SEMICONDUCTOR MBRF10U45CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current : IO=10A. DIM B E G ・Repetitive Peak Reverse Voltage : VRRM=45V. K ・Fast Reverse Recovery Time : trr=35ns. L M J R D MAXIMUM RATING (Ta=25℃) N CHARACTERISTIC RATING UNIT VRRM 45 V Q Repetitive Peak Reverse Voltage SYMBOL Average Output Rectified Current (Tc=125℃) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range IO 10 A IFSM 100 A Tj -40~150 ℃ Tstg -55~150 ℃ 1 N 2 H 1. ANODE 3 2. CATHODE A B C D E F G H J K L M N O Q R MILLIMETERS _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + 3. ANODE TO-220IS (1) Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=5A - - 0.70 V IRRM VRRM=Rated - - 100 μA IF=1.0A, di/dt=-30A/㎲ - - 35 ns Juction to Case - - 4.5 ℃/W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2012. 3. 26 Revision No : 1 1/2 MBRF10U45CTA IF - V F IR - V R 100,000 10,000 Tj =125 C Tj =-25 C 1 0.1 Tj =25 C 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE VF (V) 2012. 3. 26 REVERSE CURRENT IR (µA) FORWARD CURRENT IF (A) 10 Revision No : 1 0.7 Tj =125 C 1,000 100 10 Tj =25 C 1 0.1 Tj =-25 C 0.01 0.001 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2/2