MIMIX XL1001-BD

17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
14.0 dB Small Signal Gain
2.5 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s two stage balanced 17.0-35.0 GHz
GaAs MMIC low noise amplifier has a small signal gain
of 14.0 dB with a noise figure of 2.5 dB across the
band. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+6.0 VDC
85 mA
+15.0 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11) 3
Output Return Loss (S22) 3
Small Signal Gain (S21) 3
Gain Flatness ( S21)
Reverse Isolation (S12) 3
Noise Figure (NF) @ 21.0-35.0 GHz 3
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (V5)
Supply Current (Id)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
17.0
8.0
15.0
12.0
25.0
-
Typ.
10.0
18.0
14.0
+/-1.5
30.0
2.5
+4.0 2
+16.0 2
+5.0
55
Max.
35.0
3.5
+5.5
65
(2) See plots for additional information.
(3) Unless otherwise indicated min/max over 17.0-35.0 GHz and biased at Vd=5V, Id=55mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
Low Noise Amplifier Measurements (On-Wafer1)
XL1001-BD Vd=5.0 V, Id=55 mA
20
30
20
18
10
Reverse Isolation (dB)
19
Gain (dB)
17
16
15
14
13
0
-10
-20
-30
-40
-50
12
-60
11
-70
10
17.0
19.0
21.0
23.0
25.0
27.0
29.0
31.0
33.0
-80
13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0
35.0
Frequency (GHz)
0
-5
-5
-10
-10
Input Return Loss (dB)
Input Return Loss (dB)
Frequency (GHz)
XL1001-BD Vd=5.0 V, Id=55 mA
0
-15
20
-20
-25
-30
-15
20
-20
-25
-30
19.0
21.0
23.0
25.0
27.0
29.0
31.0
33.0
-40
13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0
35.0
Frequency (GHz)
Frequency (GHz)
XL1001-BD Vd=5.0 V, Id=55 mA
0
0
Output Return Loss (dB)
Output Return Loss (dB)
XL1001-BD Vd=5.0 V, Id=55 mA
-5
-5
-10
-15
-20
-10
-15
-20
-25
-25
-30
17.0
XL1001-BD Vd=5.0 V, Id=55 mA
-35
-35
-40
17.0
XL1001-BD Vd=5.0 V, Id=55 mA
19.0
21.0
23.0
25.0
27.0
Frequency (GHz)
29.0
31.0
33.0
35.0
-30
13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0
Frequency (GHz)
Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application
note.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
Low Noise Amplifier Measurements (On-Wafer1) (cont.)
20
XL1001-BD, V5=5.0 V, Id=55 mA (~790 devices)
0
XL1001-BD, V5=5.0 V, Id=55 mA (~840 devices)
19
-10
Reverse Isolation (dB)
18
Gain (dB)
17
16
15
14
13
12
-30
-40
-50
11
10
17.0
-20
19.0
21.0
23.0
25.0
27.0
29.0
31.0
33.0
-60
17.0
35.0
19.0
21.0
23.0
Frequency (GHz)
Max
Mean
Max
Min
XL1001-BD, V5=5.0 V, Id=55 mA (~840 devices)
-5
-5
-10
-10
-15
-20
-25
-30
-35
-40
-45
25.0
27.0
29.0
31.0
33.0
35.0
6.5
Median
-65
17.0
19.0
21.0
23.0
Mean
Max
-3sigma
14.0
12.0
Output Power Psat (dBm)
13.0
Noise Figure (dB)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
29.0
31.0
33.0
35.0
Mean
Median
Mean
-3sigma
XL1001-BD, V5=5.0 V, Id=55 mA ( ~200 devices)
7.0
6.0
5.0
4.0
3.0
0.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
29.0
31.0
33.0
35.0
37.0
Freqency (GHz)
Frequency (GHz)
Median
35.0
8.0
1.0
Max
31.0
9.0
2.0
27.0
29.0
10.0
0.5
25.0
27.0
11.0
1.0
23.0
25.0
Frequency (GHz)
5.5
21.0
33.0
-3sigma
-50
XL1001-BD, V5=5.0 V, Id=55 mA (~590 devices)
19.0
Mean
-45
6.0
0.0
17.0
Median
-40
Frequency (GHz)
Max
35.0
-30
-35
-60
23.0
33.0
-25
-55
21.0
31.0
-20
-55
19.0
29.0
-15
-50
-60
17.0
27.0
XL1001-BD, V5=5.0 V, Id=55 mA (~790 devices)
0
Output Return Loss (dB)
Input Return Loss (dB)
0
Median
25.0
Frequency (GHz)
-3sigma
Max
Median
Mean
-3sigma
Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application
note.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
Low Noise Amplifier Measurements (On-Wafer1) (cont.)
XL1001-BD, V5=5.0 V, Id=55 mA, ( ~420 Devices)
Output
u
Power P1dB (dBm)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
29.0
31.0
33.0
35.0
37.0
Frequency (GHz)
Max
Output Third Order Intercept (dBm)
22
Median
Mean
-3sigma
XL1001-BD, V5=5.0 V, Id=55 mA, Pout=-9 dBm/Tone
21
20
19
18
17
16
15
14
13
12
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
Frequency (GHz)
Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application
note.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
S-Parameters (On-Wafer1)
Typcial S-Parameter Data for XL1001-BD
Vd=5.0 V, Id=55 mA
Frequency
(GHz)
12 0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20 0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35 0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
30
44.0
45.0
S11
(Mag)
0 618
0.618
0.594
0.567
0.491
0.319
0.156
0.101
0.104
0 112
0.112
0.140
0.203
0.257
0.305
0.336
0.356
0.350
0.324
0.259
0.175
0.043
0.090
0.213
0.265
0 267
0.267
0.240
0.195
0.128
0.076
0.043
0.042
0.061
00 9
0.079
0.116
0.127
S11
(Ang)
-151
151.82
82
-168.81
174.64
146.60
120.25
119.94
149.48
166.06
-177.97
177 97
-167.26
-169.81
-178.50
166.59
153.58
138.87
119.18
102.90
80.56
60.98
49.78
171.33
144.88
121.09
95 48
95.48
76.74
61.22
47.41
43.98
75.81
104.20
132.74
139 03
139.03
138.77
135.49
S21
(Mag)
0 049
0.049
0.237
0.679
2.263
4.662
6.056
6.321
6.271
6 054
6.054
5.880
5.618
5.398
5.189
5.159
5.138
5.220
5.412
5.689
5.955
6.279
6.373
6.214
5.994
5 600
5.600
5.138
4.613
3.971
3.475
2.907
2.526
2.090
1 0
1.770
1.460
1.220
S21
(Ang)
-124
124.68
68
-139.70
-162.76
151.38
95.53
36.25
-19.26
-54.54
-92.42
92 42
-119.31
-149.25
-171.12
163.88
145.61
127.99
106.01
88.13
64.90
45.69
19.67
-2.69
-30.79
-52.66
-80 53
-80.53
-102.38
-123.48
-148.41
-167.34
170.24
152.78
131.76
116 21
116.21
96.80
80.50
S12
(Mag)
0 0028
0.0028
0.0029
0.0028
0.0010
0.0034
0.0079
0.0117
0.0133
0 0146
0.0146
0.0153
0.0167
0.0168
0.0179
0.0193
0.0196
0.0207
0.0224
0.0258
0.0281
0.0321
0.0342
0.0368
0.0354
0 0353
0.0353
0.0347
0.0327
0.0315
0.0288
0.0239
0.0214
0.0199
0 0180
0.0180
0.0146
0.0119
S12
(Ang)
-177
177.49
49
158.52
134.38
74.02
-102.61
-156.23
160.34
132.87
105 91
105.91
84.95
62.43
45.16
27.27
9.18
-8.62
-26.27
-40.06
-63.18
-79.48
-103.34
-123.33
-147.60
-168.88
171 36
171.36
151.31
136.03
115.42
98.08
81.80
67.05
51.37
3 13
37.13
16.97
-0.53
S22
(Mag)
0 320
0.320
0.225
0.143
0.050
0.035
0.049
0.079
0.100
0 096
0.096
0.088
0.089
0.098
0.109
0.122
0.142
0.162
0.170
0.180
0.180
0.170
0.156
0.155
0.158
0 163
0.163
0.160
0.152
0.132
0.119
0.101
0.087
0.080
0 089
0.089
0.101
0.121
S22
(Ang)
93 71
93.71
72.37
56.19
55.69
115.61
143.48
152.99
144.00
135 60
135.60
137.37
141.86
145.75
147.61
151.85
147.67
139.25
134.98
128.09
120.13
110.85
108.90
109.38
108.14
103 54
103.54
96.09
91.15
84.05
79.20
85.91
86.76
99.64
10 1
107.17
107.42
119.29
Note [1] S-Parameters – On-Wafer S-Parameters have been taken using bias conditions as shown. Measurements are referenced 150 um in from RF
In/Out pad edge.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 10-Jan-10
L1001-BD
0.973
1.374
(0.038) (0.054)
0.775
1.176
(0.031) (0.046)
Mechanical Drawing
1.950
(0.077)
2
1.288
(0.051)
3
4
5
1
0.658
(0.026)
6
10
0.0
0.0
0.775
(0.031)
9
8
7
1.176
(0.046)
0.973
(0.038)
2.000
(0.079)
1.374
(0.054)
(Note: Engineering designator is 28LN2BA0047)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.115 +/- 0.010 (0.0045 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.416 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (V1)
Bond Pad #3 (V2)
Bias Arrangement
2
RF In
3
Bond Pad #4 (V3)
Bond Pad #5 (V4)
Bond Pad #6 (RF Out)
Bond Pad #7 (V8)
Bond Pad #8 (V7)
Bond Pad #9 (V6)
Bond Pad #10 (V5)
Bypass Capacitors - See App Note [2]
V1*
4
5
1
RF In
XL1001-BD
6
10
9
8
RF Out
RF Out
7
V5*
*V1 or V5 may be used, but both are not required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
V5
Page 6 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
App Note [1] Biasing - As shown in the bonding diagram, this
device operates using a self-biased architecture and only
requires a single bias voltage. All DC pads (V1 through V8) are
tied together on-chip. Even though V1 or V5 are shown as
main connections, any of the eight DC pads may be used to
bias the device. Bias is nominally V1 or V5=5V, Id=55mA.
App Note [2] Bias Arrangement - The DC pad at the top (V1)
should be connected to one DC bypass capacitor (~100-200 pf )
and the DC pad at the bottom (V5) should be connected using
another DC bypass capacitor (~100-200 pf ). Additional DC
bypass capacitance (~0.01 µf ) is also recommended.
Capacitance should be as close to the device as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
XL1001-BD V5=5.0 V, Id=55 mA
1.0E+14
1.00E+01
1.0E+13
1.00E+00
1.0E+12
1.00E-01
1.0E+11
1.00E-02
1.0E+10
1.00E-03
1.0E+09
1.00E-04
1.0E+08
1.00E-05
1.0E+07
55.0
65.0
75.0
85.0
95.0
105.0
XL1001-BD V5=5.0 V, Id=55 mA
1.00E+02
FITS
MTTF (hours)
1.0E+15
115.0
1.00E-06
55.0
125.0
65.0
75.0
Backplate Temperature (deg C)
XL1001-BD V5=5.0 V, Id=55 mA
68
105.0
115.0
125.0
140
66
65
130
64
63
Tch (deg C)
Rth (deg C/W)
95.0
XL1001-BD V5=5.0 V, Id=55 mA
150
67
62
61
60
59
120
110
100
90
58
80
57
56
70
55
54
55.0
85.0
Backplate Temperature (deg C)
65.0
75.0
85.0
95.0
105.0
Backplate Temperature (deg C)
115.0
125.0
60
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 9
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
L1001-BD
January 2010 - Rev 10-Jan-10
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XL1001-BD-000V
XL1001-BD-EV1
Description
RoHS compliant die packed in vacuum release gel paks
XL1001 die evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.