TGS MMBT5551LT1

TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications
requiring high Breakdown Voltages.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature..................................................................................................-55+150°C
Junction Temperature............... ............................................................ ..........+150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage. .......................................................................................180 V
VCEO Collector to Emitter Voltage. ....................................................................................160 V
VEBO Emitter to Base Voltage ...............................................................................................6 V
IC Collector Current ........................................................................ .................................600mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
80
80
30
100
-
Typ.
-
Max.
50
50
0.15
0.2
1
1
250
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1.0mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
TIGER ELECTRONIC CO.,LTD
TIGER ELECTRONIC CO.,LTD
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
Saturation Voltage (mV)
10000
hFE
VCE=5V
100
1000
VBE(sat) @ IC=10IB
100
VCE(sat) @ IC=10IB
10
10
0.1
1
10
100
0.1
1000
Collector Current (mA)
10
100
1000
Collector Curren (mA)
Capacitance & Reverse-Biased Voltage
Cutoff Frequency & Collector Current
100
1000
Cutoff Frequency (MHz)
Capacitance (pF)
1
10
100
VCE=10V
Cob
1
10
0.1
1
10
100
1000
Reverse Biased Voltage (V)
1
10
100
Collector Current (mA)
Safe Operating Area
10000
Collecotr Current-IC (mA)
1000
PT=1s
100
PT=1ms
PT=100ms
10
1
1
10
100
1000
Forward Biased Voltage-VCE (V)
TIGER ELECTRONIC CO.,LTD
TIGER ELECTRONIC CO.,LTD
SOT-23 Dimension
Marking :
A
L
3
G1
B
1
S
2
3-Lead SOT-23 Plastic
Surface Mounted Package
G
V
C
D
H
K
Style : Pin 1.Base 2.Emitter 3.Collector
J
*:Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102
0.118
0.0550 0.0630
0.0354 0.0512
0.0118 0.0197
0.0669 0.0910
0.0040
Millimeters
Min.
Max.
2.80
3.00
1.40
1.60
0.90
1.30
0.30
0.50
1.70
2.30
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0035 0.0043
0.0128 0.0266
0.0335 0.0453
0.0886 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.09
0.11
0.32
0.67
0.85
1.15
2.25
2.75
0.25
0.65
TIGER ELECTRONIC CO.,LTD