® CLE334W 0.165 (4.19) 0.145 (3.68) August, 2003 dia. 0.100 (2.54)0.100 dia. (2.54) pin circle 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) CATHODE (connected to case) 0.190 (4.83) 0.176 (4.47) ANODE 0.025 (0.64) max. 0.019 (0.48) 0.016 (0.41) 0.010 (0.25) max 0.147 (3.73) 0.137 (3.48) Anode leads must be externally connected together. Case 10 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • • • • • • 850nm wavelength wide emission angle cathode connected to case TO-46 header with flat window can > 10MHz operation RoHS compliant absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ...................................................................... -65°C to +150°C operating temperature ................................................................... -65°C to +125°C lead soldering temperature(1) ......................................................................... 260°C (2)(4) ..................................................................... 500mA continuous forward current peak forward current (1.0ms pulse width, 10% duty cycle).................................. 4A reverse voltage .................................................................................................... 5V continuous power dissipation(3) .................................................................... 500mW description notes: The CLE334W is an advanced, high 1. 0.06” (1.5mm) from the header for 5 seconds maximum. efficiency, high speed, AlGaAs 2. Derate linearly 4.0mA/°C from 25°C free air temperature to TA = +125°C. infrared-emitting diode with four times 3. Derate linearly 4.0mW/°C from 25°C free air temperature to TA = +125°C. the emitting surface of the typical 4. Operation at this level requires a proper heat sink. AlGaAs emitter. High power output is achieved with four equally spaced anode contacts for higher current distribution. Anodes contacts are bonded in pairs, each pair bonded to a separate lead. Chip size is 0.030” by 0.030”. The TO-46 header provides the thermal environment for reliable operation over a wide temperature range. electrical characteristics (TA = 25°C unless otherwise noted) symbol PO VF IR λp BW θHP tr tf parameter Total power output Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power i t i power i t points Emission angle at half Radiation rise time Radiation fall time min typ max units - 10 1.0 850 35 60 20 40 1.9 10 - mW V µA nm nm deg. ns ns test conditions IF = 100mA IF = 100mA VR = 5V IF = 100mA IF = 100mA IF = 100mA IF(PK) =100mA, f = kHz,D.C.= 50% IF(PK) =100mA, f = kHz,D.C.= 50% Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 Technologies, Inc. Very High Output Aluminum Gallium Arsenide Quad chip IRED Array 0.156 (3.96) 0.136 (3.45) Clairex 1301 East Plano Parkway Fax: 972-265-4949 Revised 3/15/06 Plano, Texas 75074-8524 www.clairex.com