SAVANTIC 2SA1988

SavantIC Semiconductor
Product Specification
2SA1988
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·High collector-emitter voltage
APPLICATIONS
·For audio frequency power amplifier
and industrial use
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA1988
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
CONDITIONS
TYP.
MAX
UNIT
IC=-5A; IB=-0.5A
-0.6
-2.0
V
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.3
-2.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
µA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
70
hFE-2
DC current gain
IC=-3.5A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
270
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
40
MHz
2
MIN
200
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SA1988
SavantIC Semiconductor
Product Specification
2SA1988
Silicon PNP Power Transistors
4