TIGER ELECTRONIC CO.,LTD STEREO AUDIO AMPLIFIER DESCRIPTION TEA2025 Outline Drawing Unit:mm The TEA2025 D2025 is a monolithic integrated audio a mplifier in a 16-pin plastic dual in TEA2025 line pack ag e. It is designed for portable cassette players and radios. FEATURE Working Voltage down to 3V Few External components High Channel isolation Vo ltage gain up to 45dB(Adjustable with external resistor) So ft clip p ing Internal Thermal protection BLOCK DIAGRAM 9 10 11 PIN CONNECTION 12 14 13 15 50 THERMAL PROTECT _ 10K + START CIRCUIT Bridge 1 16 Vcc Out-2 2 15 Out-1 Boot-2 3 14 Boot-1 GND 4 13 GND 5K 8 DECOUPLING 16 50 + 7 TEA2025 10K _ 50 6 5 4 3 1 GND 5 12 Feedback-2 6 11 IN-2(+) 7 10 SVR 8 9 GND FeedBack-1 IN-1(+) GND(Sub) 2 SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 1/4 Silicore TEA2025 2025 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Value Unit Supply Voltage Vcc 16.5 V Output Peak Current Io 1.5 A Iunction Temp erature Tj 150 °C Storage Temperature Tstg -40~150 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified: Ta=25°C, Vcc=9V; Dual Mode) Characteristics Test conditions Symbol Min. Typ. Max. Unit Supply Voltage Vcc Quiescent Current Quiescent Output Current IQ 40 Vo 4.5 Voltage Gain Dual Mode Gv BTL Mode Voltage Gain Difference Input Impedance R L =8 Ω Dual Mode per R L =4 Ω channel Vcc=6V R L =8 Ω BTL Mode Distortion Supply Vo ltage Rejection Input Noise Vo ltage Cross-Talk 50 mA V 47 49 51 53 ±1 1.7 dB dB kΩ 30 2.3 1.3 0.7 Po 1 0.1 Vcc=9V; R L =8 Ω 4.7 Vcc=6V; R L =4 Ω 2.8 Dual Mode Vcc=9V; R L =4 Ω f=1kHz; Po=250mW BTL Mode R G =0; Vripple=150mVrms Av=45dB; fripple=100Hz R G =0 Av =200 Bandwidth 20Hz to 20kHz R G =10kΩ SVR R G =10kΩ; f=1kHz; R L =4 Ω; Po=1W C.T. 0.3 d 1.5 0.5 40 Vn SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn W 0.6 Vcc=3V; R L =4 Ω CHMC V 45 Ri R L =4 Ω 12 43 ∆Gv Vcc=9V Output Power (f=1kHz; d=10%) 3 40 46 dB 1.5 3 3 6 55 % µV dB 2/4 Silicore TEA2025 D2025 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Junction-case thermal resistance Rth(j-c) 15 °C/W Junction-ambient thermal resistance(see Note) Rth(j-a) 60 °C/W Note : The Rth(j-a) is measured on devices bonded on a 10×5 ×0.15 cm glass-epoxy substrate with a 35µm thick copper surface of 5cm 2 TEST CIRCUIT 1. Dual Mode Circuit TEA2025 2. BTL Mode Circuit TEA2025 SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 3/4 TEA2025 2025 Silicore CHARACTERISTICS CURVES SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 4/4