SECOS SM130MH

SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES








Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
Low profile surface mounted application.
in order to optimize board space.
Low power loss and low forward voltage drop
High surge, high current capability, and high efficiency.
Fast switching for high efficiency.
Guard-ring for overvoltage protection.
Ultra high-speed switching
Silicon epitaxial planar chip, metal silicon junction.
SOD-123MH
A
B
F
D
C
PACKAGING INFORMATION




E
Small plastic SMD package.
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0110 g (Approximately)
REF.

A
B
C

Cathode
Anode
Millimeter
Min.
Max.
3.30
3.70
1.50
1.90
0.60
1.00
E
REF.
D
E
F
Millimeter
Min.
Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING CODE
Part Number
SM120MH
SM130MH
SM140MH
SM150MH
Marking Code
12
13
14
15
Part Number
SM160MH
SM180MH
SM1100MH
Marking Code
16
18
10
MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
SYMBOL
SM
120
MH
SM
130
MH
SM
140
MH
SM
150
MH
SM
160
MH
SM
180
MH
SM
1100
MH
UNITS
Recurrent Peak
Reverse Voltage (Max.)
VRRM
20
30
40
50
60
80
100
V
RMS Voltage (Max.)
VRMS
14
21
28
35
42
56
70
V
Reverse Voltage (Max.)
VR
20
30
40
50
60
80
100
V
Forward Voltage (Max.)
VF
Forward
Rectified Current (Max.)
IO
1.0
A
See Fig.1
IFSM
25
A
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
Peak Forward Surge Current
Reverse Current (Max.)
Thermal Resistance (Typ.)
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
http://www.SeCoSGmbH.com/
16-Jul-2010 Rev. B
0.50
0.70
0.85
V
0.5
IR
mA
10
RJA
98
°C/W
CJ
120
pF
TSTG, TJ
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
TESTING CONDITIONS
VR=VRRM, Ta=25°C
VR=VRRM, Ta=125°C
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
°C
Any changes of specification will not be informed individually.
Page 1 of 2
SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0M
H~
SM
14
12
0M
H
16
0M
3.0
H~
SM
0.2
SM
0.4
10
1.0
H
-M
SM
15
0M
0.6
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
H
50
1.0
MH
010
M1
~S
MH
015
H
-M
SM
40
M1
~S
MH
012
SM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
M
0-
00
11
SM
H~
18
SM
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
25
.01
20
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
15
8.3ms Single Half
TJ=25 C
Sine Wave
10
JEDEC method
5
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
TJ=75 C
.1
TJ=25 C
50
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
http://www.SeCoSGmbH.com/
16-Jul-2010 Rev. B
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Any changes of specification will not be informed individually.
Page 2 of 2