CHENMKO SBM5820PT

SBM5820PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 - 40 Volts CURRENT 3.0 Amperes
SBM5822PT
FEATURES
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* For surface mounted applications
* Low profile package
* Built-in strain relief
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* High current capability, low forward voltage drop
* High surge capability
* For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMB
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
(1)
(2)
0.190 (4.75)
MECHANICAL DATA
0.160 (4.06)
Case: JEDEC SMB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounce 0.093 gram
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)(max)
0.220 (5.59)
0.205 (5.21)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SMB
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SBM5822PT
UNITS
Maximum Recurrent Peak Reverse Voltage
RATINGS
SYMBOL
VRRM
20
30
40
Volts
Maximum RMS Voltage
VRMS
14
21
28
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current at TL = 95oC
SBM5820PT
SBM5821PT
Volts
IO
3.0
Amps
IFSM
80
Amps
CJ
250
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method) TL = 75oC
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
R
Storage and Operating Temperature Range
pF
o
28
JA
TJ, TSTG
C/W
o
-65 to +125
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
SBM5820PT
SBM5822PT
UNITS
Maximum Instantaneous Forward Voltage at 3.0 A DC
CHARACTERISTICS
VF
0.475
0.500
0.525
Volts
Maximum Instantaneous Forward Voltage at 9.4 A DC
VF
0.850
0.900
0.950
Maximum Average Reverse Current
@ TA = 25oC
at Rated DC Blocking Voltage (Note 3)
@ TA = 100oC
SBM5821PT
Volts
2.0
mAmps
20
mAmps
IR
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Thermal Resistance ( Junction to Ambient ) : P.C.B. mounted 0.31 x 0.31" ( 8 x 8mm) copper pad areas
3. Measured at Pulse Width 300 us, Duty Cycle 2%.
2001-6
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
4
3
2
Single
Half Wave 60HZ
Resistive or
Inductive Load
1
0
0
20
40
60
80
100
120
140
LEAD TEMPERATURE, ( oC )
INSTANTANEOUS FORWARD CURRENT, ( A )
RATING CHARACTERISTIC CURVES ( SBM5820 THRU SBM5822 )
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARCTERISTICS
20
SBM5820
10
SBM5821
TJ =125oC
Pulse Width = 300us
1% Duty Cycle
0.1
0
PEAK FORWARD SURGE CURRENT, (A)
TJ = 75oC
.10
TJ = 25oC
.01
.001
.3
.4
.5
.6
.7
.8
.9
1.0
70
8.3 ms Single Half Sine-Wave
(JEDEC Method)
60
50
40
30
20
10
0
20
40
60
80
100
120
140
1
2
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
5
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
600
400
TJ = 25oC
200
100
60
20
10
.1
.4
1.0
4
10
REVERSE VOLTAGE, (V)
10
20
NUMBER OF CYCLES AT 60HZ
1000
JUNCTION CAPACITANCE, (pF)
INSTANTANEOUS REVERSE CURRENT, (mA)
TJ = 100 C
1.0
.2
FIG. 4 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
80
o
.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
SBM5822
1.0
40
50
100