LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors With Monolithic Bias Resistor Network LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 3 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. 2 1 SOT-723 ƽSimplifies Circuit Design ƽReduces Board Space PIN 3 COLLECTOR (OUTPUT) ƽReduces Component Count ƽThe SOT-723 Package can be Soldered using Wave or Reflow. PIN 1 BASE (INPUT) ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices. R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) mW Rating Collector Current MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) °C/W Junction Temperature TJ 150 °C Storage Temperature Range Tstg –55 to +150 XX M 1 xx M 2 = Specific Device Code = Date Code °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Version 1.0 LDTC114EM3T5G_S-1/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G Version 1.0 Marking R1 (K) R2 (K) Package Shipping 8A 8B 8C 8D 94 8F 8H 8J 8K 8L 8M 8N 8P 8T 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 ∞ SOT−723 (Pb−Free) 8000/Tape & Reel LDTC114EM3T5G_S-2/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160 60 100 140 140 350 350 15 30 200 150 140 150 140 350 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) LDTC123EM3T5G (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/ LDTC143EM3T5G/LDTC143ZM3T5G/ LDTC124XM3T5G/LDTC144TM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) VOL LDTC114EM3T5G LDTC124EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC144EM3T5G LDTC144TM3T5G LDTC115EM3T5G LDTC144WM3T5G Vdc Vdc 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. Version 1.0 LDTC114EM3T5G_S-3/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) LDTC143TM3T5G LDTC143ZM3T5G LDTC114TM3T5G LDTC144TM3T5G VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 61.1 kW 0.8 1.0 1.2 0.17 − 0.8 0.055 0.38 0.038 1.7 0.21 − 1.0 0.1 0.47 0.047 2.1 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 4) Input Resistor LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G Resistor Ratio R1/R2 LDTC114EM3T5G/LDTC124EM3T5G/ LDTC144EM3T5G/LDTC115EM3T5G LDTC114YM3T5G LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G LDTC123EM3T5G/LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC144WM3T5G PD , POWER DISSIPATION (MILLIWATTS) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 300 250 200 150 100 50 0 −50 RqJA = 480°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Version 1.0 LDTC114EM3T5G_S-4/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 3 100 TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current Version 1.0 LDTC114EM3T5G_S-5/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC124EM3T5G IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 −25°C 100 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 f = 1 MHz IE = 0 V TA = 25°C 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75°C 25°C 10 50 40 VCE = 10 V 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Version 1.0 LDTC114EM3T5G_S-6/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series 10 1000 IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 TA=75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC144EM3T5G 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC 1 100 0.6 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 VO = 5 V 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Version 1.0 LDTC114EM3T5G_S-7/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series 300 1 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114YM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 2.5 2 1.5 1 0.5 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 Figure 19. Output Capacitance 45 50 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Version 1.0 LDTC114EM3T5G_S-8/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Version 1.0 Figure 24. Inexpensive, Unregulated Current Source LDTC114EM3T5G_S-9/10 LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G Series PACKAGE DIMENSIONS SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches Version 1.0 LDTC114EM3T5G-10/10