HIRECT H45TBXX

PHASE CONTROL THYRISTOR H45TBXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
125
200-1600
V
125
200-1600
V
125
125
125
10
10
600
mA
mA
V/μS
45
A
70
A
800
A
3200
A 2S
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
dV/dT
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
V = VRRM
V = VRRM
@ 67%VDRM
CONDUCTING PARAMETERS
IF(AV)
Average on-state current
IRMS
RMS on-state current
ITSM
Surge on-state current
I2 t
I2 t
VT
Peak on-state voltage drop
V0
R0
Threshold voltage
On-state slope resistance
di/dt
Repetitive rate of rise of current
180 sine, 50H Z, TC
= 850C
Sine wave, 10mS
without reverse
voltage
125
On-state
current = 150A
125
1.72
V
125
125
0.95
4.50
V
mΩ
125
120
A/μS
25
25
25
25
150
2.50
400
300
mA
V
mA
mA
30
W
120
12
10
A/μS
V
A
Junction to case
0.60
0
C/W
Case to heatsink
0.20
0
C/W
dIG/dT = 1A/µS
VGK = 1V
TRIGGERING PARAMETERS
IGT
VGT
IL
IH
PG –PEAK
di/dt
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
VD = 5V
VD = 5V
VD = 5V
Pulse width
100μSec
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
HIND RECTIFIERS LTD
125
-40 - 125
4
45
0
C
C
NM
gms
0
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PHASE CONTROL THYRISTOR H45TBXX
All dimensions in mm
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PHASE CONTROL THYRISTOR H45TBXX
On State Power Loss
100
90
80
0
Pt(av) - W
70
120
60
180
0
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
45
50
It(av) - A
Maximum Permissible Case Temp
140
120
Tcase (0C)
100
80
60
40
0
60
20
120
0
0
180
0
0
5
10
15
20
25
30
35
40
45
50
It(av) - A
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PHASE CONTROL THYRISTOR H45TBXX
Max non repetitive Surge Current
900
800
700
I tsm- A
600
500
400
300
200
100
0
0.01
0.1
1
10
Time in Sec
Transient Thermal Impedance Junction to Case
0.7
0.6
Rth(j-c)
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
Time in Sec
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PHASE CONTROL THYRISTOR H45TBXX
On State Characteristics
240
220
200
180
I t(av) - A
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
Vt - (V)
Gate Trigger Characteristics
100
VG(V) - V
10
VG
250C
1
PO(tp)
I GT
30 W
(0.1ms
)
I GD
0.1
0.001
0.01
0.1
1
10
100
IG (av ) - A
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PHASE CONTROL THYRISTOR H45TBXX
Ordering Information: H
Hirect make Thyristor
45
IF(AV) = 45A
TB
XX
TB – with a Pigtail VRRM = XX x 100
e.g.12 * 100 =1200V
Hind Rectifiers Ltd reserves the right to change the specifications without
notice.
This datasheet specifies technical information for semiconductor devices but
promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Hind Rectifiers Ltd
Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - [email protected]
Website: - www.hirect.com
HIND RECTIFIERS LTD
June-2008
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