RHOMBUS-IND T

ISDN S-Interface Dual Transformer
Compatible With AT&T T7256
Turns Ratio Pins 1-4:16-13 & 5-8:12-9
1:2.5 & 1:2.5
SCHEMATIC DIAGRAM
PRI
PARAMETER
Open Circuit Inductance
1-4 (1)
5-8 (2)
MIN.
MAX.
22
mHy
Leakage Inductance
1-4 (1) Short 16-13
5-8 (2) Short 12-9
4
4
µHy
µHy
Interwinding Capacitance (CW/W)
1-4 (1) & 16-13 (3)
5-8 (2) & 12-9 (4)
100
100
pF
pF
Distributed Parallel Capacitance
1-4 (1)
5-8 (2)
180
100
pF
pF
Primary DC Resistance: 1-4 (1) ; 5-8 (2)
2.30
ohms
Secondary DC Resistance:16-13 ;12-9
5.80
ohms
Isolation (HI-POT)
SE C
UNITS
2400
VRMS
Flammability: Materials used in the
production of these units are UL94-VO
and meet requirements of IEC 695-2-2
needle flame test.
MEETS THE PULSE WAVEFORM TEMPLATE OF CCITT I.430.
OPrimary is Line Side
OUnbalanced current at TE: ∆ Idc = 1 mAmax.
OLongitudinal Conversion Loss - 10KHz
to 300 KHz: 60dB min.
Parts shipped in anti-static
trays. 40 pieces per tray
Package Dimensions in Inches (mm)
Oscillation Voltage = 500mV
Oscillation Frequency = 10.0 KHz
1. Connect 2 & 3
2. Connect 6 & 7
Rhombus
Industries Inc.
Transformers & Magnetic Products
RHOMBUS P/N: T-13506
CUST P/N:
DATE: 3/24/94
www.rhombus-ind.com
NAME:
SHEET:
1 OF 1
15801 Chemical Lane,
Huntington Beach, CA 92649-1595
Phone: (714) 898-0960 FAX: (714) 896-0971