TS868C12R (30A) (120V / 30A ) [0402] High Voltage Schottky barrier diode 120 0.88 VRRM VF IO V V 30 1.5 Max Characteristics TS868C12R Units Condition Tc=25°C MAX. A 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Major characteristics 0.9 ±0.3 Outline drawings, mm +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Low VF High Voltage Center tap connection Package : T-pack Epoxy resin UL : V-0 Applications Features High frequency operation DC-DC converters AC adapter Connection diagram Maximum ratings and characteristics 1 2 3 Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions Rating Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage VRRM Average output current Io Square wave, duty=1/2 Tc=121°C Non-repetitive surge current ** IFSM Sine wave 10ms 1shot Operating junction temperature Tj Storage temperature Tstg tw=500ns, duty=1/40 Unit 120 V 120 V 30 * A 225 A +150 °C -40 to +150 °C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VF IFM=10A 0.88 V Reverse current IR VR=VRRM 200 µA 1.0 °C/W Thermal resistance Rth(j-c) Junction to case Mechanical characteristics Approximate mass 2 g (120V / 30A ) TS868C12R (30A) Characteristics Reverse Characteristic (typ.) Forward Characteristic (typ.) Tj=150°C 1 (A) 10 (mA) 10 0.1 Reverse Current Forward Current 1 IF Tj=150°C Tj=125°C Tj=100°C 0 10 Tj=100°C -1 10 Tj= 25°C -2 10 IR Tj=25°C Tj=125°C -3 10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF Forward Voltage 0 (V) 10 20 30 VR Forward Power Dissipation (max.) 40 50 60 70 Reverse Voltage 80 90 100 110 120 130 (V) Reverse Power Dissipation (max.) 8 Io (W) λ 18 Forward Power Dissipation DC 360° 20 360° Reverse Power Dissipation (W) 22 16 Square wave λ =60° 14 Square wave λ =120° Sine wave λ =180° Square wave λ =180° 10 DC 12 8 6 α α =180° 4 2 PR WF 4 VR 6 2 Per 1element 0 0 0 2 4 Io 6 8 10 12 14 Average Forward Current 16 18 0 (A) 20 40 VR Current Derating (Io-Tc) (max.) 60 80 Reverse Voltage 100 120 (V) Junction Capacitance Characteristic (max.) 1000 130 DC Sine wave λ =180° Square wave λ =180° 120 360° λ Io Square wave λ =120° 110 VR=60V Junction Capacitance (pF) 140 100 Tc Cj Case Temperature (°C) 150 Square wave λ =60° 100 0 5 10 Io 15 20 25 30 Average Output Current 35 40 45 (A) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 10 1 10 VR 100 Reverse Voltage (V) 1000 TS868C12R (30A) (120V / 30A ) Surge Current Ratings (max.) Surge Capability (max.) 1000 IFSM PeakHAlf-WaveCurrent (A) 100 I FSM Peak Half - Wave Current (A) 1000 100 10 10 1 10 1 100 10 Number of Cycles at 50Hz tTime (ms) Sinewave Transient Thermal Impedance (max.) 10 0 Transient Thermal Impedance (°C/W) 10 1 Rth(j-c):1.0°C/W 10 -1 10 -2 10 -3 10 -2 10 t -1 10 Time 100 0 (sec) 10 1 10 2 1000