12 12NS(R) Naina Semiconductor emiconductor Ltd. Standard Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM 2 It Parameters Maximum avg. forward current @ TE = O 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum peak repetitive surge current 2 rep) for 5 to Maximum I t rating (non-rep) 10 msec Values Units 12 A 1.2 V 250 A 60 A 250 A sec 2 DO-203AA 203AA (DO-4) (DO Electrical Ratings (TE = 250C, unless otherwise noted) Type number 12NS(R) Voltage Code VRRM, Maximum repetitive peak reverse voltage (V) VR(RMS), Maximum RMS reverse voltage (V) VR, Maximum DC blocking voltage (V) Recommended RMS working voltage (V) 10 100 70 100 40 20 200 140 200 80 40 400 280 400 160 60 600 420 600 240 80 800 560 800 320 100 1000 700 1000 400 120 1200 840 1200 480 140 1400 980 1400 560 160 1600 1120 1600 640 IR(AV), Maximum avg. reverse leakage current (µA) 100 Naina Semiconductor emiconductor Ltd. 12 12NS(R) Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Symbol Rth(JC) TJ Tstg W Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated lubricated threads) Approximate allowable weight ALL DIMENSIONS IN MM Values 2 -65 65 to 150 -65 65 to 150 0.14 (min) - 0.17 (max) 7 Units C/W O O O C C g