THYRISTOR MODULE 222A / 1200 to 1600V PAT10012 PAT10016 PAH10012 PAH10016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING φ TYPICAL APPLICATIONS * AC phase control * AC switch PAT PAH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Approx Net Weight:155g Symbol VDRM VDSM Parameter PAT/PAH10016 1200 1300 1600 1700 Conditions RMS On-State Current IT(RMS) Surge On-State Current IFSM I Squared t Grade PAT/PAH10012 I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor 50Hz Half Sine Wave condition Tc=76°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs • Unit V Max Rated Value Unit 222 A 2000 A 20000 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.4 to 3.5 N •m M5 Screw 2.4 to 2.8 Electrical • Thermal Characteristics Characteristics Symbol Peak Off-State Current Peak On-State Voltage IDM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1: Value Per Module dv/dt VDM= VDRM, Tj=125°C ITM= 300A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 40 1.38 200 100 50 4 2.5 2 0.25 VD=2/3VDRM Tj=125°C 500 Test Conditions ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound tq Unit mA V mA V V V/µs 100 µs 6 2 4 100 50 µs µs µs mA 0.175 0.1 °C/W PAT/PAH1001x OUTLINE DRAWING (Dimensions in mm) φ