HITTITE HMC121_01

MICROWAVE CORPORATION
HMC121
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 15 GHz
2
Typical Applications
Features
• Base Station Infrustructure
Wide Bandwidth: DC - 15 GHz
• Portable Wireless, CATV & DBS
Low Phase Shift vs. Attenuation
• MMDS & Wireless LAN
30 dB Attenuation Range
• Wireless Local Loop
Simplified Voltage Control
ATTENUATORS - CHIP
• Military, Space, & Test Equipment
General Description
Functional Diagram
The HMC121 chip is an absorptive voltage variable
attenuator. It features an on-chip reference attenuator for use with an external op-amp to provide
simple single voltage attenuation control. The device
is ideal in designs where an analog control signal
must control RF signal levels over a 30 dB range,
such as AGC circuits and in temperature compensation of multiple gain stages. See SMT packaged versions HMC121G8 (hermetic) and HMC121C8 (non
hermetic).
Electrical Specifications, TA = +25° C, 50 ohm system
Parameter
Min.
Typ.
Max.
Units
1.8
2
2.8
3.5
dB
dB
Inser tion Loss
DC - 8 GHz:
DC - 15 GHz:
Attenuation Range
25
30
dB
13
10
18
15
dB
dB
3
6
ns
ns
Min Atten:
Atten. >2 dB:
+10
-2
dBm
dBm
Min Atten:
Atten. >2 dB:
+25
+10
dBm
dBm
Return Loss
DC - 8 GHz:
DC - 15 GHz:
Switching Characteristics
tRISE, tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
Input Power for 0.25 dB Compression (0.5 - 15 GHz)
Input Third Order Intercept (0.5 - 15 GHz)
(Two - tone Input Power = 8 dBm Each Tone)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
HMC121
v01.0801
MICROWAVE CORPORATION
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 15 GHz
Insertion Loss
Relative Attenuation
0
ATTENUATION (dB)
INSERTION LOSS (dB)
-1
-2
-3
-4
-5
2
-10
-20
-30
-40
0
2
4
6
8
10
12
14
16
0
2
4
FREQUENCY (GHz)
Return Loss
12
14
16
Relative Attenuation vs.
Control Voltage
0
CONTROL VOLTAGE
0
-10
-20
-30
-0.5
-1
V2
V1
-1.5
-2
-2.5
-3
0
2
4
6
8
10
12
14
16
0
5
FREQUENCY (GHz)
10
15
20
25
RELATIVE ATTENUATION (dB)
30
Relative Phase
90
RELATIVE PHASE (DEG)
RETURN LOSS (dB)
6
8
10
FREQUENCY (GHz)
ATTENUATORS - CHIP
0
70
20 dB
50
30
10 dB
10
1 dB and 3 dB
-10
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
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MICROWAVE CORPORATION
HMC121
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 15 GHz
Single-Line Control Driver
Absolute Maximum Ratings
ATTENUATORS - CHIP
2
50
RF Input Power
+16 dBm
Control Voltage Range
+1.0 to -6.0 Vdc
Storage Temperature
-65 to +150 deg C
Operating Temperature
-55 to +125 deg C
50
RF1
RF2
500
500
500
500
V2
I
O V1
CTL
+5V
500
1N4148
3.9K
500
3.9K
TL321
OR EQUIVALENT
-5V
External op-amp control circuit maintains impedance
match while attenuation is varied. Input control ranges
from 0 Volts (min. attenuation) to -2.5 Volts (max. attenuation).
Outline Drawing
0.87 (0.034)
0.12 (0.005)
PORT RF1
1.10
(0.043)
PORT RF2
0.67
(0.026)
Hittite
V2
V1
0.09 (0.003)
0.21 (0.008)
0.24 (0.009)
0.39 (0.015)
PORT V1
PORT O
PORT I
PORT V2
0.54 (0.021)
ALL DIMENSIONS ARE: ± 0.025 (0.001)
DIE THICKNESS IS 0.10 (0.004), BACKSIDE IS GROUND
BOND PADS ARE 0.10 (0.004) SQUARE
ALL DIMENSIONS IN MILLIMETERS (INCHES)
BOND PAD METALLIZATION: GOLD
BACKSIDE METALLIZATION: GOLD
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
MICROWAVE CORPORATION
HMC121
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 15 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
2
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers,
or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should
be 290 deg. C.
ATTENUATORS - CHIP
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports)
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
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