YANGJIE BZX55C

BZX55C Series
Voltage Range
2.4 to 75 Volts
Zener diode
DO-35
Features
1.High reliability
Applications
1.02(26.0)
MIN
Voltage stabilization
.079(2.0)
MAX
Construction
Silicon epitaxial planer
.165(4.2)
MAX
Absoluto
Maximum Ratings
0
1.02(26.0)
MIN
Tj=25 C
.020(.52)
TYP
Dimensions in inches and (millimeters)
Symbol
Value
Unit
PD
500
mW
Z-current
lz
PD/Vz
mA
Junction temperature
Tj
175
0C
Tstg
-65~+175
0C
Parameter
Test Conditions
Type
I=4mm TL*25 C
0
Power dissipation
Storage temperature range
Maximum Thermal Resistance
Tj=250C
Parameter
Junction ambient
Test Condltions
Symbol
Value
Unit
I=4mm TL=constant
RthJA
500
K/W
Electrcal Characteristics
Tj=250C
Parameter
Forward voltage
Test Conditions
lF=200mA
Type
Symbol
VF
Min
Typ
Max
Unit
1.5
V
Type
BZX55C
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Vznom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
lzt for Vzr and
mA
V
5
2.28~2.56
5
2.5~2.9
5
2.8~3.2
5
3.1~3.5
5
3.4~3.8
5
3.7~4.1
5
4.0~4.6
5
4.4~5.0
5
4.8~5.4
5
5.2~6.0
5
5.8~6.6
5
6.4~7.2
5
7.0~7.9
5
7.7~8.7
5
8.5~9.6
5
9.4~10.6
5
10.4~11.6
5
11.4~12.7
5
12.4~14.1
5
13.8~15.6
5
15.3~17.1
5
16.8~19.1
5
18.8~21.2
5
20.8~23.3
5
22.8~25.6
5
25.1~28.9
5
28~32
5
31~35
5
34~38
2.5
37~41
2.5
40~46
2.5
44~50
2.5
48~54
2.5
52~60
2.5
58~66
2.5
64~72
2.5
70~79
1)Tighter tolerances available request:
BZX55A...*1% of Vznom
BZ55B...*2% of Vznom
2)at Tj=1500C
r
*
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
rzk at
*
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<600
<700
<700
<1000
<1000
<1000
<1500
lzk
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
lR at
uA
<50
<10
<4
<2
<2
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
VR
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TKvz
%/k
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
BZX55C Series
Characteristics (Tj=250C unless otherwise specified)
600
1000
500
Tj=25 C
*Vz-Voltage Change (mV)
Ptot-Total Dissipation (mW)
o
400
300
200
100
Iz=5mA
10
100
0
1
0
40
80
120
160
200
0
5
0
Tamb-Ambient Temperature Temperature ( C)
10
15
20
25
Vz-Z-Voltage (V)
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25-C
Figure 1.Total Power Dissipation vs.
Ambient Temperature
1.3
15
0
1.2
-4
-4
TKvz=10x10 /K
Vzm-Relative Voltage Change
-4
8x10 /K
-4
6x10 /K
1.1
-4
4x10 /K
-4
2x10 /K
1.0
0
-4
-2x10 /K
-4
-4x10 /K
0.9
0.8
10
5
Iz=5mA
0
-5
-60
0
60
120
180
240
0
Tj-Junction Temperature Temperature ( C)
150
VR=2V
0
Tj=25 C
100
50
0
5
10
15
20
Vz-Z-Voltage (V)
Figure 5.Diode Capacitance vs.Z-Voltage
10
20
30
40
Figure 4. Temperature Conefficient of Vz vs.
Z-Volltage
200
0
0
Vz-Z-Voltage (V)
Figure 3.Typical of Working Voltage vs.
Junction Temperature
CD-Diode Capacitance (pF)
TKvz-Temperature Coefficient of Vz(10 /K)
Vzm=Vz/Vz(25 C)
25
50
BZX55C Series
100
100
10
80
0
Iz-Z-current (mA)
IF-Forward
Current (mA)
Tj=25 C
1
0.1
60
40
0.01
20
0.001
0
0.2
0.4
0.6
0.8
0
1.0
0
5
VF-Forward Voltage (V)
8
12
Vz-Z-Voltage (V)
16
20
Figure 7. Z-Current vs. Z-Voltage
Figure 6. Forward Current vs.Forward Voltage
1000
50
Iz=1mA
Vzm-Relative Voltage Change
40
Ptot=500mW
0
Tamb=25 C
rz-Differentical Z-Resistance (*)
100
30
20
10
5mA
10mA
10
1
0
0
15
20
25
Vz- Z- Voltage (V)
30
35
5
10
15
Figure 9. Differential Z-Resistance vs. Z-Volltage
Figure 8.Z-Current vs.Z-Voltage
1000
tp/T=0.5
100
tp/T=0.2
CD-Diode Capacitance (pF)
Single Pulse
RthJA=300K/W
*T=Tjmax-Tamb
10
tp/T=0.02
tp/T=0.1
tp/T=0.01
tp/T=0.05
iZM=(-Vz+(Vz2+4rzj x*T/Zthp)1/2)/(2rzj)
1
-1
10
0
10
Figure 10. Thermal Response
20
Vz-Z-Voltage (V)
1
10
tp- Pulse Length (ms)
2
10
25