8 804DCR Naina Semiconductor emiconductor Ltd. Phase Control Thyristors (Capsule Type) Features • • • • Metal case with ceramic insulator High current rating Bifacial cooled Center gate trigger Applications • • • DC motor controls AC controllers DC power supplies TO-200A 200AC (B-PUK) Voltage Ratings Type number 804DCR Voltage Code VDRM/VRRM, Maximum Repetitive peak & off-state state voltage V VRSM, Maximum nonrepetitive peak voltage V 40 60 400 600 500 700 80 100 800 1000 900 1100 120 1200 1300 140 160 1400 1600 1500 1700 IDRM/IRRM, Maximum at TJ = TJ maximum mA 50 Electrical Ratings (TJ = 250C, unless otherwise specified specified) Parameters Symbol Values Units IT(AV) IT(RMS) 800 1256 A A ITSM 12000 A 2 It VRRM, VDRM 218 200 to 1600 As V VTM 1.7 V Maximum holding current @ TJ = 25 C 0 Maximum latching current @TJ = 25 C IH IL 300 800 mA mA Threshold voltage Slope resistance VT0 rT 0.99 0.75 V mΩ O 0 Maximum on-state average current 180 sinusoidal conduction @ TC = 55 C Maximum RMS on-state current Maximum peak, one cycle non-repetitive repetitive surge current 2 Maximum I t for fusing @ t = 10ms Maximum repetitive peak on and off-state state voltage range 0 Maximum peak on-state voltage (TJ = 125 C, Ipeak = 1100A) 0 2 Switching Ratings (TJ = 250C, unless otherwise specified) Parameters Rate of rise of turn-on current @ TJ = TJ max, anode voltage ≤ 80% VDRM Typical turn-on time Typical turn-off time 1 Symbol Values Units di/dt td 200 2 12 A/µs tq 2 200 µs D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com 8 804DCR Naina Semiconductor emiconductor Ltd. Blocking Parameters (TJ = 250C, unless otherwise specified) Parameters Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated VDRM Maxmimum peak reverse & off-state state leakage current @ TJ = TJ max, rated VDRM/VRRM applied Symbol Values Units dV/dt 500 V/µs IRRM, IDRM 50 mA Symbol Values Units IGT VGT 200 20 3.0 mA V Symbol TJ Values - 40 to +125 Units 0 C TStg - 40 to +125 Triggering Parameters (TJ = 250C, unless otherwise specified) Parameters DC gate current to trigger DC gate voltage to trigger Thermal and Mechanical Specifications (TJ = 250C, unless otherwise specified) Parameters Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Mounting torque Approximate weight Rth(JC) F 0.045 0. 12 .. 14 WT 260 0 C 0 C/W kN g ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com