TetraFET D5029UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C (2 pls) 2 G (typ) 3 1 H P (2 pls) A D 4 5 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 50V – 175MHz PUSH–PULL F I FEATURES N O M J • SIMPLIFIED AMPLIFIER DESIGN K DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 • SUITABLE FOR BROAD BAND APPLICATIONS PIN 2 PIN 4 DRAIN 1 GATE 2 • LOW Crss • SIMPLE BIAS CIRCUITS DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.61R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage* Gate – Source Breakdown Voltage* Drain Current* Storage Temperature Maximum Operating Junction Temperature 438W 125V ±20V 21A –65 to 150°C 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 4149 Issue 2 D5029UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current ID = 100mA VDS = 50V VGS = 0 7 mA 1 µA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 3.5A ID = 10mA VDS = VGS VGS(th)match Gate Threshold Voltage Matching Between Sides V VGS = 0 125 1 mhos 5.6 0.1 V TOTAL DEVICE GPS Common Source Power Gain PO = 350W η Drain Efficiency VDS = 50V VSWR Load Mismatch Tolerance f = 175MHz IDQ = 1.4A 13 dB 50 % 20:1 — PER SIDE Ciss Input Capacitance VDS = 50V VGS = –5V f = 1MHz 420 pF Coss Output Capacitance VDS = 50V VGS = 0 f = 1MHz 175 pF Crss Reverse Transfer Capacitance VDS = 50V VGS = 0 f = 1MHz 10.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 0.4°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 4149 Issue 2 D5029UK 70 20 18 60 16 50 % 12 Efficiency Gain dB 14 10 8 Vds = 50V Idq = 1.4A f =175 MHz 6 4 40 30 Vds = 50V Idq = 1.4A f =175 MHz 20 10 2 0 0 0 50 100 150 200 250 300 350 400 0 450 50 100 150 200 250 300 350 400 450 Pout W Pout W Figure 1 – Gain vs. Output Power. Figure 2 – Efficiency vs. Output Power. -10 -20 IMD3 dBc D5029UK OPTIMUM SOURCE AND LOAD IMPEDANCE @ 350W / 50V f1 = 175.0 MHz f2 = 175.1 MHz Vds = 50V Idq = 1.4A -15 -25 -30 -35 -40 0 50 100 150 200 250 300 350 Frequency MHz ZS Ω ZL Ω 175 1.0 + j1.2 2.6 + j1.3 400 Pout W PEP Figure 3 – IMD vs. Output Power. Typical S Parameters ! # Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 VDS = 50V, IDQ = 1.4A MHZ S MA R 50 S11 mag 0.83 0.89 0.93 0.95 0.97 0.98 0.98 0.98 0.99 0.99 0.99 0.99 S21 ang -165.3 -170.0 -173.2 -175.7 -177.8 -179.7 178.7 177.3 175.9 174.7 173.5 172.3 mag 20.29 8.28 4.42 2.71 1.82 1.30 0.97 0.76 0.61 0.50 0.42 0.35 S12 ang 69.4 48.6 35.6 27.2 21.3 17.0 13.8 11.4 9.5 8.1 7.1 6.5 mag 0.007 0.004 0.003 0.005 0.008 0.011 0.014 0.017 0.020 0.023 0.026 0.028 S22 ang -9.2 -6.0 50.0 82.4 88.8 90.0 89.6 88.9 87.9 86.9 85.9 84.9 mag 0.63 0.78 0.86 0.91 0.94 0.95 0.97 0.97 0.98 0.98 0.98 0.99 ang -150.7 -156.6 -162.0 -166.2 -169.4 -171.9 -174.0 -175.7 -177.3 -178.6 -179.8 179.0 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 4149 Issue 2 D5029UK 50 M1 RF in M1 6-60pF 0.1u 5000pF L2 0.47u Gate-Bias RF out 6-60pF D5029UK Drain-Bias L1 47pF 180pF 1K D5029UK 0.1u 1nF 1.5K 1000pF 5000pF 1nF 0.1u M1 M1 TX1 TX2 50 TX1 9:1 transformer. 3 turns of 062-25 semi-rigid coax around 75-26 powdered iron core TX2 4:1 transformer. 2 turns of 090-25 semi-rigid coax around 100-8 powedered iron core L1 10 turns 16 awg enamelled wire, 5mm internal diameter L2 0.5 turns 16 awg enamelled wire on A1 x 1 2-hole core M1 microstrip line, 20mm long, 1mm wide on 0.062in thick G10 substrate D5029UK 175MHz TEST FIXTURE Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 4149 Issue 2