DIOTECH 1SS400

1SS400
SURFACE MOUNT FAST SWITCHING DIODE
Features
Extremely fast reverse recovery time to
reduce switching losses
Very low capacitance for reduced insertion losses
SOD-523
Reverse voltage rating of 80V
Dim
A
B
C
D
H
J
K
Also available in lead-free plating
(100% matte tin finish)
APPLICATION
Mobile phones and accessories
Min
1.10
0.70
0.50
0.25
0.16
0.11
1.50
Max
1.30
0.90
0.70
0.35
0.24
0.13
1.70
PIN 1. CA THODE
2. A NODE
Hand-held computers
High Speed Switching Applications
Maximum Ratings
@TA=25°C unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
90
V
DC Reverse voltage
VR
80
V
Continuous forward current
IF
225
mA
Surge current
IFSM
0.5
A
Total power dissipation
Ptot
200
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55-150
℃
Electrical Characteristics
@TA=25°C unless otherwise specified
Parameter
Symbol
Forward voltage
Min.
Typ.
Max.
Unit
Conditions
VF
1.2
V
IF=100mA
Reverse current
IR
0.1
μA
VR=80V
Diode capacitance
Cd
2.0
pF
VR=0.5V,f=1MHz
Reverse recovery time
trr
4
ns
VR=6V,IF=10mA,RL=100Ω
0.72
1SS400
RATINGS AND CHARACTERISTIC CURVES
820 Ω
+10 V
2 .0 k Ω
0 .1 µ F
IF
100 µH
0 .1 µ F
?
DUT
5 0 Ω O u tp u t
P u ls e
G e n e ra to r
5 0 Ω In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA
2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
100
10.000
TJ = 150 °C
R ev erse L eak ag e Cu r ren t , I R (u A )
10
TJ = 25 °C
TJ = 75 °C
1
TJ = -25 °C
1.000
TJ = 75 °C
0.100
0.010
TJ = 25 °C
0.001
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
20
40
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
0.8
0.6
0.4
0.2
0.0
0
60
Reverse Voltage, V R (V)
Forward Voltage, V F (V)
Capaci tan ce (pF)
F o r w ar d Cu r r en t , IF (m A )
TJ = 150 °C
10
20
30
40
Reverse Voltage, V R (V)
Fig. 4. Typical Capacitance
50
60
80