Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBD4448 Features l Fast Switching Speed l Surface Mount Package Ideally Suited for Automatic Insertion l For General Purpose Switching Applications l High Conductance Surface Mount Schottky Barrier Switching Diode 350mW Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 SOT-23 l Polarity: See Diagram A D l Marking: KA3 C Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Volt. VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current(Note1) IFM 500 mA Average Rectified Output Current Io 250 mA Non-Repetitive Peak @ t<=1.0s IFSM 2 A 4 A Forward Surge Current @ t=1.0us Power Dissipation(Note 1) Pd 350 mW Thermal Resistance(Note 1) R 357 K/W Operation/Storage Temp. Range Tj, TSTG -55 to +150 o F Maximum Forward Symbol VF M Min Max 0.62 0.72 ----- 0.855 Voltage Drop Unit C IRM ----- Reverse Current DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout Test Cond. .031 .800 IF =10mA .035 .900 IF =150mA uA J DIMENSIONS IF =100mA 1.25 Maximum Peak H IF =5.0mA V 1 2.5 E G Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic B .079 2.000 V R =75V o 50 uA VR =75V Tj=150 C 30 uA VR =25V Tj=150 C o 25 nA V R =20V Junction Capacitance Cj ----- 4 pF V R =0V, f=1.0MHz Reverse Recovery Time trr ----- 4 ns .037 .950 Note : 1. Valid provided that terminals are kept at ambient temperature 2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM www.cnelectr.com .037 .950 inches mm MMBD4448 Figure 1 Typical Forward Characteristics 200 Figure 2 Forward Derating Curve 100 420 60 40 350 20 280 MilliAmps 10 6 210 MilliWatts 4 140 2 25°C 70 1 Single Phase, Half Wave 60Hz Resistive or Inductive Load .6 0 .4 0 50 75 100 125 150 175 °C .2 .1 .4 .6 .8 1.0 1.2 Admissable Power Dissipation - MilliWattsversus Ambient Temperature - °C 1.4 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 10 6 4 2 pF TJ=25°C 1 .6 .4 .2 .1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 Junction Capacitance - pFversus Reverse Voltage - Volts www.cnelectr.com 400 1000 MMBD4448 Figure 4 Typical Reverse Characteristics Figure 5 Peak Forward Surge Current 1000 2.4 600 400 2.0 200 1.6 100 1.2 60 Amps 40 0.8 0.4 20 0 10 NanoAmps 6 1 2 4 6 20 40 60 80 100 Cycles 4 Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 2 1 TA=25°C .6 TA=100°C .4 .2 .1 8 10 20 40 60 80 100 120 140 TJ Instantaneous Reverse Leakage Current - NanoAmperesversus Junction Temperature - °C www.cnelectr.com www.