CHINASEMI CSM

CHINA
SEMICONDUCTOR
CORPORATION
Spec. No.
Rev.
PS-ND-08090403
A
PRODUCT SPECIFICATION
Model No
CSM-88160SG
Descriptions:
1.2 Inch 8X8 Dot-Matrix Display
Dot Pitch 4.0mm
CSM-58161: Column Cathode, Row Anode
Emitting Color: Super Bright Red & Yellow Green
CUSTOMER APPROVED
SIGNATURES
APPROVED BY
CHECKED BY
PREPARED BY
CHINA SEMICONDUCTOR CORPORATION
Address:2FL. NO.909,Chung-Cheng Road,
Chung-Ho City Taipei Hsien,Taiwan.
OPTO PLUS TECHNOLOGIES CO.,LTD
Address:696 Shun jiang Rd.,Ji Shan St.Shaoxing,
ZheJiang,China
Tel:886-2-2223-9696
Fax:886-2-2223-9377
Tel:86-0575-88623888
Fax:86-0575-88623112
http://www.csctw.com.tw
CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
Rev.
PS-ND-08090403
A
CSM-88160SG
Features 1. 1.2 inch (31.0mm) Matrix height.
2. Case mold type.
3. RoHS compliant.
4. Low power consumption.
5. Easy mounting on P.C. board or socket.
Device Selection Guide -
Part No.
CSM-88160SG
Chip
Material
Emitted Color
AlGaAs
GaP
Super Bright Red
Yellow Green
Column
Row
Cathode
Anode
Package Dimensions -
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CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
PS-ND-08090403
Rev.
A
CSM-88160SG
Internal Circuit Diagrams -
Absolute Maximum Rating Super Bright Red
(Ta=25 )
Parameter
Symbol
Rating
Unit
Power Dissipation Per Dice
PAD
75
mW
Continuous Forward Current Per Dice
IAF
30
mA
Peak Current Per Dice(duty cycle 1/10, 1kHz)
IPF
120
mA
-
0.42
VR
5
Operating Temp.
Topr
-35 ~ +85
Storage Temp.
Tstg
-35 ~ +85
Derating Linear From 25
Reverse Voltage Per Dice
Per Dice
mA/
V
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
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CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
Rev.
PS-ND-08090403
A
CSM-88160SG
Yellow Green
(Ta=25 )
Parameter
Symbol
Rating
Unit
Power Dissipation Per Dice
PAD
70
mW
Continuous Forward Current Per Dice
IAF
25
mA
Peak Current Per Dice(duty cycle 1/10, 1kHz)
IPF
90
mA
-
0.33
VR
5
Operating Temp.
Topr
-35 ~ +85
Storage Temp.
Tstg
-35 ~ +85
Derating Linear From 25
Per Dice
Reverse Voltage Per Dice
mA/
V
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
Electro-optical Characteristics Super Bright Red
Parameter
(Ta=25 )
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage Per Dot
VF
-
1.8
2.5
V
IF=20mA
Luminous Intensity Per Dot
Iv
-
6
-
mcd
IF=10mA
-
660
-
nm
IF=20mA
-
644
-
nm
IF=20mA
-
20
-
nm
IF=20mA
-
-
100
Peak Emission Wavelength
Dominant Wavelength
q
Od
Spectrum Radiation Bandwidth
Reverse Current
Luminous Intensity Matching Ratio
JS
-
IV-m
-
2:1
A
.
Yellow Green
Parameter
VR=5V
Ip=80mA
1/16Duty
(Ta=25 )
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage Per Dot
VF
-
2.1
2.8
V
IF=20mA
Luminous Intensity Per Dot
Iv
-
5
-
mcd
IF=10mA
-
568
-
nm
IF=20mA
-
572
-
nm
IF=20mA
-
30
-
nm
IF=20mA
JS
-
-
100
IV-m
-
-
2:1
Peak Emission Wavelength
Dominant Wavelength
q
Od
Spectrum Radiation Bandwidth
Reverse Current
Luminous Intensity Matching Ratio
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A
.
VR=5V
Ip=80mA
1/16Duty
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CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
PS-ND-08090403
Rev.
A
CSM-88160SG
Typical Electrical / Optical Charateristics Curves -Super Bright Red
(Ta = 25
Unless Otherwise Noted)
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CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
Rev.
PS-ND-08090403
A
CSM-88160SG
Yellow Green
(Ta = 25
Unless Otherwise Noted)
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CHINA
SEMICONDUCTOR
CORPORATION
Model No
Spec. No.
PS-ND-0710
Rev.
A
CSM-88160SG
Note: The specifications are subject to change without notice. Please contact us for updated information.
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