COMCHIP CURM104-G

SMD Ultra Fast Recovery Rectifier
SMD Diodes Specialist
CURM101-G Thru CURM107-G
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
Mini SMA
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Exceeds environmental standard MIL-S19500/228
Low leakage current
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
Mechanical data
0.126(3.2)
0.110(2.8)
Case: Mini SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD750, method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.04 gram
0.067(1.7)
0.051(1.3)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
CURM
103-G
CURM
104-G
CURM
105-G
CURM
106-G
100
200
400
600
800
1000
V
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Symbol
CURM
101-G
Max. Repetitive Peak Reverse Voltage
V RRM
50
Max. DC Blocking Voltage
V DC
V RMS
Parameter
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
CURM
102-G
CURM
107-G
Unit
I FSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
1.3
1.0
50
1.7
V
75
nS
5.0
150
uA
42
°C/W
Typical. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
°C
Storage Temperature
T STG
- 5 5 t o + 1 50
°C
JA
Note 1: Thermal resistance from junction to ambient.
Rev. A
QW-BU007
Page 1
SMD Ultra Fast Recovery Rectifier
SMD Diodes Specialist
Rating and Characteristic Curves (CURM101-G Thru CURM107-G)
Fig.1 - Forward Characteristics
Fig.2 - Junction Capacitance
10
7-
G
Junction Capacitance (pF)
RM
CU
1-
G-
10
RM
10
1.0
RM
10
5-
CU
0.1
CU
Forward Current ( A )
G-
10
10
4-
3-
G
G
175
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
=1MHz and applied
4VDC reverse voltage
120
100
80
60
40
20
0.001
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.01
0.1
Forward Voltage (V)
( )
(+)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
(+)
1W
NONINDUCTIVE
100
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
Fig. 4 - Non Repetitive Forward
Surge Current
Peak surge Forward Current ( A )
10W
NONINDUCTIVE
25Vdc
(approx.)
10
Reverse Voltage (V)
Fig. 3 - Test Circuit Diagram and Reverse Recovery
Time Characteristics
50W
NONINDUCTIVE
1.0
30
8.3mS Single Half Sine
Wave JEDEC methode
24
18
Tj=25 C
12
6
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
0
1
5
10
50
100
trr
Number of Cycles at 60Hz
|
|
|
|
|
|
|
|
+0.5A
0
Fig. 5 - Current Derating Curve
1.4
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
Average Forward Current ( A )
-0.25A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
Ambient Temperature ( C)
Rev. A
QW-BU007
Page 2