SUF11MH~SUF18MH 50 ~ 600 V 1.0 Amp Surface Mount Super Fast Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant DESCRIPTIONS z z z z z z Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Small plastic SMD package. High surge and high current capability. Superfast recovery time for switching mode application. Glass-passivated chip junction. A PACKAGING INFORMATION z z z SOD-123MH B Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (approximately) F D C MARKING CODE Part Number SUF11MH SUF12MH SUF14MH E Marking Code S1 S2 S4 Part Number SUF16MH SUF18MH Marking Code S6 S8 REF. A B C Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00 E REF. D E F Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.) ELECTRICAL CHARACTERISTICS AND RATINGS (TA = 25°C unless otherwise specified.) PARAMETERS SYMBOL PART NUMBERS SUF11 MH SUF12 MH SUF14 MH SUF16 MH SUF18 MH UNITS TESTING CONDITIONS Recurrent Peak Reverse Voltage (Max.) VRRM 50 100 200 400 600 V RMS Voltage (Max.) VRMS 35 70 140 280 420 V Reverse Voltage (Max.) VR 50 100 200 400 600 V Forward Voltage (Max.) VF 1.25 1.70 V IF = 1A Average Forward Rectified Current (Max.) IO A Ambient temperature = 50°C A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Peak Forward Surge Current IFSM 0.95 1.0 25 5.0 DC Reverse Current at Rated DC Blocking Voltage (Max.) IR Reverse Recovery Time tRR 35 nS Junction – Ambient Thermal Resistance (Typ.) RθJA 42 °C/W CJ 10 pF TSTG, TJ -65 ~ 175, -55 to 150 °C Junction Capacitance (Typ.) Storage and Operating Temperature Range 01-December-2008 Rev. A 100 μA VR=VRRM, TA=25°C VR=VRRM, TA=100°C f=1MHz and applied 4V DC reverse voltage Page 1 of 2 SUF11MH~SUF18MH 50 ~ 600 V 1.0 Amp Surface Mount Super Fast Rectifiers Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS F1 6M H 11 -M H~ SU 1.0 SU F1 8M H SU SU F .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) PEAK FORWARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) F1 4-M H AVERAGE FORWARD CURRENT,(A) 10 25 20 15 8.3ms Single Half TJ=25 C Sine Wave 10 JEDEC method 5 0 1 5 (+) 50 10 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 JUNCTION CAPACITANCE,(pF) trr | | | | | | | | +0.5A 0 -0.25A -1.0A 60 50 40 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 01-December-2008 Rev. A Page 2 of 2