SANKEN SJPZ-E33

SANKEN ELECTRIC CO., LTD.
SJPZ-E33
1. Scope
The present specifications shall apply to an SJPZ-E33.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
Over Voltage Absorption
3. Flammability
UL94V-0 (Equivalent)
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SANKEN ELECTRIC CO., LTD.
SJPZ-E33
4. Absolute maximum ratings
No.
Item
Symbol
Unit
Rating
Conditions
P
W
1
Refer to Derating of 6
PRSM
W
95
Single Square Wave
1
Permissible Power loss
2
Transient Peak Reverse Power
3
Junction Temperature
Tj
°C
-55~+150
―
4
Storage Temperature
Tstg
°C
-55~+150
―
5. Electrical characteristics(Ta=25℃ ,unless otherwise specified)
No.
Item
Symbol
Unit
Value
Conditions
1
Reverse Breakdown Voltage
VZ
V
31.0∼35.0
IZ=1mA
2
Reverse Leakage Current
IR
uA
10 max.
VR=25V
3
Temperature Coefficient
Breakdown Voltage
γz
mV/°C
28 typ.
IZ=1mA
4
Equivalent Resistance of
Breakdown Region
Rz
Ω
10 typ.
Iz=10mA∼20mA
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SANKEN ELECTRIC CO., LTD.
SJPZ-E33
6. Derating
Permissible Power Loss
周囲温度-許容電力損失
Permissible Power Loss-Ambient Temperature
許容電力損失 P[W]
Permissible Power Loss P[W]
1.2
1.0
ガラスエポキシ基板実装(銅箔3 □)
Glass-epoxy Substrate (Solder Land 3 □)
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
周囲温度 Ta[℃]
Ambient Temperature Ta[℃]
140
160
7. Transient Peak Reverse Power Rating
ピーク逆耐電力-パルス幅
Transient Peak Reverse Power-Pulse Width
ピーク逆耐電力 PRSM [W]
Transient Peak Reverse Power PRSM [W]
1000
100
10
1
100u
1m
10m
100m
パルス幅 PW [sec]
Pulse Width PW [sec]
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SANKEN ELECTRIC CO., LTD.
SJPZ-E33
+0.1
2.15 -0.2
8. Package information
8-1Package type, physical dimensions
2.0 min.
Dimensions in ㎜
8-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
8-3Marking
① Polarity marking (Cathode band)
② Type number
SJPZ-E as abbreviated of ZE.
②
③
③ Vz Class number
33V as abbreviated of 33.
④
①
060508
④ Lot number
Example) 6508
6:Last number of Year
5: Month from 1 to 9 for Jan. to Sep.O for Oct.,N for Nov.,D for Dec.
08:Day.
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