17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband’s two stage balanced 17.0-35.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 14.0 dB with a noise figure of 2.5 dB across the band. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +6.0 VDC 85 mA +15.0 dBm -65 to +165 ºC -55 to +85 ºC +175 ºC (1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) 3 Output Return Loss (S22) 3 Small Signal Gain (S21) 3 Gain Flatness ( S21) Reverse Isolation (S12) 3 Noise Figure (NF) @ 21.0-35.0 GHz 3 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (V5) Supply Current (Id) Units GHz dB dB dB dB dB dB dBm dBm VDC mA Min. 17.0 8.0 15.0 12.0 25.0 - Typ. 10.0 18.0 14.0 +/-1.5 30.0 2.5 +4.0 2 +16.0 2 +5.0 55 Max. 35.0 3.5 +5.5 65 (2) See plots for additional information. (3) Unless otherwise indicated min/max over 17.0-35.0 GHz and biased at Vd=5V, Id=55mA. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Low Noise Amplifier Measurements (On-Wafer1) XL1001-BD Vd=5.0 V, Id=55 mA 20 30 20 18 10 Reverse Isolation (dB) 19 Gain (dB) 17 16 15 14 13 0 -10 -20 -30 -40 -50 12 -60 11 -70 10 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 -80 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0 35.0 Frequency (GHz) 0 -5 -5 -10 -10 Input Return Loss (dB) Input Return Loss (dB) Frequency (GHz) XL1001-BD Vd=5.0 V, Id=55 mA 0 -15 20 -20 -25 -30 -15 20 -20 -25 -30 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 -40 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0 35.0 Frequency (GHz) Frequency (GHz) XL1001-BD Vd=5.0 V, Id=55 mA 0 0 Output Return Loss (dB) Output Return Loss (dB) XL1001-BD Vd=5.0 V, Id=55 mA -5 -5 -10 -15 -20 -10 -15 -20 -25 -25 -30 17.0 XL1001-BD Vd=5.0 V, Id=55 mA -35 -35 -40 17.0 XL1001-BD Vd=5.0 V, Id=55 mA 19.0 21.0 23.0 25.0 27.0 Frequency (GHz) 29.0 31.0 33.0 35.0 -30 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0 Frequency (GHz) Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application note. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Low Noise Amplifier Measurements (On-Wafer1) (cont.) 20 XL1001-BD, V5=5.0 V, Id=55 mA (~790 devices) 0 XL1001-BD, V5=5.0 V, Id=55 mA (~840 devices) 19 -10 Reverse Isolation (dB) 18 Gain (dB) 17 16 15 14 13 12 -30 -40 -50 11 10 17.0 -20 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 -60 17.0 35.0 19.0 21.0 23.0 Frequency (GHz) Max Mean Max Min XL1001-BD, V5=5.0 V, Id=55 mA (~840 devices) -5 -5 -10 -10 -15 -20 -25 -30 -35 -40 -45 25.0 27.0 29.0 31.0 33.0 35.0 6.5 Median -65 17.0 19.0 21.0 23.0 Mean Max -3sigma 14.0 12.0 Output Power Psat (dBm) 13.0 Noise Figure (dB) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 29.0 31.0 33.0 35.0 Mean Median Mean -3sigma XL1001-BD, V5=5.0 V, Id=55 mA ( ~200 devices) 7.0 6.0 5.0 4.0 3.0 0.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 Freqency (GHz) Frequency (GHz) Median 35.0 8.0 1.0 Max 31.0 9.0 2.0 27.0 29.0 10.0 0.5 25.0 27.0 11.0 1.0 23.0 25.0 Frequency (GHz) 5.5 21.0 33.0 -3sigma -50 XL1001-BD, V5=5.0 V, Id=55 mA (~590 devices) 19.0 Mean -45 6.0 0.0 17.0 Median -40 Frequency (GHz) Max 35.0 -30 -35 -60 23.0 33.0 -25 -55 21.0 31.0 -20 -55 19.0 29.0 -15 -50 -60 17.0 27.0 XL1001-BD, V5=5.0 V, Id=55 mA (~790 devices) 0 Output Return Loss (dB) Input Return Loss (dB) 0 Median 25.0 Frequency (GHz) -3sigma Max Median Mean -3sigma Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application note. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Low Noise Amplifier Measurements (On-Wafer1) (cont.) XL1001-BD, V5=5.0 V, Id=55 mA, ( ~420 Devices) Output u Power P1dB (dBm) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 Frequency (GHz) Max Output Third Order Intercept (dBm) 22 Median Mean -3sigma XL1001-BD, V5=5.0 V, Id=55 mA, Pout=-9 dBm/Tone 21 20 19 18 17 16 15 14 13 12 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 Frequency (GHz) Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application note. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 S-Parameters (On-Wafer1) Typcial S-Parameter Data for XL1001-BD Vd=5.0 V, Id=55 mA Frequency (GHz) 12 0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20 0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35 0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 30 44.0 45.0 S11 (Mag) 0 618 0.618 0.594 0.567 0.491 0.319 0.156 0.101 0.104 0 112 0.112 0.140 0.203 0.257 0.305 0.336 0.356 0.350 0.324 0.259 0.175 0.043 0.090 0.213 0.265 0 267 0.267 0.240 0.195 0.128 0.076 0.043 0.042 0.061 00 9 0.079 0.116 0.127 S11 (Ang) -151 151.82 82 -168.81 174.64 146.60 120.25 119.94 149.48 166.06 -177.97 177 97 -167.26 -169.81 -178.50 166.59 153.58 138.87 119.18 102.90 80.56 60.98 49.78 171.33 144.88 121.09 95 48 95.48 76.74 61.22 47.41 43.98 75.81 104.20 132.74 139 03 139.03 138.77 135.49 S21 (Mag) 0 049 0.049 0.237 0.679 2.263 4.662 6.056 6.321 6.271 6 054 6.054 5.880 5.618 5.398 5.189 5.159 5.138 5.220 5.412 5.689 5.955 6.279 6.373 6.214 5.994 5 600 5.600 5.138 4.613 3.971 3.475 2.907 2.526 2.090 1 0 1.770 1.460 1.220 S21 (Ang) -124 124.68 68 -139.70 -162.76 151.38 95.53 36.25 -19.26 -54.54 -92.42 92 42 -119.31 -149.25 -171.12 163.88 145.61 127.99 106.01 88.13 64.90 45.69 19.67 -2.69 -30.79 -52.66 -80 53 -80.53 -102.38 -123.48 -148.41 -167.34 170.24 152.78 131.76 116 21 116.21 96.80 80.50 S12 (Mag) 0 0028 0.0028 0.0029 0.0028 0.0010 0.0034 0.0079 0.0117 0.0133 0 0146 0.0146 0.0153 0.0167 0.0168 0.0179 0.0193 0.0196 0.0207 0.0224 0.0258 0.0281 0.0321 0.0342 0.0368 0.0354 0 0353 0.0353 0.0347 0.0327 0.0315 0.0288 0.0239 0.0214 0.0199 0 0180 0.0180 0.0146 0.0119 S12 (Ang) -177 177.49 49 158.52 134.38 74.02 -102.61 -156.23 160.34 132.87 105 91 105.91 84.95 62.43 45.16 27.27 9.18 -8.62 -26.27 -40.06 -63.18 -79.48 -103.34 -123.33 -147.60 -168.88 171 36 171.36 151.31 136.03 115.42 98.08 81.80 67.05 51.37 3 13 37.13 16.97 -0.53 S22 (Mag) 0 320 0.320 0.225 0.143 0.050 0.035 0.049 0.079 0.100 0 096 0.096 0.088 0.089 0.098 0.109 0.122 0.142 0.162 0.170 0.180 0.180 0.170 0.156 0.155 0.158 0 163 0.163 0.160 0.152 0.132 0.119 0.101 0.087 0.080 0 089 0.089 0.101 0.121 S22 (Ang) 93 71 93.71 72.37 56.19 55.69 115.61 143.48 152.99 144.00 135 60 135.60 137.37 141.86 145.75 147.61 151.85 147.67 139.25 134.98 128.09 120.13 110.85 108.90 109.38 108.14 103 54 103.54 96.09 91.15 84.05 79.20 85.91 86.76 99.64 10 1 107.17 107.42 119.29 Note [1] S-Parameters – On-Wafer S-Parameters have been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier January 2010 - Rev 10-Jan-10 L1001-BD 0.973 1.374 (0.038) (0.054) 0.775 1.176 (0.031) (0.046) Mechanical Drawing 1.950 (0.077) 2 1.288 (0.051) 3 4 5 1 0.658 (0.026) 6 10 0.0 0.0 0.775 (0.031) 9 8 7 1.176 (0.046) 0.973 (0.038) 2.000 (0.079) 1.374 (0.054) (Note: Engineering designator is 28LN2BA0047) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.115 +/- 0.010 (0.0045 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.416 mg. Bond Pad #1 (RF In) Bond Pad #2 (V1) Bond Pad #3 (V2) Bias Arrangement 2 RF In 3 Bond Pad #4 (V3) Bond Pad #5 (V4) Bond Pad #6 (RF Out) Bond Pad #7 (V8) Bond Pad #8 (V7) Bond Pad #9 (V6) Bond Pad #10 (V5) Bypass Capacitors - See App Note [2] V1* 4 5 1 RF In XL1001-BD 6 10 9 8 RF Out RF Out 7 V5* *V1 or V5 may be used, but both are not required. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com V5 Page 6 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires a single bias voltage. All DC pads (V1 through V8) are tied together on-chip. Even though V1 or V5 are shown as main connections, any of the eight DC pads may be used to bias the device. Bias is nominally V1 or V5=5V, Id=55mA. App Note [2] Bias Arrangement - The DC pad at the top (V1) should be connected to one DC bypass capacitor (~100-200 pf ) and the DC pad at the bottom (V5) should be connected using another DC bypass capacitor (~100-200 pf ). Additional DC bypass capacitance (~0.01 µf ) is also recommended. Capacitance should be as close to the device as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 MTTF Graphs These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. XL1001-BD V5=5.0 V, Id=55 mA 1.0E+14 1.00E+01 1.0E+13 1.00E+00 1.0E+12 1.00E-01 1.0E+11 1.00E-02 1.0E+10 1.00E-03 1.0E+09 1.00E-04 1.0E+08 1.00E-05 1.0E+07 55.0 65.0 75.0 85.0 95.0 105.0 XL1001-BD V5=5.0 V, Id=55 mA 1.00E+02 FITS MTTF (hours) 1.0E+15 115.0 1.00E-06 55.0 125.0 65.0 75.0 Backplate Temperature (deg C) XL1001-BD V5=5.0 V, Id=55 mA 68 105.0 115.0 125.0 140 66 65 130 64 63 Tch (deg C) Rth (deg C/W) 95.0 XL1001-BD V5=5.0 V, Id=55 mA 150 67 62 61 60 59 120 110 100 90 58 80 57 56 70 55 54 55.0 85.0 Backplate Temperature (deg C) 65.0 75.0 85.0 95.0 105.0 Backplate Temperature (deg C) 115.0 125.0 60 55.0 65.0 75.0 85.0 95.0 105.0 115.0 125.0 Backplate Temperature (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 8 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XL1001-BD-000V XL1001-BD-EV1 Description RoHS compliant die packed in vacuum release gel paks XL1001 die evaluation module Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 9 of 9 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.