RECTRON BAT86 SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON PLANAR SCHOTTKY BARRIER DIODE FEATURES * Fast Switching Device(TRR<4.0nS) * DO-34 Package (JEDEC) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable DO-34 .022 (0.56) DIA. .018 (0.46) 1.02 (26.0) MIN. .165 (4.2) MAX. .079 (2.0) MAX. DIA. 1.02 (26.0) MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) UNITS SYMBOL BAT86 VR 50 V IF 200 mAmps Repetitive Peak Forward Current tp<1s:δ<0.5 IFRM 500 AmpsR Surge Forward Current @ tp<10ms IFSM 5 mAmps TJ 125 O C TSTG -65 to + 150 O C RATINGS Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ T A =25 OC Junction Temperature Storage Temperature Range o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Reverse breakdown voltage (IR=10µA) Reverse voltage leakage current (VR=40V) SYMBOL MIN. TYP. MAX. UNITS V(BR)R 50 - - V IR - - 5.0 µA - 0.30 - 0.38 - 0.45 - 0.60 (IF=0.1mA) (IF=1mA) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) VF - (IF=30mA) (IF=100mA) V - 0.90 Diode capacitance (VR=1,f=1MHz) CD - - 8.0 pF Reveres recovery time (IF=IR=10mA,RL=100Ω,IR=1mA) trr - - 4.0 nS 2006-3