SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision current sense reistors. The device does not need heat sinking and is housed in an encapsulated sealed enclosure. The drive input signals are TTL compatable. (Tj=250C UNLESS OTHERWISE SPECIFIED) ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE PARAMETER SYMBOL MIN TYP MAX UNIT MOSFET SPECIFICATIONS (Per Device) Drain-to-Source Breakdown Voltage Continuos Drain Current BVDSS TC = 25 OC ID 100 - - V - - 7.5 A O TC = 100 C 4.8 Pulsed Drain Current, Pulse Width limited to 1 msec IDM - - Zero Gate Voltage Drain Current ICSS - - VDS = 80V, VGS=0V Ti=25oC 50 A 1 uA 250 uA 0.019 0.023 Ω 0.035 .043 VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, O Tj = 25 C RDSon - O Tj = 150 C ID= 7.5A, VGS = 10V, o Maximum Thermal Resistance RθJC - - 35 Maximum operating Junction Temperature Tjmax -40 - 150 o Maximum Storage Junction Temperature Tjmax -55 - 150 o Rise Time tr 30 ns Fall Time tf 30 ns • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 1 C/W C C SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary DIODES CHARACTERISTICS (Per Device) Continuous Source Current, TC = 90 OC IS - VSD - Diode Reverse Recovery Time (IS=7.5A, di/dt=100 A/µs) trr - Reverse Recovery Charge Qrr Diode Forward Voltage, IS = 4A, Tj = 25 OC - - 7.5 A 1.0 V 55 nsec 90 nC 15 V (Isd=7.5A, dIsd/dt=100A/us) Gate Driver Supply Voltage VCC 10 12 Supply Input Current (Without PWM Switching) 2 Input Drive, On Current 1 mA 10 uA - uA Input Drive, Off Current Ith Boost Capacitor Value Cboost .33 uF Boost Charging Resistor Rboost 10 Ohm • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 2 SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary Under Voltage Lockout VCCUV+ VCCUV- 8.9 9.8 7.4 8.2 9.0 680 820 100 170 150 220 50 90 400 520 650 nsec - .0165 - Ohm Input-to-Output Turn On Delay tond Output Turn On Rise Time tr - toffd - Input-to-Output Turn Off Delay Output Turn Off Fall Time V 8 nsec tf @ VCC=50V, ID=4A, TC = 25 Dead Time DC Bus Current Sensor Shunt Resistor Value - Average Switching Current vs. Frequency for each bridge, with both bridges switching, at Tc=100C, Vin=50Vdc. Typical Current vs Freq. Current (A) 10 1 0.1 0 10 20 30 40 50 60 70 80 90 100 110 Freq. (Khz) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 3 SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 4 SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary PIN OUT Pin # Name Description 1 (16) +DC_BUS Positive Power Supply Bus 2 (15) DRV_A Logic Level Drive for Side A 3 (14) OUT_B Output of Bridge, Side B 4 (13) +15_VCC Bias Supply Voltage for Internal Drivers 5 (12) ISEN Current Sense Resistor Output 6 (11) DRV_B Logic level Drive for Side B 7 (10) OUT_A Output of Bridge, Side A 8 (9) GND Drive and Power Ground Return () Pin numbers in parenthasis are for the second H-Bridge DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 5