JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DAN222E (1.6×1.6×0.5) unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. + + APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: N - N + + Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 80 V DC reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation PD 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55-150 ℃ Parameter ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN MAX UNIT V(BR) IR= 100µA Reverse voltage leakage current IR VR=70V 0.1 µA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6V, f=1MHz 3.5 Reverse recovery time trr VR=6V, IF=5mA 4 pF ns Reverse breakdown voltage 80 V Typical Characteristics DAN222E Sym bol A A1 b b1 D E D2 E2 e L L1 L2 L3 L4 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .2 3 0 0 .3 3 0 0 .3 2 0 R E F . 1 .5 5 0 1 .6 5 0 1 .5 5 0 1 .6 5 0 0 .7 5 0 R E F . 1 .0 0 0 R E F . 1 .0 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 8 0 R E F . 0 .2 5 0 R E F . 0 .2 0 0 R E F . 0 .3 2 0 R E F . 0 .1 6 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 9 0 .0 1 3 0 .0 1 3 R E F . 0 .0 6 1 0 .0 6 5 0 .0 6 1 0 .0 6 5 0 .0 3 0 R E F . 0 .0 4 0 R E F . 0 .0 4 0 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 7 R E F . 0 .0 1 0 R E F . 0 .0 0 8 R E F . 0 .0 1 3 R E F . 0 .0 0 6 R E F .