http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A Mar. 2008 High Voltage Schottky Barrier Rectifier General Description Package FMEN-230A is a High Voltage (100V) Schottky Barrier TO220F(3Pin) Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters ●AC adapter ●High frequency rectification circuit Key Specifications Features ●High Voltage 100Vguarantee ●Steady operation is possible even at the high temperature by the low leakage current. ●Super-high speed & low noise switching. ●Low forward voltage drop. Symbol Unit Rating VRM V 100 VF V 0.85 IF(AV) A 30 Conditions IF=15A Typical Characteristics FMEN-230A IF-VF Characteristics FMEN-230A VR-IR Characteristics 100 1.0E-01 150°C 10 1.0E-02 1 1.0E-03 125°C IR (A) IF (A) 100°C 150°C 0.1 1.0E-04 125°C 0.01 100°C 25°C 1.0E-05 25°C 0.001 1.0E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF (V) 1.1 1.2 0 20 40 60 VR (V) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 80 100 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A Mar. 2008 High Voltage Schottky Barrier Rectifier Absolute maximum ratings No. Parameter Symbol Unit Rating 1 Transient Peak Reverse Voltage VRSM V 100 2 Peak Reverse Voltage VRM V 100 3 Average Forward Current IF(AV) A 30 4 Peak Surge Forward Current IFSM A 150 5 I2t Limiting Value I2t A2s 112.5 6 Junction Temperature Tj °C -40 to +150 7 Storage Temperature Tstg °C -40 to +150 Conditions Half sinewave, one shot 1msec<t<10msec No.1, 2, 4&5 show ratings per one chip. Electrical characteristics (Ta=25°C, unless otherwise specified) No. Parameter Symbol Unit Rating Conditions 1 Forward Voltage Drop VF V 0.85 max. IF=15A 2 Reverse Leakage Current IR uA 300 max. VR=VRM H•IR mA 150 max. VR=VRM, Tj=150°C Rth(j-c) °C/W 4.0 max. 3 4 Reverse Leakage Current Under High Temperature Thermal Resistance Between Junction and case No.1, 2&3 show characteristics per one chip. The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A Mar. 2008 High Voltage Schottky Barrier Rectifier Characteristics Forward Power Dissipation PF (W) Forward Power Dissipation 35 Tj=150℃ 30 t t/T=1/6 T 25 20 t/T=1/3,sinewave 15 t/T=1/2 10 DC 5 0 0 10 20 30 Average Forward Current IF(AV) (A) Reverse Power Dissipation PR (W) Reverse Power Dissipation 25 Tj=150℃ 20 t 1-t/T=5/6 T 15 1-t/T=2/3 10 1-t/T=1/2 5 sinewave 0 0 20 40 60 80 100 Reverse Voltage VR (V) Average Forward Current IF(AV) (A) Current Derating VR=150V 30 Tj=150℃ t sinewave T 20 t/T=1/2 DC t/T=1/3 10 t/T=1/6 0 0 50 100 Case temperature Tc (°C) Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 150 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A Mar. 2008 High Voltage Schottky Barrier Rectifier Outline drawings, mm ① ② ③ tolerance:±0.2 Connection Diagram 1 2 3 Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4