RHOMBUS-IND T

ISDN S Interface Transformer
REINFORCED INSULATION PER EN 41003/EN 60950
Turns Ratio ( + 5% )
PARAMETER
1CT:2
MIN.
Open Circuit Inductance
MAX.
UNITS
22
mHy
Leakage Inductance
15
µHy
Interwinding Capacitance (CW/W)
60
pF
Primary DC Resistance
3.0
ohms
Secondary DC Resistance
5.5
ohms
3.0Kv
Isolation (HI-POT)
SCHEMATIC
DIAGRAM
P ri.
S ec.
V RMS
TEST CONDITIONS:
Oscillation Voltage = 700mV
Oscillation Frequency = 10.0 KHz
Inductance measured on Primary winding. Pins 4-7, short 9-6.
MEETS THE PULSE WAVEFORM
TEMPLATE OF CCITT I.430.
Primary is Line Side
Unbalanced current at TE: ∆ Idc = 5 mA max.
Longitudinal Conversion Loss - 10KHz to 300 KHz: 60dB min.
PHYSICAL DIMENSIONS
inches (mm)
Unused Pins Omitted
RHOMBUS P/N:
Dot indicates pin # 1
CUST P/N:
DATE: 07/02/96
Rhombus
Industries Inc.
Transformers & Magnetic Products
www.rhombus-ind.com
T-10459
NAME:
SHEET: 1 OF 1
15801 Chemical Lane,
Huntington Beach, CA 92649-1595
Phone: (714) 898-0960 FAX: (714) 896-0971