MIMIX CMM0015

2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Features
Chip Device Layout
Ultra Wide Band Power Amplifier
Compact Size/Self Bias Architecture
Positive Gain Slope
10.0 dB Small Signal Gain
+28.0 dBm P1dB Compression Point
+35.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 10.0
dB with a +28.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Test Instrumentation, Military,
Space, Microwave Point-to-Point Radio, SATCOM and
VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+13.0 VDC
400 mA
+23.0 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=12.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
10.0
5.0
7.5
+25.0
-
Typ.
15.0
10.0
10.0
+/-1.5
40.0
+28.0
+35.0
+29.0
+12.0
350
Max.
22.0
+12.5
380
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Power Amplifier Measurements (On Wafer)
CMM0015-BD, Vd=12.0 V (40 devices, 5 wafers)
15
Output Power P1dB (dBm)
14
13
Gain (dB)
12
11
10
9
8
7
CMM0015-BD, Vd=12.0 V (40 devices, 5 wafers)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
6
5
20
0.0
2.0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
2.0
4.0
6.0
8.0
10.0
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
CMM0015-BD, Vd=12.0 V (40 devices, 5 wafers)
0
12.0
14.0
16.0
18.0
20.0
22.0
Frequency (GHz)
Median
Mean
-3sigma
CMM0015-BD, Vd=12.0 V (40 devices, 5 wafers)
0
Output Return Loss (dB)
Input Return Loss (dB)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-5
-10
-15
-20
-25
-30
-50
-55
-35
0.0
2.0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
0.0
2.0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
Frequency (GHz)
Max
Median
Mean
-3sigma
Frequency (GHz)
Max
Median
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Mean
-3sigma
Page 2 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Power Amplifier Measurements (Text Fixture)
CMM0015-BD Vd=12.0 V, Id=347 mA
15
CMM0015-BD Vd=12.0 V, Id=347 mA
0
14
-10
Reverse Isolation (dB)
13
Gain (dB)
12
11
10
9
8
7
-20
-30
-40
-50
-60
6
-70
5
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
1.0
25.0
3.0
5.0
7.0
9.0
11.0
+85 Deg C
-40 deg C
+25 Deg C
+85 Deg C
CMM0015-BD Vd=12.0 V, Id=347 mA
0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
23.0
25.0
Frequency (GHz)
Frequency (GHz)
-40 Deg C
+25 Deg C
CMM0015-BD Vd=12.0 V, Id=347 mA
0
Output Return Loss (dB)
Input Return Loss (dB)
-5
-10
-15
-20
-25
-30
-35
-5
-10
-15
-20
-40
-25
-45
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
1.0
25.0
3.0
5.0
7.0
9.0
11.0
+85 Deg C
-40 Deg C
+25 Deg C
+85 Deg C
CMM0015-BD Vd=12.0 V, Id=347 mA
Output Third Order Intercept (dBm)
32
Output Power P1dB (dBm)
31
30
29
28
27
26
25
24
23
22
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
-40 Deg C
15.0
17.0
19.0
21.0
18.0
20.0
22.0
-40 Deg C
+25 Deg C
CMM0015-BD Vd=12.0 V, Id=347 mA
42
40
38
36
34
32
30
2.0
4.0
6.0
8.0
10.0
Frequency (GHz)
+85 Deg C
13.0
Frequency (GHz)
Frequency (GHz)
12.0
14.0
16.0
18.0
20.0
22.0
Frequency (GHz)
+25 Deg C
+85 Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
-40 Deg C
+25 Deg C
Page 3 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Power Amplifier Measurements (Test Fixture) (cont.)
CMM0015-BD Vd=See Legend, Id=236 mA
CMM0015-BD Vd=See Legend, Id=385 mA
14.0
13.5
13.5
13.0
13.0
12.5
12.5
12.0
12.0
Gain (dB)
Gain (dB)
14.0
11.5
11.0
10.5
11.5
11.0
10.5
10.0
10.0
9.5
9.5
9.0
9.0
8.5
8.5
8.0
8.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
1.0
3.0
5.0
7.0
9.0
Frequency (GHz)
Vd=8.0 V
Vd=9.0 V
Vd=10.0 V
Vd=11.0 V
Vd=12.0 V
Vd=8.0 V
15.0
17.0
19.0
21.0
23.0
25.0
Vd=9.0 V
Vd=10.0 V
Vd=11.0 V
Vd=12.0 V
CMM0015-BD Vd=See Legend, Id=385 mA
31
31
30
30
Output Power P1dB (dBm)
Output Power P1dB (dBm)
13.0
Frequency (GHz)
CMM0015-BD Vd=See Legend, Id=236 mA
29
28
27
26
25
24
23
22
21
29
28
27
26
25
24
23
22
21
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
2.0
4.0
6.0
8.0
Frequency (GHz)
Vd=8.0 V
Vd=9.0 V
Vd=10.0 V
Vd=11.0 V
Vd=12.0 V
Vd=8.0 V
Output Third Order Intercept (dBm)
44
42
40
38
36
34
32
30
28
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
Vd=9.0 V
Vd=9.0 V
Vd=10.0 V
14.0
16.0
18.0
20.0
Vd=11.0 V
Vd=10.0 V
Vd=11.0 V
Vd=12.0 V
20.0
46
44
42
40
38
36
34
32
30
28
2.0
4.0
6.0
8.0
Frequency (GHz)
Vd=8.0 V
12.0
CMM0015-BD Vd=See Legend, Id=385 mA
46
2.0
10.0
Frequency (GHz)
CMM0015-BD Vd=See Legend, Id=236 mA
Output Third Order Intercept (dBm)
11.0
10.0
12.0
14.0
16.0
18.0
20.0
Frequency (GHz)
Vd=12.0 V
Vd=8.0 V
Vd=9.0 V
Vd=10.0 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Vd=11.0 V
Vd=12.0 V
Page 4 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Power Amplifier Measurements (cont.)
CMM0015-BD Vd=See Legend, Id=350 mA
31
33
30
Output Power P1dB (dBm)
Output Power P3dB (dBm)
CMM0015-BD Vd=12.0 V, Id=350 mA
34
32
31
30
29
28
27
26
29
28
27
26
25
24
23
22
21
25
20
2.0
24
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency ( GHz)
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
Frequency (GHz)
Vd=8.0 V
Vd=10.0 V
Vd=12.0 V
CMM0015-BD Vd=12.0 V, Id=350 mA
10
9
Noise Figure (dB)
8
7
6
5
4
3
2
1
0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
S-Parameters
Typical S-Parameter Data for CMM0015
Vd=12.0 V Id=359 mA
Frequency
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
S11
(Mag)
0.245
0.162
0.168
0.152
0.132
0.083
0.044
0.032
0.074
0.118
0.149
0.162
0.153
0.122
0.070
0.010
0.069
0.131
0.172
0.185
0.166
0.110
0.023
0.091
0.211
0.275
0.253
0.290
0.442
0.544
0.600
0.613
0.612
0.628
0.645
0.663
0.689
0.720
0.752
0.777
S11
(Ang)
-81.34
-98.46
-117.97
-144.15
-169.37
173.67
171.01
-127.59
-113.58
-128.24
-147.51
-169.43
167.75
144.59
123.85
160.34
-130.58
-157.64
172.78
139.81
102.34
62.50
13.55
152.94
102.76
57.09
26.86
26.33
6.06
-17.38
-39.83
-57.56
-70.51
-80.22
-89.37
-97.58
-105.12
-112.46
-119.12
-126.07
S21
(Mag)
3.674
3.408
3.352
3.237
3.170
3.103
3.071
3.059
3.090
3.154
3.237
3.323
3.388
3.419
3.423
3.439
3.524
3.685
3.908
4.064
4.065
3.949
3.826
3.845
3.902
3.685
3.079
2.343
1.337
1.746
1.427
1.103
0.811
0.585
0.415
0.294
0.184
0.095
0.047
0.023
S21
(Ang)
-172.50
137.44
102.81
71.89
42.27
14.19
-13.91
-41.50
-69.18
-97.34
-126.07
-155.80
173.80
143.10
112.52
82.35
51.93
20.52
-13.25
-49.58
-87.36
-124.83
-161.58
160.80
118.58
71.22
22.89
-22.44
-66.96
-85.78
-136.46
177.14
130.36
87.42
43.07
-5.39
-55.09
-99.78
-142.19
-166.75
S12
(Mag)
0.0012
0.0018
0.0006
0.0007
0.0010
0.0007
0.0008
0.0012
0.0019
0.0025
0.0032
0.0038
0.0055
0.0058
0.0072
0.0084
0.0094
0.0103
0.0122
0.0155
0.0178
0.0181
0.0182
0.0207
0.0218
0.0245
0.0245
0.0202
0.0192
0.0189
0.0205
0.0194
0.0181
0.0133
0.0125
0.0092
0.0046
0.0065
0.0008
0.0038
S12
(Ang)
-23.38
142.02
-148.53
153.22
103.59
50.06
60.23
37.44
13.98
-0.11
-48.60
-62.84
-98.99
-124.12
-150.01
-179.28
150.16
131.14
101.70
69.58
38.14
2.57
-33.59
-66.60
-104.81
-143.67
175.08
140.31
117.76
74.39
48.67
14.52
-10.37
-36.95
-106.35
-123.98
-143.96
149.07
170.46
-146.72
S22
(Mag)
0.228
0.081
0.047
0.101
0.164
0.216
0.251
0.264
0.252
0.220
0.182
0.179
0.229
0.300
0.356
0.374
0.350
0.271
0.150
0.143
0.276
0.387
0.416
0.372
0.266
0.181
0.245
0.368
0.448
0.249
0.276
0.193
0.164
0.245
0.325
0.312
0.236
0.348
0.515
0.650
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
S22
(Ang)
164.84
153.23
-152.04
-119.67
-124.58
-135.95
-148.23
-160.10
-170.35
-177.00
-174.03
-159.67
-151.03
-155.84
-167.61
177.64
162.34
147.09
147.87
-158.46
-154.58
-171.89
168.36
150.42
139.33
156.00
179.54
168.56
120.17
175.57
148.59
143.54
170.53
-177.20
170.73
156.64
165.21
-177.05
173.38
155.12
Page 6 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Mechanical Drawing
2.234
(0.088)
1.165
(0.046)
0.377
(0.015)
2
1.059
(0.042)
3
0.639
(0.025)
1
6
5
4
0.0
2.135 2.340
(0.084) (0.092)
2.024 2.244
(0.080) (0.088)
0.0
(Note: Engineering designator is M430)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.69 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)
Bond Pad #4 (Rs-3.5 )
Bond Pad #5 (Rs-4.5 )
Bond Pad #6 (Rs-6.0 )
Bias Arrangement
Vd
Bypass Capacitors - See App Note [2]
2
3
RF In
RF Out
1
6
5
4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
App Note [1] Biasing - As shown in the bonding diagram, this device
operates using a self-biased architecture and only requires one drain bias.
Bias is nominally Vd=12.0 V, Id=350 mA. For additional assistance in setting
current via source resistor, see source resistance table below.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
Additionally, to achieve the required broadband decoupling network a
high-Q Drain bias inductor with high-Q bypass capacitor is needed. The
proper network is necessary in order to bring Drain bias into the device
with minimal impact on RF performance. The high-Q inductor is typically an air
coil that can be purchased from an air coil manufacturer (Microwave Components or Piconics for example). The air coil needs to have minimum
current handling capability, thus planned operating current needs to be defined and considered before defining actual air coil to be used. Mimix
recommends 1.4 mil diameter gold wire and 4 turns as a starting point and may need to be optimized based on the actual application. Selfresonance of the bias inductor causes degradation in performance at both the low and high ends of the band. The self resonance is sensitive to
spacing between turns and number of turns used. For example, the more turns in the Drain bias inductor the lower the self-resonant frequency of
the inductor creating high end RF performance degradation. The opposite is true for a smaller number of turns. In terms of coil attachment to
MMIC device (wedge bond tool method), cut coil leads to desired length, use tweezers or wedge bond tip (press on wire to pick up) to place coil
for bonding. Make first bond on MMIC die bond pad using wedge bonder tool. Move coil lead as necessary and make second and final bond to
bypass capacitor with wedge bond tool using same method as first bond.
CMM0015 - Source Resistance Table
Current Select - At times the need to balance performance against system
power budgets forces a trade off between bias current, gain, P1dB, or other
parameters. This note includes information on how to use the built-in binary
bias ladder to adjust the currents enabling this trade off. The bias is controlled
by the self bias resistor network in the bottom right corner of the die. These
resistors have binary relative values so that you can step the current from a
minimum to a maximum with multiple different bias options available along
the way. The infinity option is not useful as there is no current flow with all
resistors open. Using the information from the current select table shown
here allows the user to set the resistors adjusting the current up or down
from a nominal value. In addition, the table can be used to estimate how to
make a change with minimum trial and error. The net result is that the current
can be adjusted over a wide range with incremental control.
Left
6
0
1
0
0
1
1
0
1
Center
4.5
0
0
1
0
1
0
1
1
Corner
3.5
0
0
0
1
0
1
1
1
Net R
Infinity
6.00
4.50
3.50
2.57
2.21
1.97
1.48
Delta Current
mA
NA
-275
-225
-175
-100
-75
-50
Max
Bonding Substrate - If you are concerned about dialing in the exact current
or making fine adjustments to the bias point it is recommended that a
bonding substrate, like the one shown here, be used. The purpose is to allow
the chip to substrate wire bonds to be left intact and not to be used for
adjustments. The bond wires that go from the substrate to ground are then
added or subtracted to tune the bias as necessary.
App Note [3] Material Stack-Up – In addition to the practical aspects of bias and
bias arrangement, device base material stack-up also must be considered for best
thermal performance. A well thought out thermal path solution will improve
overall device reliability, RF performance and power added efficiency. The photo
shows a typical high power amplifier carrier assembly. The material stack-up for
this carrier is shown below. This stack-up is highly recommended for most reliable
performance however, other materials (i.e. eutectic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/possibly used but
only after careful review of material thermal properties, material availability and end application performance requirements.
MMIC, 3mil
Alumina Substrate
Diemat DM6030HK Epoxy, ~1mil
AuSn Eutectic Solder
MOLY Rib, 5mil, Au plated
MOLY Carrier, 25mil
Au plated
Copper Block
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
CMM0015-BD Vd=12.0 V, Id=350 mA
1.00E+03
1.0E+06
1.00E+02
FITS
MTTF (hours)
CMM0015-BD Vd=12.0 V, Id=350 mA
1.0E+07
1.0E+05
1.0E+04
1.00E+01
1.00E+00
1.0E+03
1.00E-01
55
65
75
85
95
105
115
125
55
65
Backplate Temperature (deg C)
75
85
95
105
115
125
Baseplate Temperature (deg C)
CMM0015-BD Vd=12.0 V, Id=350 mA
210
200
Tch (deg C)
190
180
170
160
150
140
130
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0015-BD
September 2009 - Rev 22-Sep-09
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.075 mm (0.003") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK
thermal conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid
getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional
information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a
fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be
used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void
formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of
approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC.
Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to
avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Ordering Information
Part Number for Ordering
CMM0015-BD-000V
PB-CMM0015-BD-0000
Description
RoHS compliant die packed in vacuum release gel packs
CMM0015-BD evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 10 of 10
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.