NIEC PAH10016

THYRISTOR MODULE
222A / 1200 to 1600V
PAT10012
PAT10016
PAH10012
PAH10016
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
OUTLINE DRAWING
φ
TYPICAL APPLICATIONS
* AC phase control
* AC switch
PAT
PAH
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Approx Net Weight:155g
Symbol
VDRM
VDSM
Parameter
PAT/PAH10016
1200
1300
1600
1700
Conditions
RMS On-State Current
IT(RMS)
Surge On-State Current
IFSM
I Squared t
Grade
PAT/PAH10012
I2t
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
50Hz Half Sine Wave condition
Tc=76°C
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=200mA, diG/dt=0.2A/µs
•
Unit
V
Max Rated
Value
Unit
222
A
2000
A
20000
A2s
100
A/µs
5
W
1
W
2
A
10
V
5
V
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M6 Screw
2.4 to 3.5
N •m
M5 Screw
2.4 to 2.8
Electrical • Thermal Characteristics
Characteristics
Symbol
Peak Off-State Current
Peak On-State Voltage
IDM
VTM
Gate Current to Trigger
IGT
Gate Voltage to Trigger
VGT
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance *1
Value Per 1Arm
*1: Value Per Module
dv/dt
VDM= VDRM, Tj=125°C
ITM= 300A, Tj=25°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
VD=2/3VDRM Tj=125°C
Maximum Value.
Min. Typ. Max.
40
1.38
200
100
50
4
2.5
2
0.25
VD=2/3VDRM Tj=125°C
500
Test Conditions
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
Tj=25°C, ITM=IT(RMS)
VD=100V, IG=200mA
td
diG/dt=0.2A/µs
tr
IL
Tj=25°C
IH
Tj=25°C
Rth(j-c) Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
tq
Unit
mA
V
mA
V
V
V/µs
100
µs
6
2
4
100
50
µs
µs
µs
mA
0.175
0.1
°C/W
PAT/PAH1001x OUTLINE DRAWING (Dimensions in mm)
φ