CHENMKO ENTERPRISE CO.,LTD CH495DPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.4 Ampere APPLICATION * Low power rectification SOT-23 .019 (0.50) .041 (1.05) .033 (0.85) * Silicon epitaxial planar .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * 04F CIRCUIT (2) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) MARKING (3) .045 (1.15) .033 (0.85) (1) Dimensions in inches and (millimeters) (3) .002 (0.05) * Small surface mounting type. (SOT-23) * Two diode with common cathode for excellent. * High reliability .018 (0.30) FEATURE SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CH495DPT UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 40 Volts Maximum RMS Voltage VRMS 28 Volts Maximum DC Blocking Voltage VDC 25 Volts IO 0.4 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave IFSM 2.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 20 pF Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL CH495DPT UNITS Maximum Instantaneous Forward Voltage at IF(1)= 10mA VF(1) 0.30 Volts Maximum Instantaneous Forward Voltage at IF(2)= 200mA VF(2) 0.50 Volts IR 70 uAmps Maximum Average Reverse Current at VR= 25V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. 2002-5 RATING CHARACTERISTIC CURVES ( CH495DPT ) FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS 1 REVERSE CURRENT, (A) FORWARD CURRENT, (A) 100m 100m C -40 o C 5 75 o C 25 o C o 2 =1 Ta 10m 1m o Ta=125 C 1m o 75 C 100u o 25 C 10u o 0C 100u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 10 1 0 5 10 15 20 25 REVERSE VOLTAGE, (V) 1u 0 10 20 REVERSE VOLTAGE, (V) 100 JUNCTION CAPACITANCE, (pF) 10m 30 35 30 40