1SS400 SURFACE MOUNT FAST SWITCHING DIODE Features Extremely fast reverse recovery time to reduce switching losses Very low capacitance for reduced insertion losses SOD-523 Reverse voltage rating of 80V Dim A B C D H J K Also available in lead-free plating (100% matte tin finish) APPLICATION Mobile phones and accessories Min 1.10 0.70 0.50 0.25 0.16 0.11 1.50 Max 1.30 0.90 0.70 0.35 0.24 0.13 1.70 PIN 1. CA THODE 2. A NODE Hand-held computers High Speed Switching Applications Maximum Ratings @TA=25°C unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage VRM 90 V DC Reverse voltage VR 80 V Continuous forward current IF 225 mA Surge current IFSM 0.5 A Total power dissipation Ptot 200 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55-150 ℃ Electrical Characteristics @TA=25°C unless otherwise specified Parameter Symbol Forward voltage Min. Typ. Max. Unit Conditions VF 1.2 V IF=100mA Reverse current IR 0.1 μA VR=80V Diode capacitance Cd 2.0 pF VR=0.5V,f=1MHz Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω 0.72 1SS400 RATINGS AND CHARACTERISTIC CURVES 820 Ω +10 V 2 .0 k Ω 0 .1 µ F IF 100 µH 0 .1 µ F ? DUT 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 100 10.000 TJ = 150 °C R ev erse L eak ag e Cu r ren t , I R (u A ) 10 TJ = 25 °C TJ = 75 °C 1 TJ = -25 °C 1.000 TJ = 75 °C 0.100 0.010 TJ = 25 °C 0.001 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 20 40 Fig. 2. Typical Forward Characteristics Fig. 3. Typical Reverse Characteristics 0.8 0.6 0.4 0.2 0.0 0 60 Reverse Voltage, V R (V) Forward Voltage, V F (V) Capaci tan ce (pF) F o r w ar d Cu r r en t , IF (m A ) TJ = 150 °C 10 20 30 40 Reverse Voltage, V R (V) Fig. 4. Typical Capacitance 50 60 80