TIGER ELECTRONIC CO.,LTD Product specification C106M Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Parameter Symbol Max Unit Repetitive peak off-state voltages VDRM VRRM 600 V Average on-state current IT(AV) 2.5 A RMS on-state current IT(RMS) 4.0 A ITSM 38 A Tj 110 o Tstg -45~150 o Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Parameter Symbol C C Test Conditions Min Typ Max Unit 600 — — V Repetitive peak off-state voltages VDRM VRRM Average on-state current IT(AV) half sine wave; Tmb< 103 oC — 2.5 — A RMS on-state current IT(RMS) all conduction angles — 4.0 — A On-state voltage VT IT=5.0A — 1.23 1.8 V Holding current IH VD =12 V; IGT = 0.1 A — 0.1 6.0 mA Latching current IL VD =12 V; IGT = 0.1 A — 0.17 10 mA Gate trigger current IGT VD =12 V; IT = 0.1 A — 15 200 uA Gate trigger voltage VGT VD =12 V; IT = 0.1 A — 0.4 1.5 V