ELM-TECH ELM7SU04BW

CMOS LOGIC IC
ELM7SU04BW
Unbuffer Inverter×2
■General description ELM7SU04BW is CMOS unbuffer inverter IC includes 2 circuits IC. It realizes high speed operation similar
to LS-TTL with lower power consumption by CMOS features.
■Features
・ Same electrical characteristic as 74HC series (output current is around 1/2 of 74HC series)
・ Low consumption current
: Idd=1.0μA(Max.)(Top=25℃ )
・ Wide power voltage range
: 2.0V~6.0V
・ High speed
: Tpd=5ns(Typ.)(Vdd=5.0V)
・ Symmetrical output impedance : | Ioh |=Iol=2mA (Min.)(Vdd=4.5V)
・ Small package
: SOT-26 ■Application
・ Cell phones
・ Digital cameras
・ Portable electrical appliances like PDA, etc.
・ Computers and peripherals
・ Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
・ Modification inside print board, adjustment of timing, solution to noise
■Selection guide
ELM7SU04BW-EL
Symbol
a
b
c
d
Function
Product version
Dual mark
Taping direction
U04: Unbuffer Inverter
B
W : Unbuffer Inverter×2
EL : Refer to PKG file
ELM7S U04 B W - EL
↑ ↑↑ ↑
a b c
d
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5~+7.0
-0.5~Vdd+0.5
-0.5~Vdd+0.5
±20
±20
±25
±25
200
-65~+150
1
Unit
V
V
V
mA
mA
mA
mA
mW
℃
CMOS LOGIC IC
ELM7SU04BW
Unbuffer Inverter×2
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
Symbol
Vdd
Vin
Vout
Top
High-input down-time
tr, tf
Limit
2.0~6.0
0~Vdd
0~Vdd
-40~+85
Vdd=2.0V
Vdd=4.5V
Vdd=6.0V
Unit
V
V
V
℃
0~1000
0~500
0~400
ns
■Pin configuration
SOT-26 (TOP VIEW)
Pin No.
1
2
3
4
5
6
Pin name
OUTA
GND
INB
OUTB
VDD
INA
Input
INA
INB
Low
High
■AC electrical characteristics
Parameter
Sym.
tTLH
tTHL
tPLH
tPHL
Output transition time
Propagation delay-time
Parameter
Sym.
tTLH
Output transition time
tTHL
tPLH
Propagation delay-time
tPHL
Input capacity
Equivalent inner capacity
Cin
Cpd
Vdd
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Output
OUTA
OUTB
High
Low
CL=15pF, tr=tf=6ns, Vdd=5V
Min.
Top=25℃
Typ.
Max.
5
10
5
10
5
15
5
15
Top=25℃
Min.
Typ.
50
14
12
50
14
12
48
12
9
48
12
9
5
10
Max.
125
25
21
125
25
21
100
20
17
100
20
17
10
Unit
Condition
ns
Refer to test circuit
ns
Refer to test circuit
CL=50pF, tr=tf=6ns
Top=-40~+85℃
Unit Condition
Min.
Max.
155
31
ns
26
Refer to
test circuit
155
31
ns
26
125
25
ns
21
Refer to
test circuit
125
25
ns
21
10
pF
pF
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit.
Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd・Vdd・fin+Idd
2
CMOS LOGIC IC
ELM7SU04BW
Unbuffer Inverter×2
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vdd
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
Top=25℃
Min.
Typ.
Max.
1.70
3.60
4.80
0.30
0.90
1.20
1.80
2.00
4.00
4.50
5.50
6.00
4.18
4.31
5.68
5.80
0.00
0.20
0.00
0.50
0.00
0.50
0.17
0.26
0.18
0.26
-0.1
0.1
1.0
■Test circuit
Top=-40~+85℃
Min.
Max.
1.70
3.60
4.80
0.30
0.90
1.20
1.80
4.00
5.50
4.13
5.63
0.20
0.50
0.50
0.33
0.33
-1.0
1.0
10.0
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Condition
V
V
Vin=
Vih or Vil
V
Ioh=-2mA
Ioh=-2.6mA
Iol=20μA
V
Vin=Vih
Iol=2mA
Iol=2.6mA
Vin=Vdd or GND
Vin=Vdd or GND
μA
μA
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Ioh=-20μA
■Measured wave pattern
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Unit
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* Output should be opened when measuring current consumption.
■Marking
SOT-26
No.
①
②
Mark
E
B
A~Z
(except I, O, X)
③
3
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Content
ELM7S series
ELM7SU04BW
Lot No.
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