TI LM185WG-1.2-QV

LM185-1.2QML
LM185-1.2QML Micropower Voltage Reference Diode
Literature Number: SNVS384
LM185-1.2QML
Micropower Voltage Reference Diode
General Description
The LM185-1.2 is a micropower 2-terminal band-gap voltage
regulator diodes. Operating over a 10µA to 20mA current
range, it features exceptionally low dynamic impedance and
good temperature stability. On-chip trimming is used to provide tight voltage tolerance. Since the LM185-1.2 band-gap
reference uses only transistors and resistors, low noise and
good long term stability result.
Careful design of the LM185-1.2 has made the device exceptionally tolerant of capacitive loading, making it easy to
use in almost any reference application. The wide dynamic
operating range allows its use with widely varying supplies
with excellent regulation.
The extremely low power drain of the LM185-1.2 makes it
useful for micropower circuitry. This voltage reference can be
used to make portable meters, regulators or general purpose
analog circuitry with battery life approaching shelf life.
Further, the wide operating current allows it to replace older
references with a tighter tolerance part.
Features
n
n
n
n
Operating current of 10µA to 20mA
1Ω maximum dynamic impedance (typical)
Low temperature coefficient
Low voltage reference - 1.235V
Ordering Information
NS Part Number
JAN Part Number
NS Package Number
LM185E-1.2/883
5962–87594012A
E20A
20LD LCC
LM185H-1.2-SMD
5962–8759401XA
H02A
2 LD T0–46
LM185H-1.2-QV
5962–8759401VXA
H02A
2 LD T0–46
LM185WG-1.2/883
5962–8759401YA
WG10A
LM185BYH-1.2-SMD
5962–8759405XA
H02A
LM185WG-1.2-QV
5962–8759401VYA
WG10A
Package Description
10LD Ceramic SOIC
2 LD T0–46
10LD Ceramic SOIC
Connection Diagrams
Hermetic Leadless Chip Carrier (E)
TO-46
Metal Can Package (H)
20156106
20156135
See NS Package Number E20A
© 2005 National Semiconductor Corporation
DS201561
Bottom View
See NS Package Number H02A
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LM185-1.2QML Micropower Voltage Reference Diode
October 2005
LM185-1.2QML
Connection Diagrams
(Continued)
Ceramic SOIC (WG)
20156134
See NS Package Number WG10A
Schematic Diagram
20156107
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2
LM185-1.2QML
Absolute Maximum Ratings (Note 1)
Reverse Current
30mA
Forward Current
10mA
−55˚C ≤ TA ≤ +125˚C
Operating Temperature Range
Maximum Junction Temperature (TJmax) (Note 2)
+150˚C
−55˚C ≤ TA ≤ +150˚C
Storage Temperature
Lead Temperature (Soldering 10 Seconds)
Ceramic SOIC
260˚C
TO-46 package
300˚C
20LD LCC package
300˚C
Thermal Resistance
θJA
Metal Can (Still Air)
300˚C/W
Metal Can (500LF / Min Air Flow)
139˚C/W
20LD LCC (Still Air)
100˚C/W
20LD LCC (500LF / Min Air Flow)
73˚C/W
Ceramic SOIC (Still Air)
194˚C/W
Ceramic SOIC (500LF / Min Air Flow)
128˚C/W
θJC
Metal Can
57˚C/W
20LD LCC
25˚C/W
Ceramic SOIC
23˚C/W
Package Weight (Typical)
Metal Can
TBD
20LD LCC
TBD
Ceramic SOIC
210mg
ESD Tolerance (Note 3)
4KV
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
1
Static tests at
Temp ˚C
25
2
Static tests at
125
3
Static tests at
-55
4
Dynamic tests at
25
5
Dynamic tests at
125
6
Dynamic tests at
-55
7
Functional tests at
25
8A
Functional tests at
125
8B
Functional tests at
-55
9
Switching tests at
25
10
Switching tests at
125
11
Switching tests at
-55
12
Settling time at
25
13
Settling time at
125
14
Settling time at
-55
3
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LM185-1.2QML
LM185–1.2 Electrical Characteristics
DC Parameters
Symbol
VRef
Parameter
Reverse Breakdown Voltage
Conditions
Notes
VF
Forward Bias Voltage
Max
Units
Subgroups
IR = 10µA
1.223 1.247
V
1
IR = 20µA
1.205
1.26
V
2, 3
IR = 1mA
1.223 1.247
V
1
1.205
V
2, 3
IR = 20mA
∆VRef / ∆IR Reverse Breakdown Voltage
Change with Current
Min
10µA ≤ IR ≤ 1mA
1.26
1.223 1.247
V
1
1.205
1.26
V
2, 3
-1.0
1.0
mV
1
2, 3
20µA ≤ IR ≤ 1mA
-1.5
1.5
mV
1mA ≤ IR ≤ 20mA
-10.0
10.0
mV
1
-20.0
20.0
mV
2, 3
-1.0
-0.4
V
1
IF = 2mA
DC Drift Parameters
Delta calculations performed on QMLV devices at group B , subgroup 5, unless otherwise specified on the IPI.
Symbol
VR
Parameter
Reverse Breakdown Voltage
Conditions
Notes
Min
Max
Units
Subgroups
IR = 10µA
-0.01
0.01
V
1
IR = 20mA
-0.01
0.01
V
1
Min
Max
Units
Subgroups
V
1
2, 3
LM185BY–1.2 Electrical Characteristics
DC Parameters
Symbol
VRef
Parameter
Reverse Breakdown Voltage
Conditions
Notes
IR = 10µA
1.223 1.247
IR = 20µA
1.205
1.26
V
IR = 1mA
1.223 1.247
V
1
1.205
1.26
V
2, 3
1.223 1.247
V
1
2, 3
IR = 20mA
∆VRef / ∆IR Reverse Breakdown Voltage
Change with Current
1.205
1.26
V
10µA ≤ IR ≤ 1mA
-1.0
1.0
mV
1
20µA ≤ IR ≤ 1mA
-1.5
1.5
mV
2, 3
1mA ≤ IR ≤ 20mA
VF
Forward Bias Voltage
TC
Temperature Coefficient
IF = 2mA
(Note 4)
-10.0
10.0
mV
1
-20.0
20.0
mV
2, 3
-1.0
-0.4
V
1
50
PPM/˚C
2, 3
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction
to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/θJA or the
number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 1.5KΩ in series with 100pF.
Note 4: The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between the operating TMin
& TMax, divided by (TMax − TMin). The measured temperatures (TMeasured) are −55˚C, 25˚C, & 125˚C or ∆VRef / (TMax − TMin)
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4
LM185-1.2QML
Typical Performance Characteristics
Reverse Characteristics
Reverse Characteristics
20156113
20156114
Temperature Drift of 3
Representative Units
Forward Characteristics
20156116
20156115
Reverse Dynamic Impedance
Reverse Dynamic Impedance
20156118
20156117
5
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LM185-1.2QML
Typical Performance Characteristics
(Continued)
Noise Voltage
Filtered Output Noise
20156120
20156119
Response Time
20156121
Typical Applications
Reference from
1.5V Battery
Wide Input
Range Reference
20156123
20156108
Micropower Reference
from 9V Battery
20156122
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6
(Continued)
Precision 1µA to 1mA Current Sources
Micropower* 5V Regulator
20156126
20156124
*IQ . 30µA
Micropower* 10V Reference
20156127
20156125
*IQ .20µA standby current
7
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LM185-1.2QML
Typical Applications
LM185-1.2QML
Typical Applications
(Continued)
METER THERMOMETERS
Centigrade Thermometer
0˚C−100˚C Thermometer
20156101
20156128
Calibration
Calibration
1. Short LM385-1.2, adjust R3 for IOUT= temp at 1µA/˚K
1. Adjust R1 so that V1 = temp at 1mV/˚K
2. Remove short, adjust R2 for correct reading in centigrade
2. Adjust V2 to 273.2mV
†IQ at 1.3V.500µA
†IQ for 1.3V to 1.6V battery volt-
IQ at 1.6V.2.4mA
age = 50µA to 150µA
Micropower Thermocouple Cold Junction
Compensator
Lower Power Thermometer
20156129
*2N3638 or 2N2907 select for inverse HFE . 5
†Select for operation at 1.3V
‡ IQ . 600µA to 900µA
0˚F−50˚F Thermometer
20156131
Adjustment Procedure
1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature
multiplied by the thermocouple Seebeck coefficient.
2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple
Seebeck coefficient multiplied by 273.2.
Thermocouple
Type
R1 R2
Voltage
Voltage
Coefficient (Ω) (Ω)
Seebeck
Across
R1
Across
R2
@ 25˚C
(mV)
(µV/˚C)
(mV)
20156130
Calibration
1. Short LM385-1.2, adjust R3 for IOUT= temp at 1.8µA/˚K
2. Remove short, adjust R2 for correct reading in ˚F
Typical supply current 50µA
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8
J
52.3
5231.24k
15.60
T
42.8
432 1k
12.77
14.32
11.78
K
40.8
412953Ω
12.17
11.17
S
6.4
63.4150Ω
1.908
1.766
Released
10/07/05
Revision
A
Section
Originator
New Release, Corporate format
L. Lytle
9
Changes
2 MDS data sheets converted into one Corp.
data sheet format. MNLM185-1.2-X Rev 2A3
and MNLM185BY-1.2-X Rev 0B0 data
sheets will be archived.
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LM185-1.2QML
Revision History Section
LM185-1.2QML
Physical Dimensions
inches (millimeters) unless otherwise noted
TO-46 Metal Can Package (H)
NS Package Number H02A
Leadless Chip Carrier Package (E)
NS Package Number E20A
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10
LM185-1.2QML Micropower Voltage Reference Diode
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Ceramic SOIC Package (WG)
NS Package Number WG10A
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