷㪹㫐㩷㫁㫌㫅㪺㫋㫀㫆㫅㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅㩷 㪊㪅 㪫㪿㪼㩷㪩㱔㫁㪸㩷㫀㫊㩷㫋㪿㪼㩷㫊㫌㫄㩷㫆㪽㩷㫋㪿㪼㩷㫋㪿㪼㫉㫄㪸㫃㩷㫀㫄㫇㪼㪻㪸㫅㪺㪼㩷㪽㫉㫆㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㩷㫋㫆㩷㫃㪼㪸㪻㩷㪩㱔㫁㫃㩷㪸㫅㪻㩷㫃㪼㪸㪻㩷㫋㫆㩷㪸㫄㪹㫀㪼㫅㫋㪅 㪋㪅 㪫㪿㪼㩷㫊㫋㪸㫋㫀㪺㩷㪺㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㫀㫅㩷㪝㫀㪾㫌㫉㪼㫊㩷㪈㩷㫋㫆㩷㪍㩷㪸㫉㪼㩷㫆㪹㫋㪸㫀㫅㪼㪻㩷㫌㫊㫀㫅㪾㩷㪏㪇㱘㫊㩷㫇㫌㫃㫊㪼㫊㪃㩷㪻㫌㫋㫐㩷㪺㫐㪺㫃㪼㩷㪇㪅㪌䋦㫄㪸㫏㪅 㪌㪅 㪫㪿㪼㫊㪼㩷 㫋㪼㫊㫋㫊㩷 㪸㫉㪼㩷 㫇㪼㫉㪽㫆㫉㫄㪼㪻㩷 㫎㫀㫋㪿㩷 㫋㪿㪼㩷 㪻㪼㫍㫀㪺㪼㩷 㫄㫆㫌㫅㫋㪼㪻㩷 㫆㫅㩷 㪈㫀㫅㫨㩷 㪝㪩㪄㪋㩷 㪹㫆㪸㫉㪻㩷 㫎㫀㫋㪿㩷 㪉㫆㫑㪅㩷 㪚㫆㫇㫇㪼㫉㪃㩷 㫀㫅㩷 㪸㩷 㫊㫋㫀㫃㫃㩷 㪸㫀㫉㩷 㪼㫅㫍㫀㫉㫆㫅㫄㪼㫅㫋㩷㫎㫀㫋㪿㩷㪫㪸㪔㪉㪌㷄㪅㩷㪫㪿㪼㩷㪪㪦㪘㩷㪺㫌㫉㫍㪼㩷㫇㫉㫆㫍㫀㪻㪼㫊㩷㪸㩷㫊㫀㫅㪾㫃㪼㩷㫇㫌㫃㫊㪼㩷㫉㪸㫋㫀㫅㪾㪅㩷 㪎㪄 㪉 㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 䂓㪫㫐㫇㫀㪺㪸㫃㩷㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪸㫅㪻㩷㪫㪿㪼㫉㫄㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪥㪄㪺㪿㪀 10 16 8V Vds=5V 4.5V 8 2V 3V 2.5V 8 Id (A) Id (A) 12 6 4 125°C Vgs=1.5V 4 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance Rds(on) (m:) 1.5 2 2.5 1.8 Vgs=1.8V 80 Vgs=2.5V 60 40 Vgs=4.5V 20 Vgs=2.5V 1.6 Vgs=1.8V Id=3.4A 1.4 Vgs=4.5V 1.2 1 0.8 0 4 8 12 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 90 1E+00 Id=3.4A 80 125°C 1E-01 70 Is (A) Rds(on) (m:) 1 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 125°C 60 1E-02 25°C 50 1E-03 25°C 40 1E-04 30 1E-05 20 0 2 4 6 0.0 8 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 㪎㪄 㪊 1.0 㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 800 5 Vds=10V Id=3.4A Capacitance (pF) Vgs (Volts) 4 3 2 600 Ciss 400 Coss 200 Crss 1 0 0 0 2 4 6 0 8 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 Tj(max.)=150°C Ta=25°C Tj(max.)=150°C Ta=25°C 100Ps Rds(on) limited 10Ps 1ms Power (W) Id (Amps) 15 10.0 0.1s 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZTja Normalized Transient Thermal Resistance 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Vds (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 㪎㪄 㪋 100 1000 㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 䂓㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪧㪄㪺㪿㪀 㪧㪸㫉㪸㫄㪼㫋㪼㫉 㪪㪫㪘㪫㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㪹㫉㪼㪸㫂㪻㫆㫎㫅㩷㫍㫆㫃㫋㪸㪾㪼 㪱㪼㫉㫆㩷㪾㪸㫋㪼㩷㫍㫆㫃㫋㪸㪾㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪞㪸㫋㪼㪄㪹㫆㪻㫐㩷㫃㪼㪸㫂㪸㪾㪼㩷㪺㫌㫉㫉㪼㫅㫋 㪞㪸㫋㪼㩷㫋㪿㫉㪼㫊㪿㫆㫃㪻㩷㫍㫆㫃㫋㪸㪾㪼 㪦㫅㩷㫊㫋㪸㫋㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋 㪪㫋㪸㫋㫀㪺㩷㪻㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫆㫅㪄㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼 㪝㫆㫉㫎㪸㫉㪻㩷㫋㫉㪸㫅㫊㪺㫆㫅㪻㫌㪺㫋㪸㫅㪺㪼 㪛㫀㫆㪻㪼㩷㪽㫆㫉㫎㪸㫉㪻㩷㫍㫆㫃㫋㪸㪾㪼 㪤㪸㫏㪅㩷㪹㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㪺㫆㫅㫋㫀㫅㫌㫆㫌㫊㩷㪺㫌㫉㫉㪼㫅㫋 㪛㪰㪥㪘㪤㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪠㫅㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪦㫌㫋㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪩㪼㫍㪼㫉㫊㪼㩷㫋㫉㪸㫅㫊㪽㪼㫉㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼 㪞㪸㫋㪼㩷㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼 㪪㪮㪠㪫㪚㪟㪠㪥㪞㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪 㪫㫆㫋㪸㫃㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼㩷 㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㪺㪿㪸㫉㪾㪼 㪞㪸㫋㪼㪄㪻㫉㪸㫀㫅㩷㪺㪿㪸㫉㪾㪼 㪫㫌㫉㫅㪄㫆㫅㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼 㪫㫌㫉㫅㪄㫆㫅㩷㫉㫀㫊㪼㩷㫋㫀㫄㪼 㪫㫌㫉㫅㪄㫆㪽㪽㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼 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Id=-2.5A 1.6 Vgs=-1.8V 1.4 Vgs=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 1E-01 150 -Is (A) Rds(on) (m:) Id=-2.5A 125°C 100 125°C 1E-02 25°C 1E-03 25°C 1E-04 1E-05 50 0 2 4 6 1E-06 8 0.0 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 㪎㪄 㪍 1.2 㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷 㪜㪣㪤㪈㪍㪍㪇㪋㪜㪘㪄㪪 800 5 Vds=-10V Id=-2.5A Capacitance (pF) -Vgs (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 20 Tj(max.)=150°C Ta=25°C Tj(max.)=150°C Ta=25°C 100Ps 10Ps 15 10.0 Power (W) -Id (Amps) 5 1ms Rds(on) limited 0.1s 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZTja Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 㪎㪄 㪎 100 1000