BCU81-SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 2 .5 1 .0 4 .2 5 m a x . Ideal for high current driver applications requiring low loss devices 0 .4 0 0 .4 0 0 .5 0 FEATURES • LOW VCE(SAT) • HIGH CURRENT • HIGH ENERGY RATING 1 .5 3 .0 APPLICATIONS - + * • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING SOT89 EFFICIENT LOW LOSS DEVICES ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base voltage 30V VCEO Collector – Emitter voltage (IB = 0) 10V VEBO Emitter – Base voltage 6V IC Collector current 3A ICP Collector Current (Pulse) 5A PC Collector Dissipation 500mW (Mounted on Ceramic Board (250mm2 x 0.8mm) 1.3W Tj Junction Temperature 150°C Tstg Storage Temperature –55 to 150°C Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.9/98 BCU81-SMD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO Collector – Emitter Base Breakdown Voltage V(BR)CBO Collector – Base Breakdown Voltage Test Conditions Typ. Max. Unit. IC = 1mA RBE = 0 10 V IC = 10mA IE = 0 30 V IE = 10mA IE = 0 6 V V(BR)EBO Emitter Base Breakdown Voltage ICBO IEBO Collector Cut–Off Current IC = 0 VCB = 20V Emitter Cut–Off Current VBE = 4V hFE fT DC Current Gain VCE = 2V Transition frequency VCE = 10V Cob Output Capacitance VCB = 10V Magnatec. Min. IC = 0 IC = 3A IC = 50mA f = 1MHz Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk 100 100 140 30 nA nA 210 — 200 MHz pF Prelim.9/98 BCU81-SMD Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.9/98 BCU81-SMD Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.9/98