MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply - output rectification, power management, instrumentation Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds,0.25", (6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 MBR10HXXCT = Specific Device Code G = Green Compound Polarity: As marked Y = Year WW = Work Week Mounting position:Any Mounting torque: 5 in. - lbs, max Weight: 1.88 grams Marking Diagram Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage VRRM MBR 10H100CT 100 Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC Method) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM Type Number Symbol MBR 10H150CT 150 MBR 10H200CT 200 1.0 Units V 0.5 A Maximum Instantaneous Forward Voltage at: (Note 2) IF=5A, TA=25℃ IF=5A, TA=125℃ IF=10A, TA=25℃ IF=10A, TA=125℃ VF Maximum Instantaneous Reverse Current at Rated DC Blocking Voltage @ TA=25 ℃ @ TA=125 ℃ IR 5 1 Voltage Rate of Change (Rated VR) dV/dt 10,000 Maximum Typical Thermal Resistance RθJC 1.5 TJ - 65 to + 175 O C TSTG - 65 to + 175 O C Operating Junction Temperature Range Storage Temperature Range 0.88 0.85 0.75 0.75 0.95 0.97 0.85 0.85 V uA mA V/us O Note 1: 2.0uS Pulse Width, f=1.0 KHz Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle Version:F11 C/W RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 180 10 8 120 6 4 RESISTIVE OR INDUCTIVELOAD 2 0 0 25 50 75 100 125 150 175 90 60 30 0 1 CASE TEMPERATURE ( oC) INSTANTANEOUS REVERSE A CURRENT (mA) TA=25℃ PULSE WIDTH=300uS 1% DUTY CYCLE TA=125℃ 10 TA=25℃ 1 1 TA=125℃ 0.1 TA=75℃ 0.01 0.001 TA=25℃ 0.0001 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 FIG. 5- TYPICAL JUNCTION CAPACITANCE 10000 TRANSIENT THERMAL IMPEDANCE (℃/W) 100 TA=25℃ f=1.0MHz Vsig=50mVp-p 1000 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) JUNCTION CAPACITANCE (pF) A 100 10 1000 100 10 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISRICS INSTANTANEOUS FORWARD A CURRENT (A) 8.3mS Single Half Sine Wave JEDEC Method 150 PEAK FORWARD SURGE A CURRENT (A) AVERAGE FORWARD A CURRENT (A) 12 100 FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 10 1 0.1 0.1 1 10 REVERSE VOLTAGE (V) 100 0.01 0.1 1 10 100 T-PULSE DURATION (sec) Version:F11