HT93LC86 CMOS 16K 3-Wire Serial EEPROM Features · Operating voltage: 2.2V~5.5V · Automatic erase-before-write operation · Low power consumption - Operating: 5mA max. · Word/chip erase and write operation - Standby: 10mA max. · Software controlled write protection · Write operation with built-in timer · User selectable internal organization - 16K: 2048´8 or 1024´16 · 40-year data retention · 106 rewrite cycles per word · 3-wire Serial Interface · Commercial temperature range (0°C to +70°C) · Write cycle time: 5ms max. · 8-pin DIP/SOP/TSSOP package General Description The HT93LC86 is a 16K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using a CMOS floating gate process. Its 16384 bits of memory are organised into 1024 words of 16 bits each when the ORG pin is connected to VCC or organised into 2048 words of 8 bits each when it is tied to VSS. The de- vice is especially suitable for use in many industrial and commercial applications where low power and low voltage operation are essential. The device can easily interface to microcontrollers using the versatile serial interface compose of (CS), serial clock (SK), data input (DI) and data output (DO). Block Diagram C o n tro l L o g ic a n d C lo c k G e n e ra to r C S S K O R G A d d re s s R e g is te r V C C A d d re s s D e c o d e r V S S D I D a ta R e g is te r M e m o r y C e ll A rra y 1 6 K : (2 0 4 8 ´ 8 o r 1 0 2 4 ´ 1 6 ) O u tp u t B u ffe r D O Pin Assignment C S 1 8 S K 2 7 D I D O 3 6 4 5 N C 1 8 V C C 2 7 V S S O R G V S S C S S K 3 6 D O 4 5 D I H T 9 3 L C 8 6 8 D IP -A /S O P -A /T S S O P -A Rev. 1.40 O R G V C C N C H T 9 3 L C 8 6 8 S O P -B 1 July 10, 2009 HT93LC86 Pin Description Pin Name CS I/O I Description Chip select input SK I Serial clock input DI I Serial data input DO O Serial data output VSS ¾ Negative power supply, ground ORG I Internal Organization When ORG is connected to VDD or left floating, the (´16) memory organization is selected. When ORG is connected to VSS, the (´8) memory organization is selected. The ORG pin is connected to an internal pull-high resistor. NC ¾ No connection VCC ¾ Positive power supply Absolute Maximum Ratings Supply Voltage ...........................VSS-0.3V to VSS+6.0V Storage Temperature ............................-50°C to 125°C Input Voltage.............................VSS-0.3V to VDD+0.3V Operating Temperature...............................0°C to 70°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Symbol Parameter Test Conditions VCC Conditions ¾ Min. Typ. Max. Unit VCC Operating Voltage ¾ 2.2 ¾ 5.5 V ICC1 Operating Current (TTL) 5V DO no load, SK=1MHz ¾ ¾ 5 mA ICC2 5V DO no load, SK=1MHz ¾ ¾ 5 mA Operating Current (CMOS) ¾ ¾ 5 mA ISTB Standby Current (CMOS) 5V CS=SK=DI=0V ¾ ¾ 10 mA ILI Input Leakage Current 5V VIN=VSS~VCC 0 ¾ 1 mA ILO Output Leakage Current 5V VOUT=VSS~VCC, CS=0V 0 ¾ 1 mA VIL 0 ¾ 0.8 V Input Low Voltage V 2.2V~5.5V DO no load, SK=250kHz 5V ¾ 2.2V~5.5V ¾ 0 ¾ 0.1VCC 5V ¾ 2 ¾ VCC V 2.2V~5.5V ¾ 0.9VCC ¾ VCC V ¾ ¾ 0.4 V ¾ ¾ 0.2 V 2.4 ¾ ¾ V VCC-0.2 ¾ ¾ V VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage CIN Input Capacitance ¾ VIN=0V, f=250kHz ¾ ¾ 5 pF COUT Output Capacitance ¾ VOUT=0V, f=250kHz ¾ ¾ 5 pF Rev. 1.40 5V IOL=2.1mA 2.2V~5.5V IOL=10mA 5V IOH=-400mA 2.2V~5.5V IOH=-10mA 2 July 10, 2009 HT93LC86 A.C. Characteristics Symbol VCC=5V±10% Parameter Min. Max. VCC=2.2V VCC=3V±10% Min. Max. Min. Max. Unit fSK Clock Frequency 0 2000 0 500 0 250 kHz tSKH SK High Time 250 ¾ 1000 ¾ 2000 ¾ ns tSKL SK Low Time 250 ¾ 1000 ¾ 2000 ¾ ns tCSS CS Setup Time 50 ¾ 200 ¾ 200 ¾ ns tCSH CS Hold Time 0 ¾ 0 ¾ 0 ¾ ns tCDS CS Deselect Time 250 ¾ 250 ¾ 1000 ¾ ns tDIS DI Setup Time 100 ¾ 200 ¾ 400 ¾ ns tDIH DI Hold Time 100 ¾ 200 ¾ 400 ¾ ns tPD1 DO Delay to ²1² ¾ 250 ¾ 1000 ¾ 2000 ns tPD0 DO Delay to ²0² ¾ 250 ¾ 1000 ¾ 2000 ns tSV Status Valid Time ¾ 250 ¾ 250 ¾ 250 ns tHZ DO Disable Time ¾ 100 ¾ 200 ¾ 400 ns tPR Write Cycle Time ¾ 5 ¾ 5 ¾ 5 ms A.C. Test Conditions V Input rise and fall time: 5ns (1V to 2V) C C = 1 .9 5 2 V Input and output timing reference levels: 1.5V 8 0 0 W Output load circuit: See Figure right D O 1 0 0 p F * N o te : * ln c lu d in g s c o p e a n d jig C S tC S S tC tS S K tD D I IS t D IH V a lid D a ta tP D O Rev. 1.40 K H D 0 tS K L tC D S S H V a lid D a ta tP D 1 H i- Z 3 July 10, 2009 HT93LC86 Functional Description ERASE The HT93LC86 is accessed via a three-wire serial communication interface. The device is arranged into 1024 words by 16 bits or 2048 words by 8 bits depending whether the ORG pin is connected to VCC or VSS. The HT93LC86 contains seven instructions: READ, ERASE, WRITE, EWEN, EWDS, ERAL and WRAL. When the user selectable internal organization is arranged into 1024´16 (2048´8), these instructions are all made up of 13(14) bits data: 1 start bit, 2 op code bits and 10(11) address bits. The ERASE instruction erases data at the specified addresses in the programming enable mode. After the ERASE op-code and the specified address have been issued, the data erase is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signals for the internal erase, the SK clock is not required. During the internal erase, the busy/ready status can be verified by keeping CS high. If busy, the DO pin will remain low but when the operation is over, the DO pin will return to a high level permitting further instructions to be executed. By using the control signal CS, SK and data input signal DI, these instructions can be transmitted to the HT93LC86. These serial instruction data presented at the DI input will be written into the device on the rising edge of SK. During the READ cycle, the DO pin acts as the data output and during the WRITE or ERASE cycle, the DO pin indicates the BUSY/READY status. When the DO pin is active for reading data or as a BUSY/READY indicator the CS pin must be high; otherwise the DO pin will be in a high-impedance state. For successful instruction execution, CS must be pulled low once after the instruction is sent. After power on, the device is by default in the EWDS state. An EWEN instruction must be performed before any ERASE or WRITE instruction can be executed. The following are the functional descriptions and timing diagrams of all seven instructions. WRITE The WRITE instruction writes data into the device at the specified addresses in the programming enable mode. After the WRITE op-code and the specified address and data have been issued, the data writing is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signal for the internal writing, the SK clock is not required. The auto-timing write cycle includes an automatic erase-before-write capability. It is therefore not necessary to erase data before the WRITE instruction is issued. During the internal writing, the busy/ready status can be verified by keeping CS high. If busy, the DO pin will remain low but when the operation is over, the DO pin will return to a high level permitting further instructions to be executed. READ ERAL The READ instruction will stream out data at a specified address on the DO pin. The data on DO pin changes during the low-to-high edge of SK signal. The 8 bit or 16 bit data stream is preceded by a logical ²0² dummy bit. Irrespective of the condition of the EWEN or EWDS instruction, the READ command is always valid and independent of these two instructions. After the data word has been read the internal address will be automatically incremented by 1 allowing the next consecutive data word to be read out without entering further address data. The address will wrap around with CS High until CS returns to LOW. The ERAL instruction erases the entire 1024´16 or 2048´8 memory cells to a logical ²1² state in the programming enable mode. After the erase-all instruction has been issued, the data erase feature is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signal for the erase-all operation, the SK clock is not required. During the internal erase-all operation, the busy/ready status can be verified by keeping CS high. If busy, the DO pin will remain low but when the operation is over, the DO pin will return to a high level permitting further instructions to be executed. EWEN/EWDS WRAL The EWEN/EWDS instruction will enable or disable the programming capabilities. At both the power on and power off state the device automatically enters the disable mode. Before a WRITE, ERASE, WRAL or ERAL instruction is given, the programming enable instruction EWEN must be issued, otherwise any ERASE/WRITE instructions will be invalid. After the EWEN instruction is issued, the programming enable condition remains until the power is removed off until an EWDS instruction is issued. No data can be written into the device in the programming disable state. By so doing, the internal memory data can be protected. Rev. 1.40 The WRAL instruction writes data into the entire 1024´16 or 2048´8 memory cells in the programming enable mode. After the write-all instruction set has been issued, the data writing is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signals for the write-all operation, the SK clock is not required. During the internal write-all operation, the busy/ready status can be verified by keeping CS high. If busy, the DO pin will remain low but when the operation is over, the DO pin will return to a high level permitting further instructions to be executed. 4 July 10, 2009 HT93LC86 Timing Diagrams READ tC D S C S S K (1 ) 1 S ta r t b it D I 0 A N A 0 tH H ig h - Z D O 0 D 0 D X Z H ig h D X Z * * A d d r e s s p o in te r a u to m a tic a lly c y c le s to th e n e x t w o r d M o d e (X 1 6 ) (X 8 ) A N A 9 A 1 0 D X D 1 5 D 7 EWEN/EWDS C S S ta n d b y S K D I 0 (1 ) S ta r t b it 0 1 1 = E W E N 0 0 = E W D S WRITE tC C S D S v e r ify S ta n d b y S K D I 0 (1 ) S ta r t b it A N 1 A N -1 A N -2 A 1 A 0 D X D 0 tS H ig h - Z D O tH V re a d y b u s y tP Z R ERASE tC C S D S v e r ify S ta n d b y S K D I D O Rev. 1.40 1 (1 ) S ta r t b it 1 A N A N -1 A N -2 A 1 A 0 tS H ig h - Z b u s y tP 5 tH V Z re a d y R July 10, 2009 HT93LC86 ERAL tC C S D S v e r ify S ta n d b y S K 0 (1 ) S ta r t b it D I 0 1 0 tS H ig h - Z D O tH V re a d y b u s y tP Z R WRAL tC C S D S v e r ify S ta n d b y S K 0 (1 ) S ta r t b it D I 0 0 1 D X D 0 tS H ig h - Z D O b u s y tP tH V Z re a d y R Instruction Set Summary Instruction Comments Start Bit Op Code Address ORG=0 ORG=1 X8 X16 Data ORG=0 ORG=1 X8 X16 READ Read data 1 10 A10~A0 A9~A0 D7~D0 D15~D0 ERASE Erase data 1 11 A10~A0 A9~A0 ¾ WRITE Write data 1 01 A10~A0 A9~A0 D7~D0 D15~D0 EWEN Erase/Write Enable 1 00 11XXXXXXXXX 11XXXXXXXX ¾ EWDS Erase/Write Disable 1 00 00XXXXXXXXX 00XXXXXXXX ¾ ERAL Erase All 1 00 10XXXXXXXXX 10XXXXXXXX ¾ WRAL Write All 1 00 01XXXXXXXXX 01XXXXXXXX D7~D0 D15~D0 Note: ²X² stands for don¢t care Data should be written to the EEPROM in the format (8-bit or 16-bit mode) in which it is to be read. Rev. 1.40 6 July 10, 2009 HT93LC86 Package Information 8-pin DIP (300mil) Outline Dimensions A 8 5 B 1 4 H C D I G E F Symbol Rev. 1.40 Dimensions in mil Min. Nom. Max. A 355 ¾ 375 B 240 ¾ 260 C 125 ¾ 135 D 125 ¾ 145 E 16 ¾ 20 70 F 50 ¾ G ¾ 100 ¾ H 295 ¾ 315 I ¾ ¾ 375 7 July 10, 2009 HT93LC86 8-pin SOP (150mil) Outline Dimensions 5 8 A B 4 1 C C ' G H D E a F · MS-012 Symbol Rev. 1.40 Dimensions in mil Min. Nom. Max. A 228 ¾ 244 B 150 ¾ 157 C 12 ¾ 20 C¢ 188 ¾ 197 D ¾ ¾ 69 E ¾ 50 ¾ F 4 ¾ 10 G 16 ¾ 50 H 7 ¾ 10 a 0° ¾ 8° 8 July 10, 2009 HT93LC86 8-pin TSSOP Outline Dimensions 8 5 E 1 1 4 E D A L A 2 e R 0 .1 0 A 1 B C L 1 y q (4 C O R N E R S ) Symbol Rev. 1.40 Dimensions in mm Min. Nom. Max. A 1.05 ¾ 1.20 A1 0.05 ¾ 0.15 A2 0.95 ¾ 1.05 B ¾ 0.25 ¾ C 0.11 ¾ 0.15 D 2.90 ¾ 3.10 E 6.20 ¾ 6.60 E1 4.30 ¾ 4.50 e ¾ 0.65 ¾ L 0.50 ¾ 0.70 L1 0.90 ¾ 1.10 y ¾ ¾ 0.10 q 0° ¾ 8° 9 July 10, 2009 HT93LC86 Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOP 8N, TSSOP 8L Symbol A Description Dimensions in mm Reel Outer Diameter 330.0±1.0 B Reel Inner Diameter 100.0±1.5 C Spindle Hole Diameter 13.0+0.5/-0.2 D Key Slit Width T1 Space Between Flange T2 Reel Thickness Rev. 1.40 2.0±0.5 12.8+0.3/-0.2 18.2±0.2 10 July 10, 2009 HT93LC86 Carrier Tape Dimensions P 0 D P 1 t E F W C D 1 P B 0 K 0 A 0 R e e l H o le IC p a c k a g e p in 1 a n d th e r e e l h o le s a r e lo c a te d o n th e s a m e s id e . SOP 8N Symbol Description Dimensions in mm 12.0+0.3/-0.1 W Carrier Tape Width P Cavity Pitch 8.0±0.1 E Perforation Position 1.75±0.1 F Cavity to Perforation (Width Direction) 5.5±0.1 D Perforation Diameter 1.55±0.10 D1 Cavity Hole Diameter 1.50+0.25 P0 Perforation Pitch 4.0±0.1 P1 Cavity to Perforation (Length Direction) 2.0±0.1 A0 Cavity Length 6.4±0.1 B0 Cavity Width 5.2±0.1 K0 Cavity Depth 2.1±0.1 t Carrier Tape Thickness C Cover Tape Width 0.30±0.05 9.3±0.1 TSSOP 8L Symbol Description W Carrier Tape Width P Cavity Pitch E Perforation Position Dimensions in mm 12.0+0.3/-0.1 8.0±0.1 1.75±0.10 F Cavity to Perforation (Width Direction) D Perforation Diameter 1.5+0.1/-0.0 D1 Cavity Hole Diameter 1.5+0.1/-0.0 P0 Perforation Pitch 4.0±0.1 P1 Cavity to Perforation (Length Direction) 2.0±0.1 A0 Cavity Length 7.0±0.1 B0 Cavity Width 3.6±0.1 K0 Cavity Depth t Carrier Tape Thickness C Cover Tape Width Rev. 1.40 5.5±0.5 1.6±0.1 0.300±0.013 9.3±0.1 11 July 10, 2009 HT93LC86 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shenzhen Sales Office) 5F, Unit A, Productivity Building, No.5 Gaoxin M 2nd Road, Nanshan District, Shenzhen, China 518057 Tel: 86-755-8616-9908, 86-755-8616-9308 Fax: 86-755-8616-9722 Holtek Semiconductor Inc. (Chengdu Sales Office) 709, Building 3, Champagne Plaza, No.97 Dongda Street, Chengdu, Sichuan, China 610016 Tel: 86-28-6653-6590 Fax: 86-28-6653-6591 Copyright Ó 2009 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.40 12 July 10, 2009