HS1A THRU HS1M 高效整流二极管 High Efficient Rectifier ■特征 ■外形尺寸和印记 Features ● Io 1.0A ● VRRM 50V-1000V ● 耐正向浪涌电流能力高 High surge current capability ● 封装:模压塑料 Cases: Molded plastic ■用途 Outline Dimensions and Mark DO-214AC(SMA) .062(1.58) .049(1.25) Mounting Pad Layout .111(2.83) .094(2.40) 0.065 (1.66) .187(4.75) .167(4.25) 0.077(1.96) .091(2.30) .075(1.90) .056(1.41) .030(0.76) Applications 0.080 (2.04) ●整流用 Rectifier 0.220 .012(0.31) (5.58) .006(0.15) .008(0.20) .003(0.08) .208(5.28) .194(4.93) Dimensions in inches and (millimeters) ■极限值(绝对最大额定值) Limiting Values (Absolute Maximum Rating) 参数名称 符号 单位 测试条件 Item Symbol Unit Test Conditions VRRM V 反向重复峰值电压 Repetitive Peak Reverse Voltage 正向平均电流 Average Forward Current 正向(不重复)浪涌电流 Surge(Non-repetitive)Forward Current 结温 Junction Temperature 储存温度 Storage Temperature HS1 A B D G J K M 50 100 200 400 600 800 1000 正 弦 半 波 60Hz , 电 阻 负 载 , TL=110℃ 60HZ Half-sine wave, Resistance load, TL =110℃ 正弦半波60Hz, 一个周期, Ta=25℃ 60Hz Half-sine wave ,1 cycle , Ta =25℃ IF(AV) A 1.0 IFSM A TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 30 ■电特性 (Ta=25℃ 除非另有规定) Electrical Characteristics (Ta=25℃ Unless otherwise specified) 符号 Symbol 单位 Unit 正向峰值电压 Peak Forward Voltage 最大反向恢复时间 Maximum reverse recovery time VF V IF =1.0A 1.0 trr ns IF=0.5A,IR=1.0A,Irr=0.25A 50 反向漏电流 Peak Reverse Current IRRM1 热阻(典型) Thermal Resistance(Typical) RθJ-A IRRM2 μA ℃/W RθJ-L 测试条件 Test Condition HS1 参数名称 Item VRM=VRRM A B D G K 1.3 M 1.7 75 Ta =25℃ 10 Ta =100℃ 100 结和环境之间 Between junction and ambient 结和终端之间 Between junction and terminal J 751) 271) 备注:Notes: 1) 热阻从结到环境及从结到引线,在电路板的0.2" x 0.2" (5.0毫米 x 5.0毫米)铜垫片区 Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas Document Number 0144 Rev. 1.0, 22-Sep-11 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com HS1A THRU HS1M ■特性曲线(典型) Characteristics(Typical) 图2:最大正向浪涌冲击耐受力 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 1.0 IFSM(A) IO(A) 图1:正向电流降额曲线 FIG.1: FORWARD CURRENT DERATING CURVE 35 30 0.8 8.3毫秒正弦半波 8.3ms Single Half Sine Wave JEDEC Method 25 0.6 20 0.4 15 10 0.2 0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0 25 50 5 75 125 100 150 TL(℃) 0 1 2 100 IR(uA) IF(A) 20 周波数 100 Number of Cycles 图4:典型反向特性曲线 FIG.4:TYPICAL REVERSE CHARACTERISTICS 图3: 典型正向特性曲线 FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25℃ Pulse width=300us 1% Duty Cycle HS1A-D 10 10 1000 100 Tj=100℃ HS1G 1.0 10 Tj=25℃ HS1J-M 0.1 1.0 0.1 0.01 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 VF(V) 0 20 40 60 80 100 Voltage(%) 图 5: 反向恢复时间试验电路及测试波形示意图 FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR Document Number 0144 Rev. 1.0, 22-Sep-11 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com