WTE DF10

DF005 – DF10
WTE
POWER SEMICONDUCTORS
1.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
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Low Forward Voltage Drop
+
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
A
B
Plastic Material – UL Recognition Flammability
Classification 94V-O
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~
C
Mechanical Data
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E
Case: Molded Plastic
Terminals: Plated Leads Solderable per
G
H
MIL-STD-202, Method 208
Polarity: As Marked on Case
I
Weight: 0.38 grams (approx.)
*Low profile models (E = 2.20~2.50mm) are available.
Mounting Position: Any
Please consult factory.
Marking: Type Number
Maximum Ratings and Electrical Characteristics
D
DIL
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
8.13
8.51
D
7.60
8.90
E*
3.20
3.40
G
0.41
0.51
H
3.90
4.20
I
5.0
5.20
All Dimensions in mm
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TA = 40°C
Symbol
DF005
DF01
DF02
DF04
DF06
DF08
DF10
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30
A
Forward Voltage per element
@IF = 1.0A
VFM
1.1
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
IRM
10
500
µA
Cj
25
pF
RJA
40
K/W
Tj, TSTG
-55 to +150
°C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm2 copper pad.
DF005 – DF10
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© 2002 Won-Top Electronics
10
60 Hz Resistive or
Inductive load
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
1.0
0.5
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.1
0.01
0
40
60
80
100
120
140
0.4
1.0
1.4
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
Tj = 25°c
f = 1.0 Mhz
Vsig = 50 mV p-p
Single half-sine-Wave
(JEDEC M ethod)
50
CJ, CAPACITANCE (pF)
IFSM , PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
0.8
0.6
40
30
20
10
10
0
1
1
10
1
100
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
NUM BER OF CYCLES AT 60 Hz
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DF005 – DF10
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© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
DF005
DIL Bridge
50 Units/Tube
DF01
DIL Bridge
50 Units/Tube
DF02
DIL Bridge
50 Units/Tube
DF04
DIL Bridge
50 Units/Tube
DF06
DIL Bridge
50 Units/Tube
DF08
DIL Bridge
50 Units/Tube
DF10
DIL Bridge
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: [email protected]
Internet: http://www.wontop.com
DF005 – DF10
We power your everyday.
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© 2002 Won-Top Electronics