GPSEMI GPDG3115

Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: [email protected]
GPDG3115
RECTIFIER DIODE
Low profile ceramic package
VOLTAGE UP TO
2200 V
AVERAGE CURRENT
1150 A
SURGE CURRENT
BLOCKING CHARACTERISTICS
Characteristic
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
IRRM
Repetitive peak reverse current, max.
Conditions
14 kA
Value
2200 V
2300 V
VRRM, single phase, half wave, Tj = Tjmax
30 mA
FORWARD CHARACTERISTICS
IF(AV)
Average forward current
Sine wave,180° conduction, T h = 55°C
1150 A
IF(RMS)
R.M.S. forward current
Sine wave,180° conduction, Th = 55°C
1806 A
IFSM
Surge forward current
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
I²t
I² t for fusing coordination
VF(TO)
Threshold voltage
Tj = Tjmax
0.925 V
rF
Forward slope resistance
Tj = Tjmax
0.258 mΩ
VFM
Peak forward voltage, max
Forward current IF = 1200 A, Tj = Tjmax
1.235 V
14 kA
980 kA²s
SWITCHING CHARACTERISTICS
Rverse recovery charge, typ
Tj = Tjmax, IF = 2000 A, di/dt = -5 A/µs
Irr
Reverse recovery current
VR = 100 V
trr
Reverse recovery time
VFP
Forward recovery voltage
Qrr
µC
A
µs
Tj = Tjmax, di/dt =
A/µs
V
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case)
Double side cooled
0.038 °C/W
Rth(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.012 °C/W
Tjmax
Max operating junction temperature
Tstg
Storage temperature
F
Clamping force ± 10%
Mass
Document GPDG3115T001
150 °C
-40 / 150 °C
9 kN
110 g