CHENYI MMBD4448

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMBD4448
Features
l
Fast Switching Speed
l
Surface Mount Package Ideally Suited for Automatic Insertion
l
For General Purpose Switching Applications
l
High Conductance
Surface Mount
Schottky Barrier
Switching Diode
350mW
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
SOT-23
l Polarity: See Diagram
A
D
l Marking: KA3
C
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Volt.
VRM
100
V
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
75
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current(Note1)
IFM
500
mA
Average Rectified Output Current
Io
250
mA
Non-Repetitive Peak @ t<=1.0s
IFSM
2
A
4
A
Forward Surge Current @ t=1.0us
Power Dissipation(Note 1)
Pd
350
mW
Thermal Resistance(Note 1)
R
357
K/W
Operation/Storage Temp. Range
Tj, TSTG
-55 to +150
o
F
Maximum Forward
Symbol
VF M
Min
Max
0.62
0.72
-----
0.855
Voltage Drop
Unit
C
IRM
-----
Reverse Current
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
Test Cond.
.031
.800
IF =10mA
.035
.900
IF =150mA
uA
J
DIMENSIONS
IF =100mA
1.25
Maximum Peak
H
IF =5.0mA
V
1
2.5
E
G
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
B
.079
2.000
V R =75V
o
50
uA
VR =75V Tj=150 C
30
uA
VR =25V Tj=150 C
o
25
nA
V R =20V
Junction Capacitance
Cj
-----
4
pF
V R =0V, f=1.0MHz
Reverse Recovery Time
trr
-----
4
ns
.037
.950
Note : 1. Valid provided that terminals are kept at ambient temperature
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM
www.cnelectr.com
.037
.950
inches
mm
MMBD4448
Figure 1
Typical Forward Characteristics
200
Figure 2
Forward Derating Curve
100
420
60
40
350
20
280
MilliAmps 10
6
210
MilliWatts
4
140
2
25°C
70
1
Single Phase, Half Wave
60Hz Resistive or Inductive Load
.6
0
.4
0
50
75
100
125
150
175
°C
.2
.1
.4
.6
.8
1.0
1.2
Admissable Power Dissipation - MilliWattsversus
Ambient Temperature - °C
1.4
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
10
6
4
2
pF
TJ=25°C
1
.6
.4
.2
.1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
Junction Capacitance - pFversus
Reverse Voltage - Volts
www.cnelectr.com
400
1000
MMBD4448
Figure 4
Typical Reverse Characteristics
Figure 5
Peak Forward Surge Current
1000
2.4
600
400
2.0
200
1.6
100
1.2
60
Amps
40
0.8
0.4
20
0
10
NanoAmps
6
1
2
4
6
20
40
60 80 100
Cycles
4
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
2
1
TA=25°C
.6
TA=100°C
.4
.2
.1
8 10
20
40
60
80
100
120
140
TJ
Instantaneous Reverse Leakage Current - NanoAmperesversus
Junction Temperature - °C
www.cnelectr.com
www.