VISHAY BF569

BF569/BF569R
Vishay Telefunken
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For selfoscillating RF mixer stages.
Features
D High gain
D Low noise
1
1
13 581
13 581
94 9280
2
9510527
3
3
BF569 Marking: LH
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
BF569R Marking: LM
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
–VCBO
–VCEO
–VEBO
–IC
Ptot
Tj
Tstg
Value
40
35
3
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85000
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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BF569/BF569R
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
DC forward current transfer ratio
Test Conditions
–VCE = 40 V, VBE = 0
–VCB = 20 V, IE = 0
–VEB = 2 V, IC = 0
–IC = 1 mA, IB = 0
–VCE = 10 V, –IC = 3 mA
Symbol
Min
–ICES
–ICBO
–IEBO
–V(BR)CEO 35
hFE
25
Typ
50
Max Unit
100 mA
100 nA
10
mA
V
90
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Transition frequency
–VCE = 10 V, –IC = 3 mA, f = 300 MHz
Collector-base capacitance –VCB = 10 V, f = 1 MHz
Noise figure
–VCE = 10 V, –IC = 3 mA, ZS = 50 W,
ZL = 500 W, f = 800 MHz
Power gain
–VCE = 10 V, –IC = 3 mA, ZS = 50 W,
ZL = 500 W, f = 800 MHz
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Symbol
fT
Ccb
F
Min
Gpb
13
Typ
1000
0.35
4.2
14.5
Max
Unit
5.0
MHz
pF
dB
dB
Document Number 85000
Rev. 3, 20-Jan-99
BF569/BF569R
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF )
P tot – Total Power Dissipation ( mW )
300
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
Tamb – Ambient Temperature ( °C )
96 12159
1.0
0.8
0.6
0.4
0.2
0
0
12875
4
8
12
16
20
–VCB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
Figure 1. Total Power Dissipation vs.
Ambient Temperature
f T – Transition Frequency ( MHz )
1200
1000
800
600
400
–VCB=10V
f=300MHz
200
0
0
12847
3
6
9
12
15
–IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85000
Rev. 3, 20-Jan-99
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BF569/BF569R
Vishay Telefunken
Dimensions of BF569 in mm
95 11346
Dimensions of BF569R in mm
95 11347
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Document Number 85000
Rev. 3, 20-Jan-99
BF569/BF569R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85000
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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